Influence of defect type on hydrogen passivation efficacy in multicrystalline silicon solar cells

Progress in Photovoltaics: Research and Applications

Volumn 19, Issue 2, 2011, Pages 187-191

  Bertoni, M I ^a   Hudelson, S ^a   Newman, B K ^a   Fenning, D P ^a   Dekkers, H F W ^b   Cornagliotti, E ^b   Zuschlag, A ^c   Micard, G ^c   Hahn, G ^c   Coletti, G ^d   Lai, B ^e   Buonassisi, T ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b IMEC   (Belgium)

^c UNIVERSITY OF KONSTANZ   (Germany)

^d TNO   (Netherlands)

^e ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

defects; dislocations; hydrogen passivation; iron; multicrystalline silicon

Indexed keywords

DEFECT DENSITY; DEFECTS; DISLOCATIONS (CRYSTALS); FLUORESCENCE MICROSCOPY; GRAIN BOUNDARIES; HYDROGEN; IRON; LASER BEAMS; POLYSILICON; PRECIPITATION (CHEMICAL); SILICIDES; SILICON SOLAR CELLS; SOLAR CELLS; SOLAR POWER GENERATION;

ELECTRON BACK SCATTER DIFFRACTION; HYDROGEN PASSIVATION; LASER BEAM INDUCED CURRENT; MULTI-CRYSTALLINE SILICON; MULTI-CRYSTALLINE SILICON SOLAR CELLS; RECOMBINATION ACTIVITY; STRONG CORRELATION; X-RAY FLUORESCENCE MICROSCOPY;

PASSIVATION;

EID: 79952167185     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1008     Document Type: Article

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