Validation of 30 nm process simulation using 3D TCAD for FinFET devices

Semiconductor Science and Technology

Volumn 21, Issue 8, 2006, Pages 1111-1120

  Nawaz, Muhammad ^a   Molzer, Wolfgang ^a   Haibach, Patrick ^a   Landgraf, Erhard ^a   Roesner, Wolfgang ^a   Staedele, Martin ^a   Luyken, Hannes ^a   Gencer, Alp ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b Synopsys GmbH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; DIFFUSION; MATHEMATICAL MODELS; MEASUREMENT THEORY; OXIDATION;

DIFFUSION MODELS; PROCESS SIMULATION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33749065968     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/8/023     Document Type: Article

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