메뉴 건너뛰기




Volumn 318, Issue 1, 2011, Pages 283-287

Nucleation and bulk growth control for high efficiency silicon ingot casting

Author keywords

A1. Directional solidification; A2. Growth from melt; A2. Industrial crystallization; B3. Solar cells

Indexed keywords

A2. INDUSTRIAL CRYSTALLIZATION; B3.SOLAR CELL; BULK GROWTH; DIRECTIONAL SOLIDIFICATION; EXPERIMENTAL MEASUREMENTS; FLUID FLOW; GROWTH FROM MELTS; GROWTH SYSTEMS; HIGH EFFICIENCY; HOT ZONE; INDUSTRIAL GROWTH; INDUSTRIAL SYSTEMS; SILICON INGOT;

EID: 79952739469     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.10.103     Document Type: Conference Paper
Times cited : (33)

References (15)
  • 5
    • 77952776065 scopus 로고    scopus 로고
    • High-quality multi-crystalline silicon growth for solar cells by grain-controlled directional solidification
    • K.M. Yeh, C.K. Hseih, W.C. Hsu, and C.W. Lan High-quality multi-crystalline silicon growth for solar cells by grain-controlled directional solidification Prog. Photovolt. Res. Appl. 18 2010 265
    • (2010) Prog. Photovolt. Res. Appl. , vol.18 , pp. 265
    • Yeh, K.M.1    Hseih, C.K.2    Hsu, W.C.3    Lan, C.W.4
  • 6
    • 58549104715 scopus 로고    scopus 로고
    • Grain control using spot cooling in multi-crystalline silicon crystal growth
    • T.Y. Wang, S.L. Hsu, C.C. Fei, K.M. Yei, W.C. Hsu, and C.W. Lan Grain control using spot cooling in multi-crystalline silicon crystal growth J. Cryst. Growth 311 2009 263
    • (2009) J. Cryst. Growth , vol.311 , pp. 263
    • Wang, T.Y.1    Hsu, S.L.2    Fei, C.C.3    Yei, K.M.4    Hsu, W.C.5    Lan, C.W.6
  • 7
    • 67649395521 scopus 로고    scopus 로고
    • Modeling and improvement of silicon ingot directional solidification for industrial production systems
    • J.A. Wei, H. Zhang, L.L. Zheng, C.L. Wang, and B. Zhao Modeling and improvement of silicon ingot directional solidification for industrial production systems Sol. Energ. Mater. Sol. C. 93 2009 1531
    • (2009) Sol. Energ. Mater. Sol. C. , vol.93 , pp. 1531
    • Wei, J.A.1    Zhang, H.2    Zheng, L.L.3    Wang, C.L.4    Zhao, B.5
  • 8
    • 29444436350 scopus 로고    scopus 로고
    • Growth rate and impurity distribution in multicrystalline silicon for solar cells
    • R. Kvande, O. Mjos, and B. Ryningen Growth rate and impurity distribution in multicrystalline silicon for solar cells Mater. Sci. Eng. A413414 2005 545
    • (2005) Mater. Sci. Eng. , vol.413-414 , pp. 545
    • Kvande, R.1    Mjos, O.2    Ryningen, B.3
  • 9
    • 59749101114 scopus 로고    scopus 로고
    • Influence of crucible and coating quality on the properties of multicrystalline silicon for solar cells
    • R. Kvande, L. Arnberg, and C. Martin Influence of crucible and coating quality on the properties of multicrystalline silicon for solar cells J. Cryst. Growth 311 2009 765
    • (2009) J. Cryst. Growth , vol.311 , pp. 765
    • Kvande, R.1    Arnberg, L.2    Martin, C.3
  • 11
    • 34047252142 scopus 로고    scopus 로고
    • 3D dynamic mesh numerical model for multi-crystalline silicon furnaces
    • Y. Delannoy, F. Barvinschi, and T. Duffar 3D dynamic mesh numerical model for multi-crystalline silicon furnaces J. Cryst. Growth 303 2007 170
    • (2007) J. Cryst. Growth , vol.303 , pp. 170
    • Delannoy, Y.1    Barvinschi, F.2    Duffar, T.3
  • 12
    • 57649183671 scopus 로고    scopus 로고
    • Modelling of the transition from a planar faceted front to equiaxed growth: Application to photovoltaic polycrystalline silicon
    • N. Mangelinck-Noel, and T. Duffar Modelling of the transition from a planar faceted front to equiaxed growth: application to photovoltaic polycrystalline silicon J. Cryst. Growth 311 2008 20
    • (2008) J. Cryst. Growth , vol.311 , pp. 20
    • Mangelinck-Noel, N.1    Duffar, T.2
  • 13
    • 39649089828 scopus 로고    scopus 로고
    • Numerical analysis of influence of crucible shape on interface shape in a unidirectional solidification process
    • H. Miyazawa, L.J. Liu, and K. Kakimoto Numerical analysis of influence of crucible shape on interface shape in a unidirectional solidification process J. Cryst. Growth 310 2008 1142
    • (2008) J. Cryst. Growth , vol.310 , pp. 1142
    • Miyazawa, H.1    Liu, L.J.2    Kakimoto, K.3
  • 15
    • 77949912393 scopus 로고    scopus 로고
    • Crystal growth of high-purity multicrystalline silicon using a undirectional solidification furnace for solar cells
    • B. Gao, X.J. Chen, S. Nakano, and K. Kakimotom Crystal growth of high-purity multicrystalline silicon using a undirectional solidification furnace for solar cells J. Cryst. Growth 312 2010 1572
    • (2010) J. Cryst. Growth , vol.312 , pp. 1572
    • Gao, B.1    Chen, X.J.2    Nakano, S.3    Kakimotom, K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.