Embedded bulk FinFET SRAM cell technology with planar FET peripheral circuit for hp32 nm node and beyond

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2006, Pages 70-71

  Kawasaki, H ^b   Okano, K ^b   Kaneko, A ^a   Yagishita, A ^a   Izumida, T ^b   Kanemura, T ^b   Kasai, K ^b   Ishida, T ^b   Sasaki, T ^b   Takeyama, Y ^b   Aoki, N ^b   Ohtsuka, N ^b   Suguro, K ^a   Eguchi, K ^a   Tsunashima, Y ^a   Inaba, S ^b   Ishimaru, K ^b   Ishiuchi, H ^b  

^a Process and Manufacturing Engineering Center   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EMBEDDED SYSTEMS; GATE DIELECTRICS; INTEGRATION; STATIC RANDOM ACCESS STORAGE; SUBSTRATES;

PERIPHERAL CIRCUITS; STATIC NOISE MARGIN (SNM);

FIELD EFFECT TRANSISTORS;

EID: 41149120680     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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