Influence of annealing and Al 2O 3 properties on the hydrogen-induced passivation of the Si/SiO 2 interface

Journal of Applied Physics

Volumn 111, Issue 9, 2012, Pages

  Dingemans, G ^a   Einsele, F ^b,c   Beyer, W ^b   Van De Sanden, M C M ^a   Kessels, W M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

^c ROBERT BOSCH GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; ATOMIC HYDROGEN; CHEMICAL PASSIVATION; DEFECT PASSIVATION; DEPOSITION TEMPERATURES; FILM MICROSTRUCTURES; HIGH-DENSITY FILMS; HYDROGEN CONCENTRATION; HYDROGEN DIFFUSION; INTERMEDIATE MATERIALS; LOW DENSITY; LOWER DENSITY; MASS DENSITIES; MODERATE TEMPERATURE; PASSIVATION PROPERTIES; SCREEN-PRINTED; SILICON SURFACES;

ALUMINUM; ANNEALING; ATOMIC LAYER DEPOSITION; ATOMS; MICROSTRUCTURE; NEON; PASSIVATION; THERMODYNAMIC STABILITY;

HYDROGEN;

EID: 84863655740     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4709729     Document Type: Article

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