Impact of annealing-induced compaction on electronic properties of atomic-layer-deposited Al2O3

Applied Physics Letters

Volumn 81, Issue 9, 2002, Pages 1678-1680

  Afanas'Ev, V V ^a   Stesmans, A ^a   Mrstik, B J ^b   Zhao, C ^c  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b NAVAL RESEARCH LABORATORY   (United States)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA SURFACE; ATOMIC LAYER DEPOSITED; COMPACTION PROCESS; CONDUCTING GRAINS; INCOMPLETE TRANSFORMATION;

ALUMINA; COMPACTION; ELECTRONIC PROPERTIES; GRAIN BOUNDARIES; LEAKAGE CURRENTS;

ALUMINUM;

EID: 79955994990     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1501163     Document Type: Article

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