Asymmetrically doped FinFETs for low-power robust SRAMs

IEEE Transactions on Electron Devices

Volumn 58, Issue 12, 2011, Pages 4241-4249

  Moradi, Farshad ^a   Gupta, Sumeet Kumar ^b   Panagopoulos, Georgios ^b   Wisland, Dag T ^c,d   Mahmoodi, Hamid ^e   Roy, Kaushik ^b  

^a AARHUS UNIVERSITY   (Denmark)

^b PURDUE UNIVERSITY   (United States)

^c Novelda AS   (Norway)

^d UNIVERSITY OF OSLO   (Norway)

^e SAN FRANCISCO STATE UNIVERSITY   (United States)

Author keywords

Asymmetric doping; FinFET; SRAM

Indexed keywords

6T-SRAM; ACCESS TIME; AREA PENALTY; ASYMMETRIC DOPING; CELL LEAKAGE; DEVICE CHARACTERISTICS; DEVICE STRUCTURES; DRAIN BIAS; FINFET; FINFETS; LOW POWER; SOURCE AND DRAINS; STATIC NOISE MARGIN; WRITE MARGIN;

ELECTRIC FIELDS; STATIC RANDOM ACCESS STORAGE; TERMINALS (ELECTRIC);

INTEGRATED CIRCUITS;

EID: 82155175615     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2169678     Document Type: Article

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