Independent double-gate FinFET SRAM technology

Proceedings - International NanoElectronics Conference, INEC

Volumn , Issue , 2011, Pages

  Endo, Kazuhiko ^a   O'Uchi, Shi Ichi ^a   Matsukawa, Takashi ^a   Liu, Yongxun ^a   Masahara, Meishoku ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Double gate; FinFET; SRAM

Indexed keywords

DOUBLE-GATE; FINFET; FUNCTION VARIATION; METAL-GATE; NOISE MARGINS; SRAM CELL;

NANOELECTRONICS; STATIC RANDOM ACCESS STORAGE; TITANIUM NITRIDE;

INTEGRATED CIRCUITS;

EID: 80053021430     PISSN: 21593523     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/INEC.2011.5991796     Document Type: Conference Paper

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