Defect states on the surfaces of a P-type c-Si wafer and how they control the performance of a double heterojunction solar cell

Solar Energy Materials and Solar Cells

Volumn 92, Issue 11, 2008, Pages 1500-1507

  Datta, Antara ^a   Damon Lacoste, J ^b   Roca i Cabarrocas, P ^b   Chatterjee, P ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

^b LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

Author keywords

Defects on crystalline silicon wafer; Device modeling; Heterojunction with intrinsic thin layers (HIT) solar cells; Solar cell output parameters

Indexed keywords

CELLS; CURRENT DENSITY; CYTOLOGY; DIRECT ENERGY CONVERSION; NONMETALS; PHOTOVOLTAIC CELLS; SILICON; SILICON WAFERS; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT; SURFACE DEFECTS; SWITCHING CIRCUITS; TECHNOLOGY;

CRYSTALLINE SILICONS; DEFECT STATES; DEFECTS ON CRYSTALLINE SILICON WAFER; DEVICE MODELING; FILL FACTOR; FRONT SURFACES; HETERO JUNCTION; HETEROJUNCTION WITH INTRINSIC THIN LAYERS (HIT) SOLAR CELLS; HETEROJUNCTION WITH INTRINSIC THIN-LAYER; HIGH-EFFICIENCY; LOW COSTS; NUMERICAL MODELLING; OPEN-CIRCUIT VOLTAGE; OUTPUT PARAMETERS; REAR SURFACES; SHORT-CIRCUIT CURRENT DENSITY; SI-WAFER; SILICON TECHNOLOGIES; SOLAR CELL OUTPUT PARAMETERS;

AMORPHOUS SILICON;

EID: 50249178179     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.06.015     Document Type: Article

References (27)

1. E. Maruyama, A. Terakawa, M. Taguchi, Y. Yoshimine, D. Ide, T. Baba, M. Shima, H. Sakata, M. Tanaka, Sanyo's challenges to the development of high efficiency HIT solar cells and the expansion of HIT business, in: Proceedings of the 4th World Conference on Photovoltaic Energy Conversion, 9-12 May 2006, Hawaii, USA.
2. T. Sawada, N. Terada, S. Tsuge, T. Baba, T. Takahama, K. Wakisaka, S. Tsuda, S. Nakano, High efficiency a-Si:H/c-Si heterojunction solar cell, in: Proceedings of the 1st World Conference on Photovoltaic Energy Conversion, 5-9 December 1994, Hawaii, USA, pp. 1219-1224.
3. H. Sakata, T. Nakai, T. Baba, M. Taguchi, S. Tsuge, K. Uchihashi, S. Kiyjama, 20.7% highest efficiency large area (100.5%) HITTM cell, in: Proceedings of the 28th IEEE Photovoltaic Specialists' Conference, 2000, Alaska, USA, pp. 7-12.
4. P.-J. Ribeyron, A. Vandeneynde, J. Damon-Lacoste, D. Eon, P. Roca i Cabarrocas, R. Chouffot, J.-P. Kleider, A.-S. Ozanne, F. Collet, L. Francke, O. Salasca, R. Brüggemann, Polymorphous/crystalline silicon heterojunction solar cells: optimisation on P-type monocrystalline silicon, in: Proceedings of 22nd European Photovoltaic Solar Energy Conference, 3-7 September 2007, Milan, Italy.
5. Wang T.H., Iwaniczko E., Page M.R., Levi D.H., Yan Y., Branz H.M., and Wang Q. Effect of emitter deposition temperature on surface passivation in hot-wire chemical vapour deposited silicon heterojunction solar cell. Thin Solid Films 501 (2006) 284
6. Olibet S., Vallat-Sauvain E., and Ballif C. Effect of light induced degradation on passivating properties of a-Si:H layers deposited on crystalline Si. Phys. Rev. B 76 (2007) 035326-1
7. Schmidt M., Korte L., Laades A., Stangl R., Schubert Ch., Angermann H., Conrad E., and Maydell K.V. Physical aspects of a-Si:H/c-Si hetero-junction solar cells. Thin Solid Films 515 (2007) 7475
8. van Cleef M.W.M., Rubinelli F.A., Rizzoli R., Pinghini R., Schropp R.E.I., and van der Weg W.F. Amorphous silicon carbide/crystalline silicon heterojunction solar cells: a comprehensive study of the photo carrier collection. Jpn. J. Appl. Phys. 37 (1998) 3926
9. + amorphous silicon carbide n crystalline silicon heterojunction solar cells. Appl. Phys. Lett. 73 (1998) 2609
10. R. Stangl, A. Froitzheim, L. Elstner, W. Fuhs, Amorphous/crystalline silicon heterojunction solar cells, a simulation study, in: Proceedings of 17th European Photovoltaic Solar Energy Conference, 22-26 October 2001, Munich, Germany, pp. 1387-1390.
11. A. Froitzheim, R. Stangl, L. Elstner, M. Schmidt, W. Fuhs, Interface recombination in amorphous/crystalline silicon solar cells, a simulation study, in: Conference record 29th IEEE Photovoltaic Specialists' Conference, 19-24 May 2002, New Orleans, USA, pp. 1238-1241.
12. Madhumita Nath, Chatterjee P., Damon-Lacoste J., and Roca i Cabarrocas P. Criteria for improved open-circuit voltage in a-Si:H(N)/c-Si (P) front heterojunction with intrinsic thin layer solar cells. J. Appl. Phys. 103 (2008) 034506-1
13. M. Schmidt, H. Angermann, E. Conrad, L. Korte, A. Laades, K.V. Maydell, Ch. Schubert, R. Strangl, Physical and technological aspects of a-Si:H/c-Si hetero-junction solar cells, in: Proceedings of 4th World Conference on Photovoltaic Energy Conversion, 7-12 May 2006, Hawaii, USA, pp. 1433-1438.
14. Veschetti Y., Muller J.-C., Damon-Lacoste J., Roca i Cabarrocas P., Gudovskikh A.S., Kleider J.-P., Ribeyron P.-J., and Rolland E. Optimisation of amorphous and polymorphous thin silicon layers for the formation of the front-side of heterojunction solar cells on p-type crystalline silicon substrates. Thin Solid Films 511-512 (2006) 543
15. Roca i Cabarrocas P., Chevrier J.B., Huc J., Lloret A., Parey J.Y., and Schmitt J.P.M. A fully automated hot-wall multiplasma-monochamber reactor for thin film deposition. J. Vac. Sci. Technol. A 9 (1991) 2331
16. +)/a-Si:H(i)/c-Si(p) heterojunctions through lifetime spectroscopy, in: Proceedings of the 19th European Photovoltaic Solar Energy Conference, 7-11 June 2004, Paris, France, pp. 1185-1188.
17. Chatterjee P., Favre M., Leblanc F., and Perrin J. A global electrical-optical model of thin film solar cells on textured substrates. Mat. Res. Soc. Symp. Proc. 426 (1996) 593
18. Palit N., and Chatterjee P. A computer analysis of double junction solar cells with a-Si:H absorber layers. Solar Energy Mater. Solar Cells 53 (1998) 235
19. Chatterjee P. Photovoltaic performance of a-Si:H homojunction p-i-n solar cells: a computer simulation study. J. Appl. Phys. 76 (1994) 1301
20. Chatterjee P. A computer analysis of the effect of a wide-band-gap emitter layer on the performance of a-Si:H-based heterojunction solar cells. J. Appl. Phys. 79 (1996) 7339
21. McElheny P.J., Arch J.K., -S. Lin H., and Fonash S.J. Range of validity of surface photo voltage diffusion length measurement: a computer simulation. J. Appl. Phys. 64 (1988) 1254
22. Damon-Lacoste J., Roca i Cabarrocas P., Chatterjee P., Veschetti Y., Gudovskikh A.S., Kleider J.P., and Ribeyron P.J. About the efficiency limits of heterojunction solar cells. J. Non-Crystalline Solids 352 (2006) 1928
23. Leblanc F., Perrin J., and Schmitt J. Numerical modeling of the optical properties of hydrogenated amorphous-silicon-based p-i-n solar cells deposited on rough transparent conducting oxide substrates. J. Appl. Phys. 75 (1994) 1074
24. Essick J.M., and David Cohen J. Band offsets and deep defect distribution in hydrogenated amorphous silicon-crystalline silicon heterostructures. Appl. Phys. Lett. 55 (1989) 1232
25. Matsuura H., Okuno T., Okushi H., and Tanaka K. Electrical properties of n-amorphous/p-crystalline silicon heterostructures. J. Appl. Phys. 55 (1984) 1012
26. Mimura H., and Hatanaka Y. Energy-band discontinuities in a heterojunction of amorphous hydrogenated Si and crystalline Si measured by internal photoemission. Appl. Phys. Lett. 50 (1987) 326
27. Z.Y. Wu, J.M. Siefert, B. Equer, The mobility edges of amorphous silicon - carbon alloys, in Proceedings of the 10th European Photovoltaic Solar Energy Conference, Lisbon, Portugal, 1991, pp. 953-956.