Enhanced lateral current transport via the front N+ diffused layer of N-type high-efficiency back-junction back-contact silicon solar cells

Progress in Photovoltaics: Research and Applications

Volumn 17, Issue 1, 2009, Pages 47-56

  Granek, Filip ^a   Hermle, Martin ^a   Huljić, Dominik M ^b   Schultz Wittmann, Oliver ^a,c   Glunz, Stefan W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

^b Q Cells AG   (Germany)

^c Solexel Inc   (United States)

Author keywords

Back contact; Back junction; Front surface field; High efficiency; Si solar cells

Indexed keywords

APPLICATIONS; DATA STORAGE EQUIPMENT; ELECTRIC RESISTANCE; PHOSPHORUS; PHOTOVOLTAIC CELLS; SILICON SOLAR CELLS; SOLAR CELLS; SOLAR EQUIPMENT; TWO DIMENSIONAL;

BACK-CONTACT; BACK-JUNCTION; FRONT SURFACE FIELD; HIGH-EFFICIENCY; SI SOLAR CELLS;

SURFACE RESISTANCE;

EID: 58249102076     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.862     Document Type: Article

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