3.7 mΩ-cm2, 1500 v 4H-SiC DMOSFETs for advanced high power, high frequency applications

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2011, Pages 227-230

  Ryu, Sei Hyung ^a   Cheng, Lin ^a   Dhar, Sarit ^a   Capell, Craig ^a   Jonas, Charlotte ^a   Callanan, Robert ^a   Agarwal, Anant ^a   Palmour, John ^a   Lelis, Aivars ^a   Scozzie, Charles ^a   Geil, Bruce ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE AREA; DMOSFET; FORWARD VOLTAGE DROPS; GATE BIAS; HIGH POWER; HIGH-FREQUENCY APPLICATIONS; SPECIFIC-ON-RESISTANCE; SUBTHRESHOLD SWING;

MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY;

SILICON CARBIDE;

EID: 84864760085     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2011.5890832     Document Type: Conference Paper

References (7)

1. R. J. Callanan et al., IEEE Industrial Electronics 34th Annual Conference-IECON 2008, pp. 2885-2890, Nov. 2008
2. http://www.cree.com/press/press-detail.aspi=1295272745318
3. S. Ryu, U.S. Patent 7,074,643
4. B. A. Hull et al., Materials Science Forums Vols. 615-617 (2009), pp. 749-752
5. M. Holz, J. Hilsenbeck, R. Otremba, A. Heinrich, P. Turkes, and R. Rupp, Materials Science Forums Vols. 615-617 (2009), pp. 613-616
6. http://www.cree.com/products/power-docs2.asp
7. L. Balogh, http://focus.ti.com/lit/ml/slup169/slup169.pdf