-
1
-
-
79959988364
-
CMOS scaling for the 22nm node and beyond: Device physics and technology
-
Apr
-
K. J. Kuhn, “CMOS scaling for the 22nm node and beyond: Device physics and technology,” in Proc. Int. Symp. VLSI Technol., pp. 1–2, Apr. 2011.
-
(2011)
Proc. Int. Symp. VLSI Technol
, pp. 1-2
-
-
Kuhn, K.J.1
-
2
-
-
33646864552
-
Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits
-
Feb
-
K. Roy, S. Mukhopadhyay, and H. Mahmoodi-Meimand, “Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits,” Proc. IEEE, vol. 91, no. 2, pp. 305–327, Feb. 2003.
-
(2003)
Proc. IEEE
, vol.91
, Issue.2
, pp. 305-327
-
-
Roy, K.1
Mukhopadhyay, S.2
Mahmoodi-Meimand, H.3
-
3
-
-
33646900503
-
Device scaling limits of Si MOSFETs and their application dependencies
-
Mar
-
D. J. Frank, R. H. Dennard, E. Nowak, P. M. Solomon, Y. Taur, and H-S. P. Wong, “Device scaling limits of Si MOSFETs and their application dependencies,” Proc. IEEE, vol. 89, no. 3, pp. 259–288, Mar. 2001.
-
(2001)
Proc. IEEE
, vol.89
, Issue.3
, pp. 259-288
-
-
Frank, D.J.1
Dennard, R.H.2
Nowak, E.3
Solomon, P.M.4
Taur, Y.5
Wong, H.-S.P.6
-
4
-
-
0030387118
-
Gate oxide scaling limits and projection
-
Dec
-
C. Hu, “Gate oxide scaling limits and projection,” in Proc. Int. Electron Devices Mtg., pp. 319–322, Dec. 1996.
-
(1996)
Proc. Int. Electron Devices Mtg
, pp. 319-322
-
-
Hu, C.1
-
5
-
-
0037818411
-
MOSFET gate leakage modeling and selection guide for alternative gate dielectrics based on leakage considerations
-
Apr
-
Y. C. Yeo, T-J. King, and C. Hu, “MOSFET gate leakage modeling and selection guide for alternative gate dielectrics based on leakage considerations,” IEEE Trans. Electron Devices, vol. 50, no. 4, pp. 1027–1035, Apr. 2003.
-
(2003)
IEEE Trans. Electron Devices
, vol.50
, Issue.4
, pp. 1027-1035
-
-
Yeo, Y.C.1
King, T.-J.2
Hu, C.3
-
6
-
-
0023454470
-
Subbreakdown drain leakage current in MOSFET
-
Nov
-
J. Chen, T. Y. Chan, I. C. Chen, P. K. Ko, and C. Hu, “Subbreakdown drain leakage current in MOSFET,” IEEE Electron Device Lett., vol. 8, no. 11, pp. 515–517, Nov. 1987.
-
(1987)
IEEE Electron Device Lett
, vol.8
, Issue.11
, pp. 515-517
-
-
Chen, J.1
Chan, T.Y.2
Chen, I.C.3
Ko, P.K.4
Hu, C.5
-
7
-
-
85032596151
-
-
(2011) International Technology Roadmap for Semiconductors [online]. Available at: http://www.itrs.net
-
(2011)
-
-
-
8
-
-
13644279136
-
The end of CMOS scaling: Toward the introduction of new materials and structural changes to improve MOSFET performance
-
Jan-Feb
-
T. Skotnicki, J. A. Hutchby, T-J. King, H-S. P. Wong, and F. Boeuf, “The end of CMOS scaling: toward the introduction of new materials and structural changes to improve MOSFET performance,” IEEE Circuits Devices Mag., vol. 21, no. 1, pp. 16–26, Jan-Feb. 2005.
-
(2005)
IEEE Circuits Devices Mag
, vol.21
, Issue.1
, pp. 16-26
-
-
Skotnicki, T.1
Hutchby, J.A.2
King, T.-J.3
Wong, H.-S.P.4
Boeuf, F.5
-
9
-
-
0032284102
-
Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFETs at the 25 nm channel length generation,”
-
H-S. P. Wong, D. J. Frank, and P. M. Solomon, “Device design considerations for double-gate, ground-plane, and single-gated ultra-thin SOI MOSFET’s at the 25 nm channel length generation,” in Proc. Int. Electron Devices Mtg., pp. 407–410, Dec. 1998.
-
(1998)
Proc. Int. Electron Devices Mtg
, pp. 407-410
-
-
Wong, H.-S.P.1
Frank, D.J.2
Solomon, P.M.3
-
10
-
-
0037235127
-
Two gates are better than one [doublegate MOSFET process]
-
Jan
-
P. M. Solomon, K. W. Guarini, Y. Zhang, et al., “Two gates are better than one [doublegate MOSFET process],” IEEE Circuits Devices Mag., vol. 19, no. 1, pp. 48–62, Jan. 2003.
-
(2003)
IEEE Circuits Devices Mag
, vol.19
, Issue.1
, pp. 48-62
-
-
Solomon, P.M.1
Guarini, K.W.2
Zhang, Y.3
-
11
-
-
0027847411
-
Scaling theory for doublegate SOI MOSFETs,”
-
Dec
-
K. Suzuki, T. Tanaka, Y. Tosaka, H. Horie, and Y. Arimoto, “Scaling theory for doublegate SOI MOSFET’s,” IEEE Trans. Electron Devices, vol. 40, no. 12, pp. 2326–2329, Dec. 1993.
-
(1993)
IEEE Trans. Electron Devices
, vol.40
, Issue.12
, pp. 2326-2329
-
-
Suzuki, K.1
Tanaka, T.2
Tosaka, Y.3
Horie, H.4
Arimoto, Y.5
-
12
-
-
1842865629
-
Turning silicon on its edge [double gate CMOS/FinFET technology]
-
Jan-Feb
-
E. J. Nowak, I. Aller, T. Ludwig, et al., “Turning silicon on its edge [double gate CMOS/FinFET technology],” IEEE Circuits Devices Mag., vol. 20, no. 1, pp. 20–31, Jan-Feb. 2004.
-
(2004)
IEEE Circuits Devices Mag
, vol.20
, Issue.1
, pp. 20-31
-
-
Nowak, E.J.1
Aller, I.2
Ludwig, T.3
-
13
-
-
0026896303
-
Scaling the Si MOSFET: From bulk to SOI to bulk
-
Jul
-
R. H. Yan, A. Ourmazd, and K. F. Lee, “Scaling the Si MOSFET: From bulk to SOI to bulk,” IEEE Trans. Electron Devices, vol. 39, no. 7, pp. 1704–1710, Jul. 1992.
-
(1992)
IEEE Trans. Electron Devices
, vol.39
, Issue.7
, pp. 1704-1710
-
-
Yan, R.H.1
Ourmazd, A.2
Lee, K.F.3
-
14
-
-
0033750493
-
Ultrathin-body SOI MOSFET for deep-sub-tenth micron era
-
May
-
Y. K. Choi, K. Asano, N. Lindert, V. Subramanian, T-J. King, J. Bokor, and C. Hu, “Ultrathin-body SOI MOSFET for deep-sub-tenth micron era,” IEEE Electron Device Lett., vol. 21, no. 5, pp. 254–255, May 2000.
-
(2000)
IEEE Electron Device Lett
, vol.21
, Issue.5
, pp. 254-255
-
-
Choi, Y.K.1
Asano, K.2
Lindert, N.3
Subramanian, V.4
King, T.-J.5
Bokor, J.6
Hu, C.7
-
15
-
-
84881143769
-
Device design considerations for next generation CMOS technology: Planar FDSOI and FinFET (invited)
-
B. Doris, K. Cheng, A. Khakifirooz, Q. Liu, and M. Vinet, “Device design considerations for next generation CMOS technology: Planar FDSOI and FinFET (invited),” in Proc. Int. Symp. VLSI Technol., pp. 1–2, Apr. 2013.
-
(2013)
Proc. Int. Symp. VLSI Technol
, pp. 1-2
-
-
Doris, B.1
Cheng, K.2
Khakifirooz, A.3
Liu, Q.4
Vinet, M.5
-
16
-
-
80052669264
-
New sub-20nm transistors; why and how
-
Jun
-
C. Hu, “New sub-20nm transistors; why and how,” in Proc. Design Automation Conf., pp. 460–463, Jun. 2011.
-
(2011)
Proc. Design Automation Conf
, pp. 460-463
-
-
Hu, C.1
-
17
-
-
84954188614
-
-
Oct
-
J. Markoff. (2012, Oct.) TSMC taps ARM’s V8 on road to 16-nm FinFET [online]. Available at: http://www.eetimes.com/electronics-news/4398727/TSMC-taps-ARM-V8-in-road-to-16-nm-FinFET.
-
(2012)
-
-
Markoff, J.1
-
18
-
-
84954108412
-
-
Sept
-
D. McGrath. (2012, Sept.) Globalfoundries looks to leapfrog fab rival [online]. Available at: http://www.eetimes.com/electronics-news/4396720/Globalfoundries-to-offer-14-nmprocess-with-FinFETs-in-2014.
-
(2012)
-
-
McGrath, D.1
-
19
-
-
29044440093
-
FinFET–a self-aligned double-gate MOSFET scalable to 20 nm
-
D. Hisamoto, W-C. Lee, J. Kedzierski, et al., “FinFET–a self-aligned double-gate MOSFET scalable to 20 nm,” IEEE Trans. Electron Devices, vol. 47, no. 12, pp. 2320– 2325, Dec. 2000.
-
(2000)
IEEE Trans. Electron Devices, Vol. 47, No. 12, Pp. 2320–
, pp. 2325
-
-
Hisamoto, D.1
Lee, W.-C.2
Kedzierski, J.3
-
20
-
-
0036923438
-
FinFET scaling to 10 nm gate length
-
Dec
-
B. Yu, L. Chang, S. Ahmed, et al., “FinFET scaling to 10 nm gate length,” in Proc. Int. Electron Devices Mtg., pp. 251–254, Dec. 2002.
-
(2002)
Proc. Int. Electron Devices Mtg
, pp. 251-254
-
-
Yu, B.1
Chang, L.2
Ahmed, S.3
-
21
-
-
0035060744
-
FinFET–a quasi-planar double-gate MOSFET
-
Feb
-
S. Tang, L. Chang, N. Lindert, et al., “FinFET–a quasi-planar double-gate MOSFET,” in Proc. Int. Solid-State Circuits Conf., pp. 118–119, Feb. 2001.
-
(2001)
Proc. Int. Solid-State Circuits Conf
, pp. 118-119
-
-
Tang, S.1
Chang, L.2
Lindert, N.3
-
22
-
-
51949118252
-
FinFET performance advantage at 22nm: An AC perspective
-
M. Guillorn, J. Chang, A. Bryant, et al., “FinFET performance advantage at 22nm: An AC perspective,” in Proc. Symp. VLSI Technol., pp. 12–13, Jun. 2008.
-
(2008)
Proc. Symp. VLSI Technol., Pp. 12–13
-
-
Guillorn, M.1
Chang, J.2
Bryant, A.3
-
23
-
-
4544367603
-
5nm-gate nanowire FinFET
-
F-L. Yang, D-H. Lee, H-Y. Chen, et al., “5nm-gate nanowire FinFET,” in Proc. Int. Symp. VLSI Technology, pp. 196–197, Jun. 2004.
-
(2004)
Proc. Int. Symp. VLSI Technology
, pp. 196-197
-
-
Yang, F.-L.1
Lee, D.-H.2
Chen, H.-Y.3
-
24
-
-
0033329310
-
Sub 50-nm FinFET: PMOS
-
Dec
-
X. Huang, W-C. Lee, C. Kuo, et al., “Sub 50-nm FinFET: PMOS,” in Proc. Int. Electron Devices Mtg., pp. 67–70, Dec. 1999.
-
(1999)
Proc. Int. Electron Devices Mtg
, pp. 67-70
-
-
Huang, X.1
Lee, W.-C.2
Kuo, C.3
-
26
-
-
33751396182
-
FinFETs for nanoscale CMOS digital integrated circuits
-
Nov
-
T-J. King, “FinFETs for nanoscale CMOS digital integrated circuits,” in Proc. Int. Conf. Comput-Aided Design, pp. 207–210, Nov. 2005.
-
(2005)
Proc. Int. Conf. Comput-Aided Design
, pp. 207-210
-
-
King, T.-J.1
-
27
-
-
80052656398
-
Scaling of SOI FinFETs down to fin width of 4 nm for the 10nm technology node
-
12–13, Jun
-
J. B. Chang, M. Guillorn, P. M. Solomon, et al., “Scaling of SOI FinFETs down to fin width of 4 nm for the 10nm technology node,” in Proc. Int. Symp. VLSI Technology, Syst. Appl., pp. 12–13, Jun. 2011.
-
(2011)
Proc. Int. Symp. VLSI Technology, Syst. Appl
-
-
Chang, J.B.1
Guillorn, M.2
Solomon, P.M.3
-
28
-
-
84869446493
-
22-nm fully-depleted tri-gate CMOS transistors
-
Sept
-
C. Auth, “22-nm fully-depleted tri-gate CMOS transistors,” in Proc. Custom Integrated Circuits Conf., pp. 1–6, Sept. 2012.
-
(2012)
Proc. Custom Integrated Circuits Conf
, pp. 1-6
-
-
Auth, C.1
-
29
-
-
78650572362
-
Non-planar device architecture for 15nm node: FinFET or Tri-gate?
-
Oct
-
C-H. Lin, J. Chang, M. Guillorn, A. Bryant, P. Oldiges, and W. Haen-sch, “Non-planar device architecture for 15nm node: FinFET or Tri-gate?” in Proc. Int. SOI Conf., pp. 1–2, Oct. 2010.
-
(2010)
Proc. Int. SOI Conf., Pp. 1–2
-
-
Lin, C.-H.1
Chang, J.2
Guillorn, M.3
Bryant, A.4
Oldiges, P.5
Haen-Sch, W.6
-
30
-
-
84887054407
-
Modeling of parasitic fringing capacitance in multifin trigate FinFETs
-
May
-
K. Lee, T. An, S. Joo, K-W. Kwon, and S. Kim, “Modeling of parasitic fringing capacitance in multifin trigate FinFETs,” IEEE Trans. Electron Devices, vol. 60, no. 5, pp. 1786–1789, May 2013.
-
(2013)
IEEE Trans. Electron Devices
, vol.60
, Issue.5
, pp. 1786-1789
-
-
Lee, K.1
An, T.2
Joo, S.3
Kwon, K.-W.4
Kim, S.5
-
31
-
-
38349114770
-
Statistical leakage estimation of double gate FinFET devices considering the width quantization property
-
Feb
-
J. Gu, J. Keane, S. Sapatnekar, and C. H. Kim, “Statistical leakage estimation of double gate FinFET devices considering the width quantization property,” IEEE Trans. Very Large Scale Integration (VLSI) Systems, vol. 16, no. 2, pp. 206–209, Feb. 2008.
-
(2008)
IEEE Trans. Very Large Scale Integration (VLSI) Systems
, vol.16
, Issue.2
, pp. 206-209
-
-
Gu, J.1
Keane, J.2
Sapatnekar, S.3
Kim, C.H.4
-
32
-
-
10644265317
-
Molybdenum gate technology for ultrathin-body MOSFETs and FinFETs
-
Dec
-
D. Ha, H. Takeuchi, Y-K. Choi, and T-J. King, “Molybdenum gate technology for ultrathin-body MOSFETs and FinFETs,” IEEE Trans. Electron Devices, vol. 51, no. 12, pp. 1989–1996, Dec. 2004.
-
(2004)
IEEE Trans. Electron Devices
, vol.51
, Issue.12
, pp. 1989-1996
-
-
Ha, D.1
Takeuchi, H.2
Choi, Y.-K.3
King, T.-J.4
-
33
-
-
34748840102
-
Optimizing FinFET technology for high-speed and lowpower design
-
T. Sairam, W. Zhao, and Y. Cao, “Optimizing FinFET technology for high-speed and lowpower design,” in Proc. ACM Great Lakes Symp. on VLSI, pp. 73–77, 2007.
-
(2007)
Proc. ACM Great Lakes Symp. on VLSI
, pp. 73-77
-
-
Sairam, T.1
Zhao, W.2
Cao, Y.3
-
34
-
-
47649111580
-
Threshold voltage control through multiple supply voltages for power-efficient FinFET interconnects
-
A. Muttreja, P. Mishra, and N. K. Jha, “Threshold voltage control through multiple supply voltages for power-efficient FinFET interconnects,” in Proc. Int. Conf. VLSI Design, 2008, pp. 220–227.
-
(2008)
Proc. Int. Conf. VLSI Design
, pp. 220-227
-
-
Muttreja, A.1
Mishra, P.2
Jha, N.K.3
-
35
-
-
68549118803
-
Low-power FinFET circuit synthesis using multiple supply and threshold voltages, ACM
-
P. Mishra, A. Muttreja, and N. K. Jha, “Low-power FinFET circuit synthesis using multiple supply and threshold voltages,” ACM J. Emerging Technologies in Computing Systems, vol. 5, no. 2, Jul. 2009.
-
(2009)
J. Emerging Technologies in Computing Systems
, vol.5
, Issue.2
-
-
Mishra, P.1
Muttreja, A.2
Jha, N.K.3
-
36
-
-
77953117443
-
Low-power FinFET circuit synthesis using surface orientation optimization
-
Mar
-
P. Mishra and N. K. Jha, “Low-power FinFET circuit synthesis using surface orientation optimization,” in Proc. Design Automation & Test in Europe Conf., Mar. 2010, pp. 311–314.
-
(2010)
Proc. Design Automation & Test in Europe Conf
, pp. 311-314
-
-
Mishra, P.1
Jha, N.K.2
-
37
-
-
84859906521
-
Accurate leakage estimation for FinFET standard cells using the response surface methodology
-
Jan
-
S. Chaudhuri, P. Mishra, and N. K. Jha, “Accurate leakage estimation for FinFET standard cells using the response surface methodology,” in Proc. Int. Conf. VLSI Design, Jan. 2012, pp. 238–244.
-
(2012)
Proc. Int. Conf. VLSI Design
, pp. 238-244
-
-
Chaudhuri, S.1
Mishra, P.2
Jha, N.K.3
-
38
-
-
47649083623
-
CMOS logic design with independent-gate FinFETs
-
Oct
-
A. Muttreja, N. Agarwal, and N. K. Jha, “CMOS logic design with independent-gate FinFETs,” in Proc. Int. Conf. Computer Design, Oct. 2007, pp. 560–567.
-
(2007)
Proc. Int. Conf. Computer Design
, pp. 560-567
-
-
Muttreja, A.1
Agarwal, N.2
Jha, N.K.3
-
39
-
-
75549083819
-
Leakage-delay tradeoff in FinFET logic circuits: A comparative analysis with bulk technology
-
Feb
-
M. Agostinelli, M. Alioto, D. Esseni, and L. Selmi, “Leakage-delay tradeoff in FinFET logic circuits: A comparative analysis with bulk technology,” IEEE Trans. Very Large Scale Integration (VLSI) Systems, vol. 18, no. 2, pp. 232–245, Feb. 2010.
-
(2010)
IEEE Trans. Very Large Scale Integration (VLSI) Systems
, vol.18
, Issue.2
, pp. 232-245
-
-
Agostinelli, M.1
Alioto, M.2
Esseni, D.3
Selmi, L.4
-
40
-
-
79951917300
-
Dual-Vth independent-gate FinFETs for low power logic circuits
-
Mar
-
M. Rostami and K. Mohanram, “Dual-Vth independent-gate FinFETs for low power logic circuits,” IEEE Trans. Computer-Aided Design, vol. 30, no. 3, pp. 337–349, Mar. 2011.
-
(2011)
IEEE Trans. Computer-Aided Design
, vol.30
, Issue.3
, pp. 337-349
-
-
Rostami, M.1
Mohanram, K.2
-
41
-
-
51949118050
-
Modeling and circuit synthesis for independently controlled double gate FinFET devices
-
Nov
-
A. Datta, A. Goel, R. T. Cakici, H. Mahmoodi, D. Lekshmanan, and K. Roy, “Modeling and circuit synthesis for independently controlled double gate FinFET devices,” IEEE Trans. Computer-Aided Design, vol. 26, no. 11, pp. 1957–1966, Nov. 2007.
-
(2007)
IEEE Trans. Computer-Aided Design
, vol.26
, Issue.11
, pp. 1957-1966
-
-
Datta, A.1
Goel, A.2
Cakici, R.T.3
Mahmoodi, H.4
Lekshmanan, D.5
Roy, K.6
-
42
-
-
33947421763
-
Physical insights regarding design and performance of independent-gate FinFETs
-
Oct
-
W. Zhang, J. Fossum, L. Mathew, and Y. Du, “Physical insights regarding design and performance of independent-gate FinFETs,” IEEE Trans. Electron Devices, vol. 52, no. 10, pp. 2198–2206, Oct. 2005.
-
(2005)
IEEE Trans. Electron Devices
, vol.52
, Issue.10
, pp. 2198-2206
-
-
Zhang, W.1
Fossum, J.2
Mathew, L.3
Du, Y.4
-
43
-
-
80052655324
-
Modeling of width-quantization-induced variations in logic FinFETs for 22nm and beyond
-
Jun
-
C-H. Lin, W. Haensch, P. Oldiges, et al., “Modeling of width-quantization-induced variations in logic FinFETs for 22nm and beyond,” in Proc. Int. Symp. VLSI Technology, Syst. Appl., Jun. 2011, pp. 16–17.
-
(2011)
Proc. Int. Symp. VLSI Technology, Syst. Appl
, pp. 16-17
-
-
Lin, C.-H.1
Haensch, W.2
Oldiges, P.3
-
44
-
-
67650917099
-
A novel table-based approach for design of FinFET circuits
-
Jul
-
R. A. Thakker, C. Sathe, A. B. Sachid, M. S. Baghini, V. R. Rao, and M. B. Patil, “A novel table-based approach for design of FinFET circuits,” IEEE Trans. Computer-Aided Design, vol. 28, no. 7, pp. 1061–1070, Jul. 2009.
-
(2009)
IEEE Trans. Computer-Aided Design
, vol.28
, Issue.7
, pp. 1061-1070
-
-
Thakker, R.A.1
Sathe, C.2
Sachid, A.B.3
Baghini, M.S.4
Rao, V.R.5
Patil, M.B.6
-
45
-
-
61649111219
-
Design and evaluation of mixed 3T-4T FinFET stacks for leakage reduction
-
L. Svensson and J. Monteiro, Ed. Berlin: Springer
-
M. Agostinelli, M. Alioto, D. Esseni, and L. Selmi, “Design and evaluation of mixed 3T-4T FinFET stacks for leakage reduction,” in Integrated Circuit and System Design. Power and Timing Modeling, Optimization and Simulation, L. Svensson and J. Monteiro, Ed. Berlin: Springer, 2009, pp. 31–41.
-
(2009)
Integrated Circuit and System Design. Power and Timing Modeling, Optimization and Simulation
, pp. 31-41
-
-
Agostinelli, M.1
Alioto, M.2
Esseni, D.3
Selmi, L.4
-
46
-
-
67650224990
-
Power optimization for FinFET-based circuits using genetic algorithms
-
Sept
-
J. Ouyang and Y. Xie, “Power optimization for FinFET-based circuits using genetic algorithms,” in Proc. Int. SOC Conf., Sept. 2008, pp. 211–214.
-
(2008)
Proc. Int. SOC Conf
, pp. 211-214
-
-
Ouyang, J.1
Xie, Y.2
-
47
-
-
34249795033
-
Gate sizing: FinFETs vs. 32nm bulk MOSFETs
-
Jul
-
B. Swahn and S. Hassoun, “Gate sizing: FinFETs vs. 32nm bulk MOSFETs,” in Proc. Design Automation Conf., Jul. 2006, pp. 528–531.
-
(2006)
Proc. Design Automation Conf
, pp. 528-531
-
-
Swahn, B.1
Hassoun, S.2
-
48
-
-
84855705052
-
Fault models for logic circuits in the multigate era
-
Jan
-
A. N. Bhoj, M. O. Simsir, and N. K. Jha, “Fault models for logic circuits in the multigate era,” IEEE Trans. Nanotechnology, vol. 11, no. 1, pp. 182–193, Jan. 2012.
-
(2012)
IEEE Trans. Nanotechnology
, vol.11
, Issue.1
, pp. 182-193
-
-
Bhoj, A.N.1
Simsir, M.O.2
Jha, N.K.3
-
49
-
-
84884909572
-
Design of logic gates and flip-flops in high-performance FinFET technology
-
Nov
-
A. N. Bhoj and N. K. Jha, “Design of logic gates and flip-flops in high-performance FinFET technology,” IEEE Trans. Very Large Scale Integration (VLSI) Systems, vol. 21, no. 11, pp. 1975–1988, Nov. 2013.
-
(2013)
IEEE Trans. Very Large Scale Integration (VLSI) Systems
, vol.21
, Issue.11
, pp. 1975-1988
-
-
Bhoj, A.N.1
Jha, N.K.2
-
50
-
-
49749090835
-
Characterization of new static independent-gate-biased FinFET latches and flip-flops under process variations
-
Mar
-
S. A. Tawfik and V. Kursun, “Characterization of new static independent-gate-biased FinFET latches and flip-flops under process variations,” in Proc. Int. Symp. Qual. Electron. Design, Mar. 2008, pp. 311–316.
-
(2008)
Proc. Int. Symp. Qual. Electron. Design
, pp. 311-316
-
-
Tawfik, S.A.1
Kursun, V.2
-
51
-
-
37749005263
-
Low-power and compact sequential circuits with independent-gate FinFETs
-
Jan
-
S. A. Tawfik and V. Kursun, “Low-power and compact sequential circuits with independent-gate FinFETs,” IEEE Trans. Electron Devices, vol. 55, no. 1, pp. 60–70, Jan. 2008.
-
(2008)
IEEE Trans. Electron Devices
, vol.55
, Issue.1
, pp. 60-70
-
-
Tawfik, S.A.1
Kursun, V.2
-
52
-
-
34249875970
-
Device-optimization technique for robust and low-power FinFET SRAM design in nanoscale era
-
Jun
-
A. Bansal, S. Mukhopadhyay, and K. Roy, “Device-optimization technique for robust and low-power FinFET SRAM design in nanoscale era,” IEEE Trans. Electron Devices, vol. 54, no. 6, pp. 1409–1419, Jun. 2007.
-
(2007)
IEEE Trans. Electron Devices
, vol.54
, Issue.6
, pp. 1409-1419
-
-
Bansal, A.1
Mukhopadhyay, S.2
Roy, K.3
-
53
-
-
84856296776
-
Transport-analysis-based 3-D TCAD capacitance extraction for sub-32-nm SRAM structures
-
Feb
-
A. N. Bhoj and R. V. Joshi, “Transport-analysis-based 3-D TCAD capacitance extraction for sub-32-nm SRAM structures,” IEEE Electron Device Letters, vol. 33, no. 2, pp. 158–160, Feb. 2012.
-
(2012)
IEEE Electron Device Letters
, vol.33
, Issue.2
, pp. 158-160
-
-
Bhoj, A.N.1
Joshi, R.V.2
-
54
-
-
84871981217
-
Efficient methodologies for 3D-TCAD modeling of emerging devices and circuits
-
Jan
-
A. N. Bhoj, R. V. Joshi, and N. K. Jha, “Efficient methodologies for 3D-TCAD modeling of emerging devices and circuits,” IEEE Trans. Computer-Aided Design, vol. 32, no. 1, pp. 47–58, Jan. 2013.
-
(2013)
IEEE Trans. Computer-Aided Design
, vol.32
, Issue.1
, pp. 47-58
-
-
Bhoj, A.N.1
Joshi, R.V.2
Jha, N.K.3
-
55
-
-
84895921600
-
Parasitics-aware design of symmetric and asymmetric gateworkfunction FinFET SRAMs
-
Mar
-
A. N. Bhoj and N. K. Jha, “Parasitics-aware design of symmetric and asymmetric gateworkfunction FinFET SRAMs,” IEEE Trans. Very Large Scale Integration (VLSI) Systems, vol. 22, no. 3, pp. 548–561, Mar. 2014.
-
(2014)
IEEE Trans. Very Large Scale Integration (VLSI) Systems
, vol.22
, Issue.3
, pp. 548-561
-
-
Bhoj, A.N.1
Jha, N.K.2
-
56
-
-
80053021430
-
Independent double-gate FinFET SRAM technology
-
Jun
-
K. Endo, S. O’uchi, T. Matsukawa, Y. Liu, and M. Masahara, “Independent double-gate FinFET SRAM technology,” in Proc. Int. Nanoelectronics Conf., Jun. 2011, pp. 1–2.
-
(2011)
Proc. Int. Nanoelectronics Conf
, pp. 1-2
-
-
Endo, K.1
O’Uchi, S.2
Matsukawa, T.3
Liu, Y.4
Masahara, M.5
-
57
-
-
79151478067
-
Asymmetric drain spacer extension (ADSE) FinFETs for low-power and robust SRAMs
-
Feb
-
A. Goel, S. K. Gupta, and K. Roy, “Asymmetric drain spacer extension (ADSE) FinFETs for low-power and robust SRAMs,” IEEE Trans. Electron Devices, vol. 58, no. 2, pp. 296–308, Feb. 2011.
-
(2011)
IEEE Trans. Electron Devices
, vol.58
, Issue.2
, pp. 296-308
-
-
Goel, A.1
Gupta, S.K.2
Roy, K.3
-
58
-
-
82155175615
-
Asymmetrically doped FinFETs for low-power robust SRAMs
-
Dec
-
F. Moradi, S. K. Gupta, G. Panagopoulos, D. T. Wisland, H. Mahmoodi, and K. Roy, “Asymmetrically doped FinFETs for low-power robust SRAMs,” IEEE Trans. Electron Devices, vol. 58, no. 12, pp. 4241–4249, Dec. 2011.
-
(2011)
IEEE Trans. Electron Devices
, vol.58
, Issue.12
, pp. 4241-4249
-
-
Moradi, F.1
Gupta, S.K.2
Panagopoulos, G.3
Wisland, D.T.4
Mahmoodi, H.5
Roy, K.6
-
59
-
-
28444488991
-
FinFET-based SRAM design
-
Aug
-
Z. Guo, S. Balasubramanian, R. Zlatanovici, T-J. King, and B. Nikolic, “FinFET-based SRAM design,” in Proc. Int. Symp. Low Power Electronic Design, Aug. 2005, pp. 2–7.
-
(2005)
Proc. Int. Symp. Low Power Electronic Design
, pp. 2-7
-
-
Guo, Z.1
Balasubramanian, S.2
Zlatanovici, R.3
King, T.-J.4
Nikolic, B.5
-
60
-
-
77952958005
-
SRAM read/write margin enhancements using FinFETs
-
Jun
-
A. Carlson, Z. Guo, S. Balasubramanian, R. Zlatanovici, T-J. K. Liu, and B. Nikolic, “SRAM read/write margin enhancements using FinFETs,” IEEE Trans. Very Large Scale Integration (VLSI) Systems, vol. 18, no. 6, pp. 887–900, Jun. 2010.
-
(2010)
IEEE Trans. Very Large Scale Integration (VLSI) Systems
, vol.18
, Issue.6
, pp. 887-900
-
-
Carlson, A.1
Guo, Z.2
Balasubramanian, S.3
Zlatanovici, R.4
Liu, T.-J.K.5
Nikolic, B.6
-
61
-
-
84864772332
-
Denser and more stable SRAM using FinFETs with multiple fin heights
-
Aug
-
A. B. Sachid and C. Hu, “Denser and more stable SRAM using FinFETs with multiple fin heights,” IEEE Trans. Electron Devices, vol. 59, no. 8, pp. 2037–2041, Aug. 2012.
-
(2012)
IEEE Trans. Electron Devices
, vol.59
, Issue.8
, pp. 2037-2041
-
-
Sachid, A.B.1
Hu, C.2
-
62
-
-
51849160433
-
Independent-gate and tied-gate FinFET SRAM circuits: Design guidelines for reduced area and enhanced stability
-
Dec
-
S. A. Tawfik, Z. Liu, and V. Kursun, “Independent-gate and tied-gate FinFET SRAM circuits: Design guidelines for reduced area and enhanced stability,” in Proc. Int. Conf. Microelectronics, Dec. 2007, pp. 171–174.
-
(2007)
Proc. Int. Conf. Microelectronics
, pp. 171-174
-
-
Tawfik, S.A.1
Liu, Z.2
Kursun, V.3
-
63
-
-
84857007521
-
Hardware-assisted 3D TCAD for predictive capacitance extraction in 32nm SOI SRAMs
-
Dec
-
A. N. Bhoj, R. V. Joshi, S. Polonsky, R. Kanj, S. Saroop, Y. Tan, and N. K. Jha, “Hardware-assisted 3D TCAD for predictive capacitance extraction in 32nm SOI SRAMs,” in Proc. Int. Electron Devices Mtg., Dec. 2011, pp. 34.7.1–34.7.4.
-
(2011)
Proc. Int. Electron Devices Mtg
, vol.7
, pp. 34.7.1-34.7.4
-
-
Bhoj, A.N.1
Joshi, R.V.2
Polonsky, S.3
Kanj, R.4
Saroop, S.5
Tan, Y.6
Jha, N.K.7
-
64
-
-
77949974205
-
FinFET SRAM design
-
Jan
-
R. V. Joshi, K. Kim, and R. Kanj, “FinFET SRAM design,” in Proc. Int. Conf. VLSI Design, Jan. 2010, pp. 440–445.
-
(2010)
Proc. Int. Conf. VLSI Design
, pp. 440-445
-
-
Joshi, R.V.1
Kim, K.2
Kanj, R.3
-
65
-
-
47649089640
-
A high-performance, low leakage, and stable SRAM row-based back-gate biasing scheme in FinFET technology
-
Jan
-
R. V. Joshi, K. Kim, R. Q. Williams, E. Nowak, and C-T. Chuang, “A high-performance, low leakage, and stable SRAM row-based back-gate biasing scheme in FinFET technology,” in Proc. Int. Conf. VLSI Design, Jan. 2007, pp. 665–672.
-
(2007)
Proc. Int. Conf. VLSI Design
, pp. 665-672
-
-
Joshi, R.V.1
Kim, K.2
Williams, R.Q.3
Nowak, E.4
Chuang, C.-T.5
-
66
-
-
84884910041
-
3-D-TCAD-based parasitic capacitance extraction for emerging multigate devices and circuits
-
Nov
-
A. N. Bhoj, R. V. Joshi, and N. K. Jha, “3-D-TCAD-based parasitic capacitance extraction for emerging multigate devices and circuits,” IEEE Trans. Very Large Scale Integration (VLSI) Systems, vol. 21, no. 11, pp. 2094–2105, Nov. 2013.
-
(2013)
IEEE Trans. Very Large Scale Integration (VLSI) Systems
, vol.21
, Issue.11
, pp. 2094-2105
-
-
Bhoj, A.N.1
Joshi, R.V.2
Jha, N.K.3
-
67
-
-
80052672058
-
CACTI-FinFET: An integrated delay and power modeling framework for FinFET-based caches under process variations
-
Jun
-
C-Y. Lee and N. K. Jha, “CACTI-FinFET: An integrated delay and power modeling framework for FinFET-based caches under process variations,” in Proc. Design Automation Conf., Jun. 2011, pp. 866–871.
-
(2011)
Proc. Design Automation Conf
, pp. 866-871
-
-
Lee, C.-Y.1
Jha, N.K.2
-
68
-
-
77949550376
-
FinFET-based power simulator for interconnection networks
-
Mar
-
C-Y. Lee and N. K. Jha, “FinFET-based power simulator for interconnection networks,” ACM J. Emerging Technologies in Computing Systems, vol. 6, no. 1, pp. 2:1–2:18, Mar. 2008.
-
(2008)
ACM J. Emerging Technologies in Computing Systems
, vol.6
, Issue.1
, pp. 1-2
-
-
Lee, C.-Y.1
Jha, N.K.2
-
69
-
-
84899961856
-
FinCANON: A PVT-aware integrated delay and power modeling framework for FinFET-based caches and on-chip networks
-
May
-
C-Y. Lee and N. K. Jha, “FinCANON: A PVT-aware integrated delay and power modeling framework for FinFET-based caches and on-chip networks,” IEEE Trans. Very Large Scale Integration (VLSI) Systems, vol. 22, no. 5, May 2014.
-
(2014)
IEEE Trans. Very Large Scale Integration (VLSI) Systems
, vol.5
, pp. 22
-
-
Lee, C.-Y.1
Jha, N.K.2
-
70
-
-
84881557675
-
Variable-pipeline-stage router
-
Sept
-
C-Y. Lee and N. K. Jha, “Variable-pipeline-stage router,” IEEE Trans. Very Large Scale Integration (VLSI) Systems, vol. 21, no. 9, pp. 1669–1682, Sept. 2013.
-
(2013)
IEEE Trans. Very Large Scale Integration (VLSI) Systems
, vol.21
, Issue.9
, pp. 1669-1682
-
-
Lee, C.-Y.1
Jha, N.K.2
-
71
-
-
85027909778
-
McPAT-PVT: Delay and power modeling framework for FinFET processor architectures under PVT variations
-
A. Tang, Y. Yang, C-Y. Lee, and N. K. Jha, “McPAT-PVT: Delay and power modeling framework for FinFET processor architectures under PVT variations,” IEEE Trans. Very Large Scale Integration (VLSI) Systems, 2014.
-
(2014)
IEEE Trans. Very Large Scale Integration (VLSI) Systems
-
-
Tang, A.1
Yang, Y.2
Lee, C.-Y.3
Jha, N.K.4
-
72
-
-
84907814732
-
Ultra-low-leakage chip multiprocessor design with hybrid FinFET logic styles, ACM
-
Sept
-
X. Chen and N. K. Jha, “Ultra-low-leakage chip multiprocessor design with hybrid FinFET logic styles,” ACM J. Emerging Technologies in Computing Systems, vol. 11, no. 1, Sept. 2014.
-
(2014)
J. Emerging Technologies in Computing Systems, Vol
, vol.1
, pp. 11
-
-
Chen, X.1
Jha, N.K.2
-
73
-
-
84874840951
-
Thermal characterization of test techniques for FinFET and 3D integrated circuits, ACM
-
Feb
-
A. Tang and N. K. Jha, “Thermal characterization of test techniques for FinFET and 3D integrated circuits,” ACM J. Emerging Technologies in Computing Systems, vol. 9, no. 1, pp. 6:1–6:16, Feb. 2013.
-
(2013)
J. Emerging Technologies in Computing Systems, Vol. 9, No. 1, Pp. 6
, vol.16
, pp. 1-6
-
-
Tang, A.1
Jha, N.K.2
-
74
-
-
84885613489
-
Design space exploration of FinFET cache, ACM
-
Oct
-
A. Tang and N. K. Jha, “Design space exploration of FinFET cache,” ACM J. Emerging Technologies in Computing Systems, vol. 9, no. 3, pp. 20:1–20:16, Oct. 2013.
-
(2013)
J. Emerging Technologies in Computing Systems, Vol. 9, No. 3, Pp. 20
, vol.16
, pp. 1-20
-
-
Tang, A.1
Jha, N.K.2
-
75
-
-
84890242878
-
FinFET circuit design
-
N. K. Jha and D. Chen, Ed. New York: Springer
-
P. Mishra, A. Muttreja, and N. K. Jha, “FinFET circuit design,” in Nanoelectronic Circuit Design, N. K. Jha and D. Chen, Ed. New York: Springer, 2011, pp. 23–54.
-
(2011)
Nanoelectronic Circuit Design
, pp. 23-54
-
-
Mishra, P.1
Muttreja, A.2
Jha, N.K.3
-
76
-
-
0024918341
-
A fully depleted lean-channel transistor (DELTA)–a novel vertical ultra thin SOI MOSFET
-
Dec
-
D. Hisamoto, T. Kaga, Y. Kawamoto, and E. Takeda, “A fully depleted lean-channel transistor (DELTA)–a novel vertical ultra thin SOI MOSFET,” in Proc. Int. Electron Devices Mtg., Dec. 1989, pp. 833–836.
-
(1989)
Proc. Int. Electron Devices Mtg
, pp. 833-836
-
-
Hisamoto, D.1
Kaga, T.2
Kawamoto, Y.3
Takeda, E.4
-
77
-
-
79955561467
-
Comparative evaluation of layout density in 3T, 4T, and MT FinFET standard cells
-
May
-
M. Alioto, “Comparative evaluation of layout density in 3T, 4T, and MT FinFET standard cells,” IEEE Trans. Very Large Scale Integration (VLSI) Systems, vol. 19, no. 5, pp. 751–762, May 2011.
-
(2011)
IEEE Trans. Very Large Scale Integration (VLSI) Systems
, vol.19
, Issue.5
, pp. 751-762
-
-
Alioto, M.1
-
78
-
-
33745139143
-
Tall triple-gate devices with TiN/HfO2 gate stack
-
Jun
-
N. Collaert, M. Demand, I. Ferain, et al., “Tall triple-gate devices with TiN/HfO2 gate stack,” in Proc. Symp. VLSI Technology, Jun. 2005, pp. 108–109.
-
(2005)
Proc. Symp. VLSI Technology
, pp. 108-109
-
-
Collaert, N.1
Demand, M.2
Ferain, I.3
-
79
-
-
33244495722
-
Characteristics of the full CMOS SRAM cell using body-tied TG MOSFETs (Bulk FinFETs)
-
Mar
-
T-S. Park, H-J. Cho, J-D. Choe, et al., “Characteristics of the full CMOS SRAM cell using body-tied TG MOSFETs (bulk FinFETs),” IEEE Trans. Electron Devices, vol. 53, no. 3, pp. 481–487, Mar. 2006.
-
(2006)
IEEE Trans. Electron Devices
, vol.53
, Issue.3
, pp. 481-487
-
-
Park, T.-S.1
Cho, H.-J.2
Choe, J.-D.3
-
80
-
-
41149120680
-
A. Kaneko, et al. “Embedded bulk FinFET SRAM cell technology with planar FET peripheral circuit for hp32 nm node and beyond,”
-
H. Kawasaki, K. Okano, A. Kaneko, et al., “Embedded bulk FinFET SRAM cell technology with planar FET peripheral circuit for hp32 nm node and beyond,” in Proc. Symp. VLSI Technology, 2006, pp. 70–71.
-
(2006)
Proc. Symp. VLSI Technology
, pp. 70-71
-
-
Kawasaki, H.1
Okano, K.2
-
81
-
-
23844461114
-
Hot carrier-induced degradation in bulk FinFETs
-
Aug
-
S-Y. Kim and J. H. Lee, “Hot carrier-induced degradation in bulk FinFETs,” IEEE Electron Device Letters, vol. 26, no. 8, pp. 566–568, Aug. 2005.
-
(2005)
IEEE Electron Device Letters
, vol.26
, Issue.8
, pp. 566-568
-
-
Kim, S.-Y.1
Lee, J.H.2
-
82
-
-
84954095633
-
-
Intel increases transistor speed by building upward
-
J. Markoff. (2011, May) Intel increases transistor speed by building upward [online]. Available at: http://www.nytimes.com/2011/05/05/science/05chip.html.
-
(2011)
-
-
Markoff, J.1
-
83
-
-
21044447633
-
On the feasibility of nanoscale triple-gate CMOS transistors
-
Jun
-
J-W. Yang and J. G. Fossum, “On the feasibility of nanoscale triple-gate CMOS transistors,” IEEE Trans. Electron Devices, vol. 52, no. 6, pp. 1159–1164, Jun. 2005.
-
(2005)
IEEE Trans. Electron Devices
, vol.52
, Issue.6
, pp. 1159-1164
-
-
Yang, J.-W.1
Fossum, J.G.2
-
84
-
-
5444219526
-
CMOS circuit performance enhancement by surface orientation optimization
-
L. Chang, M. Ieong, and M. Yang, “CMOS circuit performance enhancement by surface orientation optimization,” IEEE Trans. Electron Devices, vol. 51, no. 10, pp. 1621–1627, 2004.
-
(2004)
IEEE Trans. Electron Devices
, vol.51
, Issue.10
, pp. 1621-1627
-
-
Chang, L.1
Ieong, M.2
Yang, M.3
-
85
-
-
78049288181
-
FinFET SRAM optimization with fin thickness and surface orientation
-
Nov
-
M. Kang, S. C. Song, S. H. Woo, et al., “FinFET SRAM optimization with fin thickness and surface orientation,” IEEE Trans. Electron Devices, vol. 57, no. 11, pp. 2785–2793, Nov. 2010.
-
(2010)
IEEE Trans. Electron Devices
, vol.57
, Issue.11
, pp. 2785-2793
-
-
Kang, M.1
Song, S.C.2
Woo, S.H.3
-
86
-
-
0035714369
-
High-performance symmetric-gate and CMOS-compatible Vt asymmetric-gate FinFET devices
-
Dec
-
J. Kedzierski, D. M. Fried, E. J. Nowak, et al., “High-performance symmetric-gate and CMOS-compatible Vt asymmetric-gate FinFET devices,” in Proc. Int. Electron Devices Mtg., Dec. 2001, pp. 19.5.1–19.5.4.
-
(2001)
Proc. Int. Electron Devices Mtg
, pp. 19.5.1
-
-
Kedzierski, J.1
Fried, D.M.2
Nowak, E.J.3
-
87
-
-
0142185867
-
FinFET with isolated n+ and p+ gate regions strapped with metal and polysilicon
-
L. Mathew, M. Sadd, B. E. White, et al., “FinFET with isolated n+ and p+ gate regions strapped with metal and polysilicon,” in Proc. Int. SOI Conf., Sept. 2003, pp. 109–110.
-
(2003)
Proc. Int. SOI Conf., Sept
, pp. 109-110
-
-
Mathew, L.1
Sadd, M.2
White, B.E.3
-
88
-
-
85008043130
-
Demonstration of asymmetric gate-oxide thickness four-terminal FinFETs having flexible threshold voltage and good subthreshold slope
-
Mar
-
M. Masahara, R. Surdeanu, L. Witters, et al., “Demonstration of asymmetric gate-oxide thickness four-terminal FinFETs having flexible threshold voltage and good subthreshold slope,” IEEE Electron Device Lett., vol. 28, no. 3, pp. 217–219, Mar. 2007.
-
(2007)
IEEE Electron Device Lett
, vol.28
, Issue.3
, pp. 217-219
-
-
Masahara, M.1
Surdeanu, R.2
Witters, L.3
-
89
-
-
36849030629
-
Demonstration of asymmetric gate oxide thickness 4-terminal FinFETs
-
Oct
-
M. Masahara, R. Surdeanu, L. Witters, et al., “Demonstration of asymmetric gate oxide thickness 4-terminal FinFETs,” in Proc. Int. SOI Conf., Oct. 2006, pp. 165–166.
-
(2006)
Proc. Int. SOI Conf
, pp. 165-166
-
-
Masahara, M.1
Surdeanu, R.2
Witters, L.3
-
90
-
-
46049117875
-
K. Endo, et al. “Advanced FinFET CMOS technology: TiN-gate, fin-height control and asymmetric gate insulator thickness 4T-FinFETs,”
-
Y. Liu, T. Matsukawa, K. Endo, et al., “Advanced FinFET CMOS technology: TiN-gate, fin-height control and asymmetric gate insulator thickness 4T-FinFETs,” in Proc. Int. Electron Devices Mtg., 2006, pp. 1–4.
-
(2006)
Proc. Int. Electron Devices Mtg
, pp. 1-4
-
-
Liu, Y.1
Matsukawa, T.2
-
91
-
-
0242332710
-
Sensitivity of double-gate and FinFET devices to process variations
-
Nov
-
S. Xiong and J. Bokor, “Sensitivity of double-gate and FinFET devices to process variations,” IEEE Trans. Electron Devices, vol. 50, no. 11, pp. 2255–2261, Nov. 2003.
-
(2003)
IEEE Trans. Electron Devices
, vol.50
, Issue.11
, pp. 2255-2261
-
-
Xiong, S.1
Bokor, J.2
-
92
-
-
84863045826
-
Statistical variability and reliability in nanoscale FinFETs
-
Dec
-
X. Wang, A. R. Brown, B. Cheng, and A. Asenov, “Statistical variability and reliability in nanoscale FinFETs,” in Proc. Int. Electron Devices Mtg., Dec. 2011, pp. 541–544.
-
(2011)
Proc. Int. Electron Devices Mtg
, pp. 541-544
-
-
Wang, X.1
Brown, A.R.2
Cheng, B.3
Asenov, A.4
-
93
-
-
77954213943
-
VDD scalability of FinFET SRAMs: Robustness of different design options against LER-induced variations
-
E. Baravelli, L. D. Marchi, and N. Speciale, “VDD scalability of FinFET SRAMs: Robustness of different design options against LER-induced variations,” Solid-State Electronics, vol. 54, no. 9, pp. 909–918, 2010.
-
(2010)
Solid-State Electronics
, vol.54
, Issue.9
, pp. 909-918
-
-
Baravelli, E.1
Marchi, L.D.2
Speciale, N.3
-
94
-
-
77952598728
-
Die-level leakage power analysis of FinFET circuits considering process variations
-
Mar
-
P. Mishra, A. N. Bhoj, and N. K. Jha, “Die-level leakage power analysis of FinFET circuits considering process variations,” in Proc. Int. Symp. Quality Electronic Design, Mar. 2010, pp. 347–355.
-
(2010)
Proc. Int. Symp. Quality Electronic Design
, pp. 347-355
-
-
Mishra, P.1
Bhoj, A.N.2
Jha, N.K.3
-
95
-
-
71049186856
-
Comprehensive analysis of variability sources of FinFET characteristics
-
Jun
-
T. Matsukawa, S. O’uchi, K. Endo, et al., “Comprehensive analysis of variability sources of FinFET characteristics,” in Proc. Int. Symp. VLSI Technology, Jun. 2009, pp. 118–119.
-
(2009)
Proc. Int. Symp. VLSI Technology
, pp. 118-119
-
-
Matsukawa, T.1
O’Uchi, S.2
Endo, K.3
-
96
-
-
83455195319
-
3D vs. 2D analysis of FinFET logic gates under process variations
-
Oct
-
S. Chaudhuri and N. K. Jha, “3D vs. 2D analysis of FinFET logic gates under process variations,” in Proc. Int. Conf. Comput. Design, Oct. 2011, pp. 435–436.
-
(2011)
Proc. Int. Conf. Comput. Design
, pp. 435-436
-
-
Chaudhuri, S.1
Jha, N.K.2
-
98
-
-
50249118605
-
The effect of process variation on device temperature in FinFET circuits
-
Nov
-
J-H. Choi, J. Murthy, and K. Roy, “The effect of process variation on device temperature in FinFET circuits,” in Proc. Int. Conf. Computer-Aided Design, Nov. 2007, pp. 747–751.
-
(2007)
Proc. Int. Conf. Computer-Aided Design
, pp. 747-751
-
-
Choi, J.-H.1
Murthy, J.2
Roy, K.3
-
99
-
-
85032604639
-
-
Sentaurus TCAD tool suite [online]. Available at: http://www.synopys.com.
-
-
-
-
100
-
-
33749065968
-
Validation of 30 nm process simulation using 3D TCAD for FinFET devices
-
Jul
-
M. Nawaz, W. Molzer, P. Haibach, et al., “Validation of 30 nm process simulation using 3D TCAD for FinFET devices,” Semiconductor Science & Technology, vol. 21, no. 8, pp. 1111–1120, Jul. 2006.
-
(2006)
Semiconductor Science & Technology
, vol.21
, Issue.8
, pp. 1111-1120
-
-
Nawaz, M.1
Molzer, W.2
Haibach, P.3
-
102
-
-
84891067897
-
BSIM 2014; SPICE models enable FinFET and UTB IC designs
-
N. Paydavosi, S. Venugopalan, Y. S. Chauhan, et al., “BSIM 2014; SPICE models enable FinFET and UTB IC designs,” IEEE Access, vol. 1, pp. 201–215, 2013.
-
(2013)
IEEE Access
, vol.1
, pp. 201-215
-
-
Paydavosi, N.1
Venugopalan, S.2
Chauhan, Y.S.3
-
103
-
-
80455176942
-
BSIMCG: A compact model of cylindrical/surround gate MOSFET for circuit simulations
-
Jan
-
S. Venugopalan, D. D. Lu, Y. Kawakami, P. M. Lee, A. M. Niknejad, and C. Hu, “BSIMCG: A compact model of cylindrical/surround gate MOSFET for circuit simulations,” Solid-State Electronics, Jan. 2012.
-
(2012)
Solid-State Electronics
-
-
Venugopalan, S.1
Lu, D.D.2
Kawakami, Y.3
Lee, P.M.4
Niknejad, A.M.5
Hu, C.6
-
104
-
-
1442360373
-
A process/physics-based compact model for nonclassical CMOS device and circuit design
-
Jun
-
J. G. Fossum, L. Ge, M-H. Chiang, et al., “A process/physics-based compact model for nonclassical CMOS device and circuit design,” Solid-State Electronics, vol. 48, pp. 919–926, Jun. 2004.
-
(2004)
Solid-State Electronics
, vol.48
, pp. 919-926
-
-
Fossum, J.G.1
Ge, L.2
Chiang, M.-H.3
-
105
-
-
0842331310
-
Yu, “Physical insights on design and modeling of nanoscale FinFETs,”
-
Dec
-
J. Fossum, M. Chowdhury, V. Trivedi, T-J. King, Y-K. Choi, J. An, and B. Yu, “Physical insights on design and modeling of nanoscale FinFETs,” in Proc. Int. Electron Devices Mtg., Dec. 2003, pp. 29.1.1–29.1.4.
-
(2003)
Proc. Int. Electron Devices Mtg
, pp. 29.1.1
-
-
Fossum, J.1
Chowdhury, M.2
Trivedi, V.3
King, T.-J.4
Choi, Y.-K.5
An, J.6
-
106
-
-
0031235595
-
One billion transistors, one uniprocessor, one chip
-
Sept
-
Y. N. Patt, S. J. Patel, M. Evers, D. H. Friendly, and J. Stark, “One billion transistors, one uniprocessor, one chip,” IEEE Computer, vol. 30, no. 9, pp. 51–57, Sept. 1997.
-
(1997)
IEEE Computer
, vol.30
, Issue.9
, pp. 51-57
-
-
Patt, Y.N.1
Patel, S.J.2
Evers, M.3
Friendly, D.H.4
Stark, J.5
-
107
-
-
72349098395
-
A design of a capacitorless 1T-DRAM cell using gate-induced drain leakage (GIDL) current for low-power and high-speed embedded memory
-
Dec
-
E. Yoshida and T. Tanaka, “A design of a capacitorless 1T-DRAM cell using gate-induced drain leakage (GIDL) current for low-power and high-speed embedded memory,” in Proc. Int. Electron Devices Mtg., Dec. 2003, pp. 3761–3764.
-
(2003)
Proc. Int. Electron Devices Mtg
, pp. 3761-3764
-
-
Yoshida, E.1
Tanaka, T.2
-
108
-
-
21644445282
-
Challenges of DRAM and flash scaling–potentials in advanced emerging memory devices
-
Oct
-
L. Tran, “Challenges of DRAM and flash scaling–potentials in advanced emerging memory devices,” in Proc. Int. Conf. Solid-State and Integrated Circuits Technology, vol. 1, Oct. 2004, pp. 668–672.
-
(2004)
Proc. Int. Conf. Solid-State and Integrated Circuits Technology
, vol.1
, pp. 668-672
-
-
Tran, L.1
-
109
-
-
78650644644
-
Gated-diode FinFET DRAMs: Device and circuit designconsiderations, ACM
-
Dec
-
A. N. Bhoj and N. K. Jha, “Gated-diode FinFET DRAMs: Device and circuit designconsiderations,” ACM J. Emerging Technologies in Computing Systems, vol. 6, no. 4, pp. 12:1–12:32, Dec. 2010.
-
(2010)
J. Emerging Technologies in Computing Systems
, vol.6
, Issue.4
, pp. 12:1-12:32
-
-
Bhoj, A.N.1
Jha, N.K.2
-
110
-
-
21644432584
-
Scalability study on a capacitorless 1T-DRAM: From single-gate PD-SOI to double-gate FinDRAM
-
Dec
-
T. Tanaka, E. Yoshida, and T. Miyashita, “Scalability study on a capacitorless 1T-DRAM: From single-gate PD-SOI to double-gate FinDRAM,” in Proc. Int. Electron Devices Mtg., Dec. 2004, pp. 919–922.
-
(2004)
Proc. Int. Electron Devices Mtg
, pp. 919-922
-
-
Tanaka, T.1
Yoshida, E.2
Miyashita, T.3
-
111
-
-
47249144388
-
A capacitorless 1T-DRAM on SOI based on dynamic coupling and double-gate operation
-
Jul
-
M. Bawedin, S. Cristoloveanu, and D. Flandre, “A capacitorless 1T-DRAM on SOI based on dynamic coupling and double-gate operation,” IEEE Electron Device Letters, vol. 29, no. 7, pp. 795–798, Jul. 2008.
-
(2008)
IEEE Electron Device Letters
, vol.29
, Issue.7
, pp. 795-798
-
-
Bawedin, M.1
Cristoloveanu, S.2
Flandre, D.3
-
112
-
-
26444456024
-
A study of highly scalable DG-FinDRAM
-
Sept
-
E. Yoshida, T. Miyashita, and T. Tanaka, “A study of highly scalable DG-FinDRAM,” IEEE Electron Device Letters, vol. 26, no. 9, pp. 655–657, Sept. 2005.
-
(2005)
IEEE Electron Device Letters
, vol.26
, Issue.9
, pp. 655-657
-
-
Yoshida, E.1
Miyashita, T.2
Tanaka, T.3
-
113
-
-
84875606509
-
FinPrin: Analysis and optimization of FinFET logic circuits under PVT variations
-
Jan
-
Y. Yang and N. K. Jha, “FinPrin: Analysis and optimization of FinFET logic circuits under PVT variations,” in Proc. Int. Conf. VLSI Design, Jan. 2013, pp. 350–355.
-
(2013)
Proc. Int. Conf. VLSI Design
, pp. 350-355
-
-
Yang, Y.1
Jha, N.K.2
-
114
-
-
27644526873
-
Statistical timing analysis under spatial correlations
-
Sept
-
H. Chang and S. S. Sapatnekar, “Statistical timing analysis under spatial correlations,” IEEE Trans. Computer-Aided Design, vol. 24, no. 9, pp. 1467–1482, Sept. 2005.
-
(2005)
IEEE Trans. Computer-Aided Design
, vol.24
, Issue.9
, pp. 1467-1482
-
-
Chang, H.1
Sapatnekar, S.S.2
-
115
-
-
0348040085
-
Statistical timing analysis for intra-die process variations with spatial correlations
-
Nov
-
A. Agarwal, D. Blaauw, and V. Zolotov, “Statistical timing analysis for intra-die process variations with spatial correlations,” in Proc. Int. Conf. Computer-Aided Design, Nov. 2003, pp. 900–907.
-
(2003)
Proc. Int. Conf. Computer-Aided Design
, pp. 900-907
-
-
Agarwal, A.1
Blaauw, D.2
Zolotov, V.3
-
116
-
-
34548124914
-
From finance to flip flops: A study of fast quasi-Monte Carlo methods from computational finance applied to statistical circuit analysis
-
Mar
-
A. Singhee and R. Rutenbar, “From finance to flip flops: A study of fast quasi-Monte Carlo methods from computational finance applied to statistical circuit analysis,” in Proc. Int. Symp. Quality Electronic Design, Mar. 2007, pp. 685–692.
-
(2007)
Proc. Int. Symp. Quality Electronic Design
, pp. 685-692
-
-
Singhee, A.1
Rutenbar, R.2
-
117
-
-
77958450831
-
Why quasi-Monte Carlo is better than Monte Carlo or Latin hypercube sampling for statistical circuit analysis
-
Nov
-
A. Singhee and R. A. Rutenbar, “Why quasi-Monte Carlo is better than Monte Carlo or Latin hypercube sampling for statistical circuit analysis,” IEEE Trans. Computer-Aided Design, vol. 29, no. 11, pp. 1763–1776, Nov. 2010.
-
(2010)
IEEE Trans. Computer-Aided Design
, vol.29
, Issue.11
, pp. 1763-1776
-
-
Singhee, A.1
Rutenbar, R.A.2
-
118
-
-
84963706696
-
FinFETs: From devices to architectures
-
Article ID 365689, 21 pages
-
D. Bhattacharya and N. K. Jha, “FinFETs: From devices to architectures,” Advances in Electronics, vol. 2014, Article ID 365689, 21 pages, 2014. doi:10.1155/2014/365689.
-
(2014)
Advances in Electronics
, vol.2014
-
-
Bhattacharya, D.1
Jha, N.K.2
|