HIT cells - high-efficiency crystalline Si cells with novel structure

Progress in Photovoltaics: Research and Applications

Volumn 8, Issue 5, 2000, Pages 503-513

  Taguchi, Mikio ^a   Kawamoto, Kunihiro ^a   Tsuge, Sadaji ^a   Baba, Toshiaki ^a   Sakata, Hitoshi ^a   Morizane, Masashi ^a   Uchihashi, Kenji ^a   Nakamura, Noboru ^a   Kiyama, Seiichi ^a   Oota, Osamu ^a  

^a SANYO ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRON TUNNELING; HETEROJUNCTIONS; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

HIGH OPEN CIRCUIT VOLTAGE; SURFACE PASSIVATION;

SILICON SOLAR CELLS;

EID: 0342420736     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/1099-159X(200009/10)8:5<503::AID-PIP347>3.0.CO;2-G     Document Type: Article

References (19)

1. Green MA. High Efficiency Silicon Solar Cells, Trans Tech Publications: Aedermannsdorf, 1987; 139-164.
2. Green MA, Blakers AW. Characterization of high-efficiency silicon solar cells. J. Appl. Phys. 1985; 58; 4402-4408.
3. Swanson RM. Point contact solar cells: theory and modeling. Conference Record, the 18th IEEE PVSC, Las Vegas, 1985; 604-610.
4. Wang A, Zhao J, Green MA. 24% efficient silicon solar cells. Appl. Phys. Lett. 1990; 57: 602-604.
5. Zhao J, Wang A, Green MA. High efficiency silicon solar cells on FZ, MCZ and CZ substrates. Technical Digest of the International PVSEC-11, Hokkaido, 1999; 557-558.
6. Basore PA, Gee JM, Buck ME, Schubert WK, Ruby DS. Simplified high-efficiency silicon cell processing. Technical Digest of the International PVSEC-7, Nagoya, 1993; 61-64.
7. Hartiti B, Sivoththaman S, Schindler R, Nijs J, Muller JC, Siffert P. Low temperature formation of emitter and BSF by rapid thermal co-diffusion of P, Al or B. Conference Record, the First WCPEC, Hawaii, 1994; 1519-1522.
8. Saitoh H, Wang X, Hashigami H, Abe T, Igarashi T, Gluntz S, Wettling W, Ebong A, Damiani BM, Rohatgi A, Yamasaki I, Nunoi T, Sawai H, Ohtsuka H, Yazawa Y, Warabisako T, Zhao W, Green MA. Light degradation and control of low-resistivity CZ-Si solar cells - an international joint research. Technical Digest of the International PVESC-11, Hokkaido, 1999; 553-556.
9. Kinoshita T, Shima M, Terakawa A, Isomura M, Haku H, Wakisaka K, Tanaka M, Kiyama S, Tsuda S. Effects of hydrogen dilution on a-Si/a-SiGe tandem solar cells. Conference Record, the 14th EC-PVSEC, Barcelona, 1997; 566-569.
10. Taguchi M, Tanaka M, Matsuyama T, Matsuoka T, Tsuda S, Nakano S, Kishi Y, Kuwano Y. Improvement of the conversion efficiency of polycrystalline silicon thin film solar cell. Technical Digest of the International PVSEC-5, Kyoto, 1990; 689-692.
11. Wakisaka K, Taguchi M, Sawada T, Tanaka M, Matsuyama T, Matsuoka T, Tsuda S, Nakano S, Kishi Y, Kuwano T. More than 16% solar cells with a new HIT (doped a-Si./non-doped a-Si,crystalline Si) structure. Conference Record, the 22nd IEEE PVSC, Las Vegas, 1991; 887-892.
12. Takahama T, Taguchi M, Kuroda S, Matsuyama T, Tanaka M, Tsuda S, Nakano S, Kuwano Y. High efficiency single- and poly-crystalline silicon solar cells using ACJ-HlT structure. Proceedings of the 11Ath ECPVSEC, Montreux, 1992; 1057-1060.
13. Sawada T, Terada N, Tsuge S, Baba T, Takahama T, Wakisaka K, Tsuda S, Nakano S. High efficiency a-Si c-Si heterqjunction solar cell. Conference Record, the First WCPEC, Hawaii, 1994; 1219-1226.
14. Sasaki A, Robson PN. Carrier transport process in p-n junction layers with a distribution of trap levels. Solid-State Electronics, 1991; 34: 959-967.
15. Gluntz SW, Rein S, Warta W, Knobloch J, Wettling W. Degradation of carrier lifetime in CZ silicon solar cells. Technical Digest of the International PVSEC-11, Hokkaido, 1999; 549-552.
16. Kurita K, Shingyouji T. Low surface recombination velocity on silicon wafer surfaces due to iodine-ethanol treatment. Jpn. J. Appl. Phys. 1999; 38: 5710-5714.
17. Yablonovitch E, Gmitter T, Swanson RM, Kwark YH. A 720 m V open circuit voltage SiOx:c-Si:SiOx double heterostructure solar cell. Appl. Phys. Lett. 1985:47(11): 1211-1213.
18. Zhao J, Wang A, Aberle A, Wenham SR, Green MA. 717-mV open-circuit voltage silicon solar cells using hole constrained surface passivation. Appl. Phys. Lett. 1994; 64(2): 199-201.
19. Van Cleef MWM, Rubinelli FA, Schropp REl. Effects on the band discontinuities on photocarrier collection in a-SiC:H/c-Si heterojunction solar cells. Proceedings of the 14th EC-PVSEC, Barcelona, 1997, 50-52.