Casting single crystal silicon: novel defect profiles from BP solar's mono2 ™ wafers

Solid State Phenomena

Volumn 131-133, Issue , 2008, Pages 1-8

  Stoddard, Nathan ^a   Bei, Wu ^a   Witting, Ian ^b   Wagener, Magnus ^b   Yongkook, Park ^b   Rozgonyi, George ^b   Clark, Roger ^a  

^a BP Solar   (United States)

^b North Carolina State University   (United States)

Author keywords

Casting; Defects; Silicon; Solar cells

Indexed keywords

CASTING; CRYSTAL GROWTH; DEFECTS; SILICON; SOLAR CELLS; CARRIER LIFETIME; INGOTS; SEMICONDUCTOR DEVICE MANUFACTURE; SINGLE CRYSTALS;

DISLOCATION INCORPORATION; MONOCRYSTALLINITY; BP SOLAR; DEFECT TYPE; LARGE VOLUMES; MINORITY CARRIER LIFETIMES; PRINT PROCESS; SINGLE CRYSTAL SILICON;

SINGLE CRYSTALS; SILICON WAFERS;

EID: 38549097062     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

References (11)

1. O. Schultz, S.W. Glunz, S. Riepe and G.P. Willeke: Prog. Photovolt: Res. Appl. Vol. 14 (2006), p. 711.
2. W. Schröter, V. Kveder, M. Seibt, H. Ewe, H. Hedemann, F. Riedel and A. Sattler: Mat. Sci. and Eng. B Vol. 72 (2000), p. 80
3. B.L. Sopori: Mat. Sci. Forum Vol. 258 (1997), p. 527
4. F. Schmid: J. Electronic Materials Vol. 5 (1976), p. 436
5. F. Durand: Solar Energy Materials & Solar Cells Vol. 72 (2002), p. 125
6. H.J. Möller, L. Long, M. Werner and D. Yang: Phys. Stat. Sol. A Vol. 171 (1999), p. 175
7. V.V. Voronkov and R. Falster: J. Appl. Phys. Vol. 86 (1999), p. 5975
8. V.V. Voronkov: J. Crystal Growth Vol. 59 (1982), p. 625
9. M.S. Kulkarni: J. Crystal Growth Vol. 303 (2007), p. 438
10. S. Kawado and T. Maruyama: J. Appl. Cryst. Vol. 5 (1972), p. 281
11. D. Macdonald, A. Cuevas, A. Kinomura, Y. Nakano and L.J. Geerligs: J. Appl. Phys. Vol. 97 (2005) p. 033523