Turning silicon on its edge

IEEE Circuits and Devices Magazine

Volumn 20, Issue 1, 2004, Pages 20-31

  Nowak, Edward J ^a   Aller, Ingo ^b   Ludwig, Thomas ^b   Kim, Keunwoo ^c   Joshi, Rajiv V ^c   Chuang, Ching Te ^c   Bernstein, Kerry ^c   Puri, Ruchir ^c  

^a IBM MICROELECTRONICS   (United States)

^b IBM   (Germany)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; ELECTRIC POWER SUPPLIES TO APPARATUS; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

DOUBLE GATE FIELD EFFECT TRANSISTOR; DRAIN-INDUCED BARRIER LOWERING; GATE-DIELECTRIC LEAKAGE; SHORT CHANNEL EFFECTS; SUBTHRESHOLD LEAKAGE;

SEMICONDUCTING SILICON;

EID: 1842865629     PISSN: 87553996     EISSN: None     Source Type: Journal    
DOI: 10.1109/MCD.2004.1263404     Document Type: Article

References (24)

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