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Volumn , Issue , 2008, Pages 211-214

Power optimization for FinFET-based circuits using genetic algorithms

Author keywords

[No Author keywords available]

Indexed keywords

32 NM TECHNOLOGY; BULK CMOS; CIRCUIT DESIGNERS; CIRCUIT DESIGNS; DESIGN GOAL; FINFET DEVICES; GATE SIZING; LOW POWER TECHNIQUES; PERFORMANCE CONSTRAINTS; POWER CONSUMPTION; POWER OPTIMIZATION; POWER REDUCTIONS; REDUCING POWER; UNIQUE FEATURES;

EID: 67650224990     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SOCC.2008.4641513     Document Type: Conference Paper
Times cited : (24)

References (10)
  • 1
    • 1842865629 scopus 로고    scopus 로고
    • E. J. Nowak, I. Aller, T. Ludwig, K. Kim, R. V. Joshi, C. T., and R. Bernstein, K.and Puri. Turning silicon on its edge. Circuits and Devices Magazine, IEEE, 20(1):20-31, 2004. 8755-3996.
    • E. J. Nowak, I. Aller, T. Ludwig, K. Kim, R. V. Joshi, C. T., and R. Bernstein, K.and Puri. Turning silicon on its edge. Circuits and Devices Magazine, IEEE, 20(1):20-31, 2004. 8755-3996.
  • 2
    • 33750600861 scopus 로고    scopus 로고
    • W. Zhao and Y. Cao. New generation of predictive technology model for sub-45 nm early design exploration. IEEE Trans. Electronic Devices, 53(11):2816-2823, 2006. 0018-9383.
    • W. Zhao and Y. Cao. New generation of predictive technology model for sub-45 nm early design exploration. IEEE Trans. Electronic Devices, 53(11):2816-2823, 2006. 0018-9383.
  • 4
    • 34748840102 scopus 로고    scopus 로고
    • Optimizing FinFET technology for high-speed and low-power design
    • New York, NY, USA, ACM
    • T. Sairam, W. Zhao, and Y. Cao. Optimizing FinFET technology for high-speed and low-power design. In Proc. Great Lakes Symp. VLSI, pages 73-77, New York, NY, USA, 2007. ACM.
    • (2007) Proc. Great Lakes Symp. VLSI , pp. 73-77
    • Sairam, T.1    Zhao, W.2    Cao, Y.3
  • 7
    • 51949118050 scopus 로고    scopus 로고
    • A. Datta, A. Goel, R. T. Cakici, H. Mahmoodi, D. Lekshmanan, and K. Roy. Modeling and circuit synthesis for independently controlled double gate FinFET devices. Computer-Aided Design of Integrated Circuits and Systems, IEEE Trans., 26(11):1957-1966, 2007. 0278-0070.
    • A. Datta, A. Goel, R. T. Cakici, H. Mahmoodi, D. Lekshmanan, and K. Roy. Modeling and circuit synthesis for independently controlled double gate FinFET devices. Computer-Aided Design of Integrated Circuits and Systems, IEEE Trans., 26(11):1957-1966, 2007. 0278-0070.
  • 8
    • 34249795033 scopus 로고    scopus 로고
    • Gate sizing: FinFETs vs 32nm bulk MOSFETs
    • B. Swahn and H. Soha. Gate sizing: FinFETs vs 32nm bulk MOSFETs. In Proc. Design Automation Conf., pages 528-531, 2006.
    • (2006) Proc. Design Automation Conf , pp. 528-531
    • Swahn, B.1    Soha, H.2
  • 10
    • 85184821283 scopus 로고    scopus 로고
    • W. Hung, Y. Xie, N. Vijaykrishnan, M. Kandemir, M.J. Irwin, and Y. Tsai. Total power optimization through simultaneously multiple-Vdd multiple-Vth assignment and device sizing with stack forcing. In Proc. Intl. Symp. Low Power Electronics and Design, pages 144-149, 2004.
    • W. Hung, Y. Xie, N. Vijaykrishnan, M. Kandemir, M.J. Irwin, and Y. Tsai. Total power optimization through simultaneously multiple-Vdd multiple-Vth assignment and device sizing with stack forcing. In Proc. Intl. Symp. Low Power Electronics and Design, pages 144-149, 2004.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.