High-quality multi-crystalline silicon growth for solar cells by grain-controlled directional solidification

Progress in Photovoltaics: Research and Applications

Volumn 18, Issue 4, 2010, Pages 265-271

  Yeh, K M ^a   Hseih, C K ^b   Hsu, W C ^b   Lan, C W ^a,c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b Sino American Silicon Productions Inc   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Directional solidification; Grain growth; Semiconducting materials; Semiconducting silicon; Solar cells

Indexed keywords

ACTIVE COOLING; DENDRITE GROWTH; DIRECTIONAL SOLIDIFICATION; DISLOCATION DENSITIES; GRAIN SIZE; GROWTH DIRECTIONS; HIGH QUALITY; LASER BEAM INDUCED CURRENT; MINORITY CARRIER LIFETIMES; MULTI-CRYSTALLINE SILICON; SEMICONDUCTING MATERIALS; SOLIDIFICATION FRONTS;

CARRIER LIFETIME; CRYSTALLINE MATERIALS; CRYSTALLIZATION; GRAIN SIZE AND SHAPE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SOLAR CELLS; SOLIDIFICATION;

GRAIN GROWTH;

EID: 77952776065     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.964     Document Type: Article

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