I-V characteristics of a-Si-c-Si hetero-junction diodes made by hot wire CVD

Solar Energy Materials and Solar Cells

Volumn 95, Issue 8, 2011, Pages 1996-2000

  Hernández Como, Norberto ^a   Morales Acevedo, Arturo ^a   Matsumoto, Y ^a  

^a DEPARTAMENTO DE FÍSICA   (Mexico)

Author keywords

Hetero junction; Hot wire CVD; Hydrogenated amorphous silicon

Indexed keywords

A-SI:H; CRYSTALLINE SILICONS; DARK CONDITIONS; DEPOSITION PARAMETERS; DIBORANE; FILAMENT TEMPERATURE; HIGH SATURATION CURRENT; HOT WIRE CHEMICAL VAPOR DEPOSITION; HOT WIRE CVD; HYDROGENATED AMORPHOUS SILICON (A-SI:H); IDEALITY FACTORS; INTRINSIC LAYER; IV CHARACTERISTICS; P-TYPE; PASSIVATION EFFECT; SATURATION CURRENT DENSITIES; SUBSTRATE TEMPERATURE; TUNGSTEN FILAMENTS;

AMORPHOUS FILMS; AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; DIODES; HYDROGENATION; PASSIVATION; SILICON; SUBSTRATES; TUNGSTEN; WIRE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79958155568     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.05.024     Document Type: Article

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