Properties of high efficiency silicon heterojunction cells

Energy Procedia

Volumn 8, Issue , 2011, Pages 153-159

  Batzner D L ^a   Andrault, Y ^a   Andreetta, L ^a   Buchel A ^a   Frammelsberger, W ^a   Guerin, C ^a   Holm, N ^a   Lachenal, D ^a   Meixenberger, J ^a   Papet, P ^a   Rau, B ^a   Strahm, B ^a   Wahli, G ^a   Wunsch F ^a  

^a Rau Switzerland AG   (Switzerland)

Author keywords

Heterojunction; High efficiency; Irradiaton dependence; Passivation; Temperature coefficient

Indexed keywords

CRYSTALLINE MATERIALS; HETEROJUNCTIONS; PASSIVATION; SILICON; SOLAR CELLS; SOLAR ENERGY; SOLAR POWER GENERATION; TEMPERATURE;

CRYSTALLINE SILICON SOLAR CELLS; HIGH EFFICIENCY DEVICES; HIGH-EFFICIENCY; HIGH-EFFICIENCY SOLAR CELLS; IRRADIATON DEPENDENCE; OPERATION CONDITIONS; SILICON HETEROJUNCTIONS; TEMPERATURE COEFFICIENT;

SILICON SOLAR CELLS;

EID: 80052081652     PISSN: 18766102     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1016/j.egypro.2011.06.117     Document Type: Conference Paper

References (4)

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2. D. Lachenal, Y. Andrault, D. Bätzner, C. Guerin, M. Kobas, B. Mendes, B. Strahm, M. Tesfai, G. Wahli, A. Buechel; High efficiency silicon heterojunction solar cell activities in Neuchatel, switzerland, Proceedings of the European PVSEC 2010.
3. Singh P, Singh SN, Lal M, Husain M, Temperature dependence of I-V characteristics and performance parameters of silicon solar cell, Solar Energy Materials & Solar Cells 92 (2008) 1611-1616.
4. F. Tanay F, Dubois F, Enjalbert N, Veirman J; Low temperature-coefficient for solar cells processed from solar-grade silicon purified by metallurgical route, Prog. Photovolt: Res. Appl. (2011), DOI: 10.1002.