Hot carrier-induced degradation in bulk FinFETs

IEEE Electron Device Letters

Volumn 26, Issue 8, 2005, Pages 566-568

  Kim, Sang Yun ^a   Lee, Jong Ho ^a  

^a Kyungpook National University   (South Korea)

Author keywords

Bulk FinFET; Degradation; Hot carrier effects

Indexed keywords

CRYSTAL ORIENTATION; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HOT CARRIERS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON NITRIDE; TRANSCONDUCTANCE;

BULK FINFET; HOT CARRIER EFFECTS;

FIELD EFFECT TRANSISTORS;

EID: 23844461114     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.852534     Document Type: Article

References (8)

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