Industrially feasible rear passivation and contacting scheme for high-efficiency n-type solar cells yielding a Voc of 700 mV

IEEE Transactions on Electron Devices

Volumn 57, Issue 8, 2010, Pages 2032-2036

  Suwito, Dominik ^a   Jäger, Ulrich ^a   Benick, Jan ^a   Janz, Stefan ^a   Hermle, Martin ^a   Glunz, Stefan W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Photovoltaic cells; solid lasers; surface passivation

Indexed keywords

APERTURE AREA; BACK SURFACE FIELDS; CONTACT FORMATION; CONTACT POINTS; FILL FACTOR; HIGH EFFICIENCY; LASER PROCESS; PASSIVATION LAYER; REAR SIDE; REAR SURFACES; SOLAR CELL EFFICIENCIES; SOLID LASER; STILL MISSING; SURFACE PASSIVATION;

AMORPHOUS SILICON; DOPING (ADDITIVES); OPEN CIRCUIT VOLTAGE; PHOSPHORUS; PHOTOELECTROCHEMICAL CELLS; PHOTOVOLTAIC CELLS; PULSED LASER APPLICATIONS; SILICON CARBIDE; SOLAR CELLS;

PASSIVATION;

EID: 77955172982     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2051194     Document Type: Article

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