Demonstration of asymmetric gate oxide thickness 4-terminal FinFETs

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2006, Pages 165-166

  Masahara, M ^a   Surdeanu, R ^b   Witters, L ^a   Doornbos, G ^b   Nguyen, V H ^b   Van Den Bosch, G ^a   Vrancken, C ^a   Devriendt, K ^a   Neuilly, F ^b   Kunnen, E ^b   Jurczak, M ^a   Biesemans, S ^a  

^a IMEC   (Belgium)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; HAFNIUM COMPOUNDS; THICK FILMS;

DRIVE GATES; GATE OXIDES;

FIELD EFFECT TRANSISTORS;

EID: 36849030629     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOI.2006.284489     Document Type: Conference Paper

References (10)