Denser and more stable SRAM using FinFETs with multiple fin heights

IEEE Transactions on Electron Devices

Volumn 59, Issue 8, 2012, Pages 2037-2041

  Sachid, Angada B ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Cell leakage; FinFET; noise margin; static random access memory (SRAM)

Indexed keywords

CELL LEAKAGE; CELL LEAKAGE CURRENTS; CHANNEL DOPINGS; FIN HEIGHT; FINFET; FINFETS; NOISE MARGINS; READ STABILITY; SRAM CELL; STATIC NOISE MARGIN; STATIC RANDOM ACCESS MEMORY;

CELLS; CYTOLOGY; FINS (HEAT EXCHANGE);

INTEGRATED CIRCUITS;

EID: 84864772332     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2199759     Document Type: Article

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