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Volumn , Issue , 2013, Pages
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Device design considerations for next generation CMOS technology: Planar FDSOI and FinFET (Invited)
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Author keywords
[No Author keywords available]
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Indexed keywords
CHANNEL DOPINGS;
CHANNEL THICKNESS;
CMOS TECHNOLOGY;
FUNDAMENTAL LIMITATIONS;
POWER SUPPLY VOLTAGE;
SCALING METHOD;
SHORT-CHANNEL EFFECT;
THIN BODY DEVICES;
CMOS INTEGRATED CIRCUITS;
DESIGN;
GATE DIELECTRICS;
MOSFET DEVICES;
INTEGRATED CIRCUITS;
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EID: 84881143769
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/VLSI-TSA.2013.6545605 Document Type: Conference Paper |
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Times cited : (9)
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References (7)
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