Enhanced current collection in backcontacted back-junction Si solar cells by overcompensating a boron emitter with a phosphorus base-type doping

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 8, 2010, Pages 1978-1981

  Reichel, Christian ^a   Granek, Filip ^a   Hermle, Martin ^a   Glunz, Stefan W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Back contacted silicon solar cells; Back junction silicon solar cells; Current transport; Photoelectric energy conversion

Indexed keywords

BACK-CONTACTED SILICON SOLAR CELLS; BACK-JUNCTION SILICON SOLAR CELLS; BASE MATERIAL; CARRIER COLLECTION; CURRENT COLLECTION; CURRENT TRANSPORT; EMITTER DOPING; EXTERNAL QUANTUM EFFICIENCY; LOSS MECHANISMS; P-N JUNCTION; PHOTOELECTRIC ENERGY CONVERSION; REAR SIDE; SI SOLAR CELLS; SOLAR CELL DESIGN;

BORON; BORON COMPOUNDS; ELECTRIC NETWORK ANALYSIS; ENERGY CONVERSION; PHOSPHORUS; PHOTOELECTRICITY; SEMICONDUCTOR JUNCTIONS; SILICON SOLAR CELLS; SOLAR CELLS; SWITCHING CIRCUITS;

SOLAR ENERGY;

EID: 77957968588     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925509     Document Type: Article

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