Atomic layer deposition of Sc2O3 for passivating AlGaN/GaN high electron mobility transistor devices

Applied Physics Letters

Volumn 101, Issue 23, 2012, Pages

  Wang, Xinwei ^a   Saadat, Omair I ^b   Xi, Bin ^a   Lou, Xiabing ^a   Molnar, Richard J ^d   Palacios, Tomás ^b   Gordon, Roy G ^a,c  

^a HARVARD UNIVERSITY   (United States)

^b Department of Electrical Engineering and Computer Science   (United States)

^c HARVARD UNIVERSITY   (United States)

^d MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; BLOCKING LAYERS; ELECTRICAL PERFORMANCE; ENHANCEMENT-MODE; INSULATOR LAYER; METAL-INSULATOR-SEMICONDUCTORS; MOISTURE DEGRADATION; POLYCRYSTALLINE; SUBTHRESHOLD SLOPE;

EPITAXIAL FILMS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MIS DEVICES; MOISTURE; SCANDIUM;

ATOMIC LAYER DEPOSITION;

EID: 84870951745     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4770071     Document Type: Article

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