High-efficiency silicon solar cells - Materials and devices physics

Critical Reviews in Solid State and Materials Sciences

Volumn 39, Issue 4, 2014, Pages 277-317

  Xiao, Shaoqing ^a,b   Xu, Shuyan ^b  

^a JIANGNAN UNIVERSITY   (China)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

amorphous silicon; chemical passivation; emitter wrap through (EWT); field effect passivation; heterojunction with intrinsic thin layer (HIT); high efficiency Si solar cells; interdigitated back contact (IBC); Metallizationwrap through (MWT); monocrystalline Si; multicrystalline Si; PANDA; passivated emitter and rear cell (PERC); passivated emitter and rear locally diffused (PERL); passivated emitter and rear totally diffused (PERT); Pluto; silicon nitride, aluminum oxide; silicon oxide; surface passivation

Indexed keywords

ALUMINUM; AMORPHOUS SILICON; COMPETITION; CONDUCTIVE MATERIALS; EFFICIENCY; FUNCTIONAL MATERIALS; HETEROJUNCTIONS; INDUSTRY; PASSIVATION; RESEARCH; SILICON NITRIDE; SILICON OXIDES; SILICON SOLAR CELLS;

ALUMINUM OXIDES; CHEMICAL PASSIVATION; EMITTER-WRAP-THROUGH; FIELD-EFFECT; HETEROJUNCTION WITH INTRINSIC THIN LAYERS; INTERDIGITATED BACK-CONTACT (IBC); METALLIZATIONWRAP-THROUGH (MWT); MONOCRYSTALLINE; MULTICRYSTALLINE SI; PANDA; PASSIVATED EMITTER AND REAR CELL (PERC); PASSIVATED EMITTER AND REAR LOCALLY-DIFFUSED (PERL); PASSIVATED EMITTER AND REAR TOTALLY-DIFFUSED (PERT); PLUTO; SI SOLAR CELLS; SURFACE PASSIVATION;

SILICON;

EID: 84899063320     PISSN: 10408436     EISSN: 15476561     Source Type: Journal    
DOI: 10.1080/10408436.2013.834245     Document Type: Article

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