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Journal of Applied Physics

Volumn 106, Issue 2, 2009, Pages

Electrical behavior of AlGaN/GaN heterostuctures upon high-temperature selective oxidation

(5) Roccaforte, F a Giannazzo, F a Iucolano, F a Bongiorno, C a Raineri, V a

a CNR (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HETEROSTRUCTURES; CAPACITANCE VOLTAGE MEASUREMENTS; COMPOSITIONAL STABILITY; CURRENT FLOWS; DEPTH-RESOLVED; DOPING DEPENDENCE; ELECTRICAL BEHAVIORS; ELECTRICAL MEASUREMENT; ELECTRICAL PROPERTY; HIGH ELECTRON MOBILITY; HIGH TEMPERATURE; HIGH TEMPERATURE OXIDATION; HIGH-TEMPERATURE ANNEALING; MACROSCOPIC CURRENTS; SCANNING CAPACITANCE MICROSCOPY; SELECTIVE OXIDATION; SELECTIVE OXIDATION PROCESS; SHEET CARRIER DENSITIES; TEST PATTERN; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

CAPACITANCE; ELECTRIC POTENTIAL; ELECTRON GAS; ELECTRON MOBILITY; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; OXIDATION; TWO DIMENSIONAL ELECTRON GAS;

PHASE INTERFACES;

EID: 68249158198 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3174438 Document Type: Article

Times cited : (34)

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