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Volumn 7, Issue 6, 1999, Pages 463-469

Comparison of boron- and gallium-doped p-type Czochralski silicon for photovoltaic application

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; SEMICONDUCTING BORON; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SILICON WAFERS;

EID: 0033365078     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-159X(199911/12)7:6<463::AID-PIP293>3.0.CO;2-H     Document Type: Article
Times cited : (127)

References (16)
  • 1
    • 4243653608 scopus 로고    scopus 로고
    • personal communication
    • A. Räuber, personal communication, 1999.
    • (1999)
    • Räuber, A.1
  • 2
  • 4
    • 0011831936 scopus 로고    scopus 로고
    • Bulk lifetime decreasing phenomena induced by light-illumination in high-purity p-type CZ-Si crystals
    • San Antonio, USA
    • T. Yoshida and Y. Kitagawara, 'Bulk lifetime decreasing phenomena induced by light-illumination in high-purity p-type CZ-Si crystals, Proceedings of the 4th International Symposium on High Purity Silicon IV, San Antonio, USA, 1996, pp. 450-454.
    • (1996) Proceedings of the 4th International Symposium on High Purity Silicon IV , vol.4 , pp. 450-454
    • Yoshida, T.1    Kitagawara, Y.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.