Advanced FinFET CMOS technology: TiN-Gate, fin-height control and asymmetric gate insulator thickness 4T-FinFETs

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Liu, Yongxun ^a   Matsukawa, Takashi ^a   Endo, Kazuhiko ^a   Masahara, Meishoku ^a   Ishii, Kenichi ^a   O'Uchi, Shin Ichi ^a   Yamauchi, Hiromi ^a   Tsukada, Junichi ^a   Ishikawa, Yuki ^a   Suzuki, Eiichi ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; FINS (HEAT EXCHANGE); METALS; OPTICAL DESIGN; TECHNOLOGY; TECHNOLOGY TRANSFER; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

CMOS CIRCUITS; CMOS INVERTERS; CMOS TECHNOLOGIES; FABRICATION PROCESSES; FINFETS; FLEXIBLE THRESHOLD VOLTAGE; GATE INSULATORS; HEIGHT CONTROL; SUB THRESHOLDS; TIN METAL GATE;

FIELD EFFECT TRANSISTORS;

EID: 46049117875     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346953     Document Type: Conference Paper

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