Demonstration of Asymmetric Gate-Oxide Thickness Four-Terminal FinFETs Having Flexible Threshold Voltage and Good Subthreshold Slope

IEEE Electron Device Letters

Volumn 28, Issue 3, 2007, Pages 217-219

  Masahara, Meishoku ^a   Surdeanu, Radu ^b   Doornbos, Gerben ^b   Nguyen, Viet H ^b   Witters, Liesbeth ^a   Van den bosch, Geert ^a   Vrancken, Christa ^a   Devriendt, Katia ^a   Kunnen, Eddy ^a   Jurczak, Malgorzata ^a   Biesemans, B ^a  

^a IMEC   (Belgium)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Asymmetric gate oxide thickness; FinFET; four terminal (4T) FinFET; ion bombardment enhanced etching (IBEE); subthreshold slope; threshold voltage control

Indexed keywords

EID: 85008043130     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/LED.2007.891303     Document Type: Article

References (9)

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