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Applied Physics Letters

Volumn 97, Issue 15, 2010, Pages

Hydrogen induced passivation of Si interfaces by Al2 O 3 films and SiO2/Al2 O3 stacks

(4) Dingemans, G a Beyer, W b Van De Sanden, M C M a Kessels, W M M a

a EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

b FORSCHUNGSZENTRUM JÜLICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CHEMICAL PASSIVATION; HYDROGEN IN SI; INTERFACE DEFECTS; THERMAL STABILITY;

ALUMINUM; ATOMIC LAYER DEPOSITION; DEUTERIUM; HYDROGEN; SILICON; SILICON COMPOUNDS; THERMODYNAMIC STABILITY;

PASSIVATION;

EID: 77958107714 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3497014 Document Type: Article

Times cited : (181)

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