Carrier recombination at silicon-silicon nitride interfaces fabricated by plasma-enhanced chemical vapor deposition

Journal of Applied Physics

Volumn 85, Issue 7, 1999, Pages 3626-3633

  Schmidt, Jan ^a   Aberle, Armin G ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; INTERFACES (MATERIALS); PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON WAFERS; SINGLE CRYSTALS;

CHARGE DENSITIES; LIGHT-BASED MICROWAVE-DETECTED PHOTOCONDUCTANCE DECAY (MW-PCD) METHOD; SHOCKLEY-READ-HALL FORMALISMS;

SEMICONDUCTING FILMS;

EID: 0032621947     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.369725     Document Type: Article

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