Challenges of DRAM and flash scaling -Potentials in advanced emerging memory devices

International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT

Volumn 1, Issue , 2004, Pages 668-672

  Tran, Luan C ^a  

^a MICRON TECHNOLOGY INC   (United States)

Author keywords

DRAM; Flash; High k dielectrics; Nanocrystal; Nonvolatile memory (NVM)

Indexed keywords

DEPOSITION; DIELECTRIC MATERIALS; DYNAMIC RANDOM ACCESS STORAGE; ELECTRIC FIELDS; FLASH MEMORY; NANOSTRUCTURED MATERIALS; PERMITTIVITY; SCANNING ELECTRON MICROSCOPY;

HIGH-K-DIELECTRICS; NONVOLATILE MEMORY (NVM); PHASE CHANGE MEMORY; RETENTION TIME;

DATA STORAGE EQUIPMENT;

EID: 21644445282     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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