Sensitivity of Double-Gate and FinFET Devices to Process Variations

IEEE Transactions on Electron Devices

Volumn 50, Issue 11, 2003, Pages 2255-2261

  Xiong, Shiying ^a   Bokor, Jeffrey ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Double gate; FinFET; Monte Carlo simulation; Process variations; Quantum effect; Sensitivity

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC MATERIALS; MONTE CARLO METHODS; QUANTUM THEORY;

PROCESS VARIATIONS;

GATES (TRANSISTOR);

EID: 0242332710     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.818594     Document Type: Article

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