Limiting mechanism of inversion channel mobility in Al-implanted lateral 4H-SiC metal-oxide semiconductor field-effect transistors

Applied Physics Letters

Volumn 99, Issue 7, 2011, Pages

  Frazzetto, A ^a,b   Giannazzo, F ^a   Fiorenza, P ^a   Raineri, V ^a   Roccaforte, F ^a  

^a CNR IMM   (Italy)

^b SCUOLA SUPERIORE DI CATANIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPPED SAMPLES; CHANNEL MOBILITY; COULOMB SCATTERING; DEGRADATION MECHANISM; INTERFACIAL MORPHOLOGIES; INTERFACIAL ROUGHNESS; INVERSION CHANNELS; METAL OXIDE SEMICONDUCTOR; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; POST-IMPLANTATION; TEMPERATURE DEPENDENCE; TRAPPED CHARGE;

ALUMINUM; DEGRADATION; ION BEAMS; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

TRANSISTORS;

EID: 80052090784     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3627186     Document Type: Article

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