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Volumn 18, Issue 7, 2010, Pages 505-510

Add-on laser tailored selective emitter solar cells

Author keywords

Laser doping; Laser tailoring; Screen printing; Selective emitter; Solar cell

Indexed keywords

AUGER RECOMBINATION; CONTACT FORMATION; DOPING PROFILES; ERROR-FUNCTION; GAUSSIANS; IRRADIATED SAMPLES; LASER DOPING; METALLIZATIONS; P-N JUNCTION; PROCESS WINDOW; SCREEN-PRINTED; SELECTIVE EMITTERS;

EID: 79954549804     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1007     Document Type: Article
Times cited : (85)

References (24)
  • 1
    • 33845421788 scopus 로고    scopus 로고
    • General parameterization of Auger recombination in crystalline silicon
    • DOI 10.1063/1.1432476
    • Kerr MJ, Cuevas A. General parameterization of Auger recombination in crystalline silicon. Applied Physic Letters 2002; 91: 2473-2480. 10.1063/1.1432476. (Pubitemid 34167776)
    • (2002) Journal of Applied Physics , vol.91 , Issue.4 , pp. 2473
    • Kerr, M.J.1    Cuevas, A.2
  • 2
    • 0035307668 scopus 로고    scopus 로고
    • Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide
    • 10.1063/1.1350633
    • Kerr MJ, Schmidt J, Cuevas A, Bultman JH. Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide. Journal of Applied Physics 2001; 89: 3821-3826. 10.1063/1.1350633.
    • (2001) Journal of Applied Physics , vol.89 , pp. 3821-3826
    • Kerr, M.J.1    Schmidt, J.2    Cuevas, A.3    Bultman, J.H.4
  • 3
    • 0033364929 scopus 로고    scopus 로고
    • 24.5% efficiency silicon PERT cells on MCZ substrates and 24.7% efficiency PERL cells on FZ substrates
    • Zhao J, Wang A, Green MA. 24.5% efficiency silicon PERT cells on MCZ substrates and 24.7% effciency PERL cells on FZ substrates. Progress in Photovoltoltaics: Research and Applications 1999; 7: 471-474. 10.1002/(SICI)1099-159X(199911/12)7:63.0.CO;2-7. (Pubitemid 30527301)
    • (1999) Progress in Photovoltaics: Research and Applications , vol.7 , Issue.6 , pp. 471-474
    • Zhao, J.1    Wang, A.2    Green, M.A.3
  • 5
    • 0000948654 scopus 로고
    • Simple integral screenprinting process for selective emitter polycrystalline silicon solar cells
    • 10.1063/1.106291
    • Szlufcik J, Elgamel HE, Ghannam M, Nijs J, Mertens R. Simple integral screenprinting process for selective emitter polycrystalline silicon solar cells. Applied Physics Letter 1991; 59: 1583-1584. 10.1063/1.106291.
    • (1991) Applied Physics Letter , vol.59 , pp. 1583-1584
    • Szlufcik, J.1    Elgamel, H.E.2    Ghannam, M.3    Nijs, J.4    Mertens, R.5
  • 8
    • 77951539758 scopus 로고    scopus 로고
    • Mass production of the innovative PLUTO solar cell technology
    • Philadelphia, USA, edited by: (IEEE, New York, USA
    • Shi Z, Wenham S, Ji J. Mass production of the innovative PLUTO solar cell technology. Proceedings of the 34th IEEE photovoltaic specialists conference, Philadelphia, USA, edited by: (IEEE, New York, USA, 2009), 1922.
    • (2009) Proceedings of the 34th IEEE Photovoltaic Specialists Conference , vol.1922
    • Shi, Z.1    Wenham, S.2    Ji, J.3
  • 9
    • 17044415915 scopus 로고
    • Formation and composition of surface layers and solubility limits of phosphorus during diffusion in silicon
    • Kooi E. Formation and composition of surface layers and solubility limits of phosphorus during diffusion in silicon. Journal of the Electrochemical Society 1964; 111: 1383-1387.
    • (1964) Journal of the Electrochemical Society , vol.111 , pp. 1383-1387
    • Kooi, E.1
  • 12
    • 0000015545 scopus 로고
    • Diffusion coefficients of impurities in silicon melt
    • Kodera H. Diffusion coefficients of impurities in silicon melt. Japanese Journal of Applied Physics 1964; 2: 212-219.
    • (1964) Japanese Journal of Applied Physics , vol.2 , pp. 212-219
    • Kodera, H.1
  • 14
    • 0025516861 scopus 로고
    • Statistical modelling of transmission line model test structures
    • 10.1109/16.62287
    • Gutai L. Statistical modelling of transmission line model test structures. IEEE Transactions on Electronic Devices 1990; 37: 2350-2380. 10.1109/16.62287.
    • (1990) IEEE Transactions on Electronic Devices , vol.37 , pp. 2350-2380
    • Gutai, L.1
  • 15
    • 0000987816 scopus 로고    scopus 로고
    • A quasi-steady-state opencircuit voltage method for solar cell characterization
    • edited by: H. Scheer, B. McNelis, W. Palz, H. A. Ossenbrink, and P. Helm (James & James, London, UK
    • Sinton RA, Cuevas A. A quasi-steady-state opencircuit voltage method for solar cell characterization. Proceedings of the 16th European photovoltaic solar energy conference, edited by: H. Scheer, B. McNelis, W. Palz, H. A. Ossenbrink, and P. Helm (James & James, London, UK, 2000), 1152.
    • (2000) Proceedings of the 16th European Photovoltaic Solar Energy Conference , vol.1152
    • Sinton, R.A.1    Cuevas, A.2
  • 17
    • 0014735482 scopus 로고
    • Electron tunneling and contact resistance of metal-silicon contact barriers
    • 10.1016/0038-1101(70) 90056-0
    • Yu AYC. Electron tunneling and contact resistance of metal-silicon contact barriers. Solid State Electronics 1970; 13: 239-247. 10.1016/0038-1101(70) 90056-0.
    • (1970) Solid State Electronics , vol.13 , pp. 239-247
    • Yu, A.Y.C.1
  • 18
    • 0029256236 scopus 로고
    • Correlation between barrier height and interface structure of Ag/Si(111) schottky diodes
    • 10.1016/0039-6028(94) 00791-8
    • Schmitsdorf RF, Kampen TU, Mönch W. Correlation between barrier height and interface structure of Ag/Si(111) Schottky diodes. Surface Science 1995; 324: 249-256. 10.1016/0039-6028(94) 00791-8.
    • (1995) Surface Science , vol.324 , pp. 249-256
    • Schmitsdorf, R.F.1    Kampen, T.U.2    Mönch, W.3
  • 19
    • 67349142049 scopus 로고    scopus 로고
    • Mechanism for the formation of Ag crystallites in the Ag thick-film contacts of crystalline Si solar cells
    • 10.1016/j.solmat.2008. 10.021
    • Hong K, Cho S, You J, Jeong J, Bea S, Huh J. Mechanism for the formation of Ag crystallites in the Ag thick-film contacts of crystalline Si solar cells. Solar Energy Materials & Solar Cells 2009; 93: 898-904. 10.1016/j.solmat. 2008.10.021.
    • (2009) Solar Energy Materials & Solar Cells , vol.93 , pp. 898-904
    • Hong, K.1    Cho, S.2    You, J.3    Jeong, J.4    Bea, S.5    Huh, J.6
  • 20
    • 0037464196 scopus 로고    scopus 로고
    • Silver thick-film contacts on highly doped n-type silicon emitters: Structural and electronic properties of the interface
    • 10.1063/1.1562338
    • Ballif C, Huljic DM, Willeke G, Hessler-Wyser A. Silver thick-film contacts on highly doped n-type silicon emitters: structural and electronic properties of the interface. Applied Physics Letters 2003; 82: 1878-1880. 10.1063/1.1562338.
    • (2003) Applied Physics Letters , vol.82 , pp. 1878-1880
    • Ballif, C.1    Huljic, D.M.2    Willeke, G.3    Hessler-Wyser, A.4
  • 22
    • 27644512815 scopus 로고    scopus 로고
    • Understanding the formation and temperature dependence of thick-film Ag contacts on high-sheet-resistance Si emitters for solar cells
    • DOI 10.1149/1.2001507
    • Hilali MM, Al-Jassim MM, To B, Moutinho H, Rohatgi A, Asher S. Understanding the formation and temperature dependence of thick-film Ag contacts on high-sheet-resistance Siemitters for solar cells. Journal of the Electrochemical Society 2005; 152: G742-G749. 10.1149/1.2001507. (Pubitemid 41549502)
    • (2005) Journal of the Electrochemical Society , vol.152 , Issue.10
    • Hilali, M.M.1    Al-Jassim, M.M.2    To, B.3    Moutinho, H.4    Rohatgi, A.5    Asher, S.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.