Influence of stoichiometry of direct plasma-enhanced chemical vapor deposited SiN x films and silicon substrate surface roughness on surface passivation

Journal of Applied Physics

Volumn 97, Issue 6, 2005, Pages

  De Wolf, Stefaan ^a   Agostinelli, Guido ^a   Beaucarne, Guy ^a   Vitanov, Petko ^b  

^a IMEC   (Belgium)

^b BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITATION FREQUENCY; SILICON SUBSTRATES; SURFACE PASSIVATION; WIRE-SAW DAMAGE;

ANTIREFLECTION COATINGS; DEGRADATION; PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STOICHIOMETRY; SURFACE ROUGHNESS; TEXTURES;

SILICON NITRIDE;

EID: 20444437942     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1861138     Document Type: Article

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