The effect of process variation on device temperature in FinFET circuits

IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD

Volumn , Issue , 2007, Pages 747-751

  Choi, Jung Hwan ^a   Murthy, Jayathi ^a   Roy, Kaushik ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BODY THICKNESS; CHANNEL LENGTHS; COMPUTER-AIDED DESIGN; DEVICE TEMPERATURE; INCREASED TEMPERATURES; INTERNATIONAL CONFERENCES; LEAKAGE POWER; MANUFACTURING YIELD; MONTE CARLO SIMULATION; PROCESS FLUCTUATIONS; PROCESS VARIATIONS; TECHNOLOGY SCALING; TEMPERATURE VARIATIONS; THERMAL RUNAWAY;

DESIGN; FIELD EFFECT TRANSISTORS; MONTE CARLO METHODS; MOSFET DEVICES; TECHNOLOGY; TEMPERATURE; WALLS (STRUCTURAL PARTITIONS);

CMOS INTEGRATED CIRCUITS;

EID: 50249118605     PISSN: 10923152     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICCAD.2007.4397355     Document Type: Conference Paper

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