-
1
-
-
0002572435
-
Atomic layer epitaxy
-
T. Suntola, Atomic layer epitaxy, Thin Solid Films, 216, 84-89 (1992).
-
(1992)
Thin Solid Films
, vol.216
, pp. 84-89
-
-
Suntola, T.1
-
2
-
-
31944442603
-
Atomic layer epitaxy
-
T. Suntola, Atomic layer epitaxy, Mater. Sci. Rep., 4, 261-312 (1989).
-
(1989)
Mater. Sci. Rep.
, vol.4
, pp. 261-312
-
-
Suntola, T.1
-
3
-
-
0003724357
-
Method for producing compound thin films
-
U. S. Patent No. 4, 058, 430
-
T. Suntola and J. Antson, Method for producing compound thin films, U. S. Patent No. 4, 058, 430 (1977).
-
(1977)
-
-
Suntola, T.1
Antson, J.2
-
4
-
-
0018985030
-
A study of ZnTe films grown on glass substrates using an atomic layer evaporation method
-
M. Ahonen, M. Pessa, and T. Suntola, A study of ZnTe films grown on glass substrates using an atomic layer evaporation method, Thin Solid Films, 65, 301-307 (1980).
-
(1980)
Thin Solid Films
, vol.65
, pp. 301-307
-
-
Ahonen, M.1
Pessa, M.2
Suntola, T.3
-
5
-
-
0012073486
-
Atomic layer deposition of AlOx for thin film head gap applications
-
A. Paranjpe, S. Gopinath, T. Omstead, and R. Bubber, Atomic layer deposition of AlOx for thin film head gap applications, J. Electrochem. Soc., 148(9), G465-G471 (2001).
-
(2001)
J. Electrochem. Soc.
, vol.148
, Issue.9
-
-
Paranjpe, A.1
Gopinath, S.2
Omstead, T.3
Bubber, R.4
-
6
-
-
79959782276
-
Seeding atomic layer deposition of high-k dielectrics on epitaxial graphene with organic self-assembled monolayers
-
J. M. P. Alaboson, Q. H. Wang, J. D. Emery, A. L. Lipson, M. J. Bedzyk, J. W. Elam, M. J. Pellin, and M. C. Hersam, Seeding atomic layer deposition of high-k dielectrics on epitaxial graphene with organic self-assembled monolayers, ACS Nano, 5(6) 5223-5232 (2011).
-
(2011)
ACS Nano
, vol.5
, Issue.6
, pp. 5223-5232
-
-
Alaboson, J.M.P.1
Wang, Q.H.2
Emery, J.D.3
Lipson, A.L.4
Bedzyk, M.J.5
Elam, J.W.6
Pellin, M.J.7
Hersam, M.C.8
-
7
-
-
3042595571
-
Advanced electronic and optoelectronic materials by atomic layer deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics and other oxide materials
-
L. Niinisto, J. Paivasaari, J. Niinisto, M. Putkonen, andM. Nieminen, Advanced electronic and optoelectronic materials by atomic layer deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics and other oxide materials, Phys. Stat. Sol. (a), 201(7), 1443-1452 (2004).
-
(2004)
Phys. Stat. Sol. (A)
, vol.201
, Issue.7
, pp. 1443-1452
-
-
Niinisto, L.1
Paivasaari, J.2
Niinisto, J.3
Putkonen, M.4
Nieminen, M.5
-
8
-
-
74849090358
-
Atomic layer deposition of tantalum oxide thin films for their use as diffusion barriers in microelectronic devices
-
A. Lintanf-Saläun, A. Mantoux, E. Djurado, and E. Blanquet, Atomic layer deposition of tantalum oxide thin films for their use as diffusion barriers in microelectronic devices, Microelectr. Eng., 87, 373-378 (2010).
-
(2010)
Microelectr. Eng.
, vol.87
, pp. 373-378
-
-
Lintanf-Saläun, A.1
Mantoux, A.2
Djurado, E.3
Blanquet, E.4
-
9
-
-
75649140552
-
Atomic layer deposition: An overview
-
S. M. George, Atomic layer deposition: an overview, Chem. Rev., 110, 111-131 (2010).
-
(2010)
Chem. Rev.
, vol.110
, pp. 111-131
-
-
George, S.M.1
-
10
-
-
82055166276
-
ALD for clean energy conversion, utilization and storage
-
J. W. Elam, N. P. Dasgupta, and F. B. Prinz, ALD for clean energy conversion, utilization, and storage, MRS Bull., 36, 899-906 (2011).
-
(2011)
MRS Bull.
, vol.36
, pp. 899-906
-
-
Elam, J.W.1
Dasgupta, N.P.2
Prinz, F.B.3
-
11
-
-
82055203185
-
Progress and future directions for atomic layer deposition and ALD-based chemistry
-
G. N. Parsons, S. M. George, and M. Knez, Progress and future directions for atomic layer deposition and ALD-based chemistry, MRS Bull., 36, 865-871 (2011).
-
(2011)
MRS Bull.
, vol.36
, pp. 865-871
-
-
Parsons, G.N.1
George, S.M.2
Knez, M.3
-
12
-
-
0344667722
-
Atomic layer deposition chemistry: Recent developments and future challenges
-
M. Leskela and M. Ritala, Atomic layer deposition chemistry: recent developments and future challenges, Angewandte Chem. Int. Ed., 42, 5548-5554 (2003).
-
(2003)
Angewandte Chem. Int. Ed.
, vol.42
, pp. 5548-5554
-
-
Leskela, M.1
Ritala, M.2
-
14
-
-
34547689368
-
Exploitation of atomic layer deposition for nanostructured materials
-
M. Leskelä, M. Kemell, K. Kukli, V. Pore, E. Santala, M. Ritala, and J. Lu, Exploitation of atomic layer deposition for nanostructured materials, Mater. Sci. Eng. C, 27, 1504-1508 (2007).
-
(2007)
Mater. Sci. Eng. C
, vol.27
, pp. 1504-1508
-
-
Leskelä, M.1
Kemell, M.2
Kukli, K.3
Pore, V.4
Santala, E.5
Ritala, M.6
Lu, J.7
-
15
-
-
59249104425
-
Applications of atomic layer deposition to nanofabrication and emerging nanodevices
-
H. Kim, H. B. R. Lee, and W.-J. Maeng, Applications of atomic layer deposition to nanofabrication and emerging nanodevices, Thin Solid Films 517, 2563-2580 (2009).
-
(2009)
Thin Solid Films
, vol.517
, pp. 2563-2580
-
-
Kim, H.1
Lee, H.B.R.2
Maeng, W.-J.3
-
16
-
-
0032682630
-
Atomic layer epitaxy-A valuable tool for nanotechnology?
-
M. Ritala andM. Leskela, Atomic layer epitaxy-a valuable tool for nanotechnology?, Nanotechnology 10, 19-24 (1999).
-
(1999)
Nanotechnology
, vol.10
, pp. 19-24
-
-
Ritala, M.1
Leskela, M.2
-
17
-
-
0031546895
-
Advanced ALE processes of amorphous and polycrystalline films
-
M. Ritala, Advanced ALE processes of amorphous and polycrystalline films, Appl. Surf. Sci., 112, 223-230 (1997).
-
(1997)
Appl. Surf. Sci.
, vol.112
, pp. 223-230
-
-
Ritala, M.1
-
18
-
-
0034646723
-
Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources
-
M. Ritala, K. Kukli, A. Rahtu, P. I. Raisanen, M. Leskela, T. Sajavaara, and J. Keinonen, Atomic layer deposition of oxide thin films with metal alkoxides as oxygen sources, Science, 288, 319-321 (2000).
-
(2000)
Science
, vol.288
, pp. 319-321
-
-
Ritala, M.1
Kukli, K.2
Rahtu, A.3
Raisanen, P.I.4
Leskela, M.5
Sajavaara, T.6
Keinonen, J.7
-
19
-
-
0040218501
-
Perfectly conformal TiN and Al2O3 films deposited by atomic layer deposition
-
M. Ritala, M. Leskelä, J.-P. Dekker, C. Mutsaers, P. J. Soininen, and J. Skarp, Perfectly conformal TiN and Al2O3 films deposited by atomic layer deposition, Chem. Vapor Deposit., 5, 7-9 (1999).
-
(1999)
Chem. Vapor Deposit.
, vol.5
, pp. 7-9
-
-
Ritala, M.1
Leskelä, M.2
Dekker, J.-P.3
Mutsaers, C.4
Soininen, P.J.5
Skarp, J.6
-
20
-
-
0037156103
-
Atomic layer deposition (ALD): From precursors to thin film structures
-
M. Leskela and M. Ritala, Atomic layer deposition (ALD): from precursors to thin film structures, Thin Solid Films, 409, 138-146 (2002).
-
(2002)
Thin Solid Films
, vol.409
, pp. 138-146
-
-
Leskela, M.1
Ritala, M.2
-
21
-
-
36249028183
-
Synthesis and surface engineering of complex nanostructures by atomic layer deposition
-
M. Knez, K. Nielsch, and L. Niinistö, Synthesis and surface engineering of complex nanostructures by atomic layer deposition, Adv. Mater., 19, 3425-3438 (2007).
-
(2007)
Adv. Mater.
, vol.19
, pp. 3425-3438
-
-
Knez, M.1
Nielsch, K.2
Niinistö, L.3
-
22
-
-
9744227161
-
Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: Growth mode modeling and transmission electron microscopy
-
R. L. Puurunen, W. Vandervorst, W. F. A. Besling, O. Richard, H. Bender, T. Conard, C. Zhao, A. Delabie, M. Caymax, S. De Gendt, M. Heyns, M. M. Viitanen, M. de Ridder, H. H. Brongersma, Y. Tamminga, T. Dao, T. de Win, M. Verheijen, M. Kaiser, and M. Tuominen, Island growth in the atomic layer deposition of zirconium oxide and aluminum oxide on hydrogen-terminated silicon: growth mode modeling and transmission electron microscopy, J. Appl. Phys., 96, 4878-4889 (2004).
-
(2004)
J. Appl. Phys.
, vol.96
, pp. 4878-4889
-
-
Puurunen, R.L.1
Vandervorst, W.2
Besling, W.F.A.3
Richard, O.4
Bender, H.5
Conard, T.6
Zhao, C.7
Delabie, A.8
Caymax, M.9
De Gendt, S.10
Heyns, M.11
Viitanen, M.M.12
De Ridder, M.13
Brongersma, H.H.14
Tamminga, Y.15
Dao, T.16
De Win, T.17
Verheijen, M.18
Kaiser, M.19
Tuominen, M.20
more..
-
23
-
-
21744444606
-
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
-
R. L. Puurunen, Surface chemistry of atomic layer deposition: a case study for the trimethylaluminum/water process, J. Appl. Phys., 97, 121301/1-121301/52 (2005).
-
(2005)
J. Appl. Phys.
, vol.97
, pp. 1213011-12130152
-
-
Puurunen, R.L.1
-
24
-
-
0030218562
-
Surface chemistry for atomic layer growth
-
S. M. George, A. W. Ott, and J. W. Klaus, Surface chemistry for atomic layer growth, J. Phys. Chem., 100, 13121-13131 (1996).
-
(1996)
J. Phys. Chem.
, vol.100
, pp. 13121-13131
-
-
George, S.M.1
Ott, A.W.2
Klaus, J.W.3
-
26
-
-
64749084101
-
Atomic layer deposition of high-k oxides of the group 4 metals for memory applications
-
J. Niinisto, K. Kukli, M. Heikkila, M. Ritala, and M. Leskela, Atomic Layer Deposition of High-k Oxides of the Group 4 Metals for Memory Applications, Advanced Engineering Materials 11(4), 223-234 (2009).
-
(2009)
Advanced Engineering Materials
, vol.11
, Issue.4
, pp. 223-234
-
-
Niinisto, J.1
Kukli, K.2
Heikkila, M.3
Ritala, M.4
Leskela, M.5
-
27
-
-
2442460552
-
Growth per cycle in atomic layer deposition: Real application examples of a theoretical model
-
R. L. Puurunen, Growth per cycle in atomic layer deposition: real application examples of a theoretical model, Chem. Vapor Deposit., 9(6), 327-322 (2003).
-
(2003)
Chem. Vapor Deposit.
, vol.9
, Issue.6
, pp. 327-322
-
-
Puurunen, R.L.1
-
28
-
-
84856932833
-
Atomic layer deposition of nanostructured materials for energy and environmental applications
-
C. Marichy, M. Bechelany, and N. Pinna, Atomic layer deposition of nanostructured materials for energy and environmental applications, Adv. Mater., 24, 1017-1032 (2012).
-
(2012)
Adv. Mater.
, vol.24
, pp. 1017-1032
-
-
Marichy, C.1
Bechelany, M.2
Pinna, N.3
-
29
-
-
0022062138
-
Molecular layer epitaxy
-
J. Nishizawa, H. Abe, and T. Kurabayashi, Molecular layer epitaxy, J. Electrochem. Soc., 132, 1197-1200 (1985).
-
(1985)
J. Electrochem. Soc.
, vol.132
, pp. 1197-1200
-
-
Nishizawa, J.1
Abe, H.2
Kurabayashi, T.3
-
30
-
-
84855921964
-
Co3O4 as anode material for thin film micro-batteries prepared by remote plasma atomic layer deposition
-
M. E. Donders, H. C. M. Knoops, W. M. M. Kessels, and P. H. L. Notten, Co3O4 as anode material for thin film micro-batteries prepared by remote plasma atomic layer deposition, J. Power Sour., 203, 72-77 (2012).
-
(2012)
J. Power Sour.
, vol.203
, pp. 72-77
-
-
Donders, M.E.1
Knoops, H.C.M.2
Kessels, W.M.M.3
Notten, P.H.L.4
-
31
-
-
0032653080
-
Influence of substrate temperature on atomic layer growth and properties of HfO2 thin films
-
J. Aarik, A. Aidla, A.-A. Kiisler, T. Uustare, and V. Sammelselg, Influence of substrate temperature on atomic layer growth and properties of HfO2 thin films, Thin Solid Films, 340, 110-116 (1999).
-
(1999)
Thin Solid Films
, vol.340
, pp. 110-116
-
-
Aarik, J.1
Aidla, A.2
Kiisler, A.-A.3
Uustare, T.4
Sammelselg, V.5
-
32
-
-
0036685058
-
Viscous flow reactor with quartz crystal microbalance for thin film growth by atomic layer deposition
-
J. W. Elam, M. D. Groner, and S. M. George, Viscous flow reactor with quartz crystal microbalance for thin film growth by atomic layer deposition, Rev. Sci. Instrum., 73, 2981-2987 (2002).
-
(2002)
Rev. Sci. Instrum.
, vol.73
, pp. 2981-2987
-
-
Elam, J.W.1
Groner, M.D.2
George, S.M.3
-
33
-
-
0037469516
-
Effects of ozone as an oxygen source on the properties of the Al2O3 thin films prepared by atomic layer deposition
-
J. Kim, K. Chakrabarti, J. Lee, K.-Y. Oh, and C. Lee, Effects of ozone as an oxygen source on the properties of the Al2O3 thin films prepared by atomic layer deposition, Mater. Chem. Phys., 78, 733-738 (2003).
-
(2003)
Mater. Chem. Phys.
, vol.78
, pp. 733-738
-
-
Kim, J.1
Chakrabarti, K.2
Lee, J.3
Oh, K.-Y.4
Lee, C.5
-
34
-
-
0029184808
-
Surface chemistry of Al2O3 deposition using Al(CH3)3 and H2O in a binary reaction sequence
-
A. C. Dillon, A. W. Ott, J. D. Way, and S. M. George, Surface chemistry of Al2O3 deposition using Al(CH3)3 and H2O in a binary reaction sequence, Surf. Sci., 322, 230-242 (1995).
-
(1995)
Surf. Sci.
, vol.322
, pp. 230-242
-
-
Dillon, A.C.1
Ott, A.W.2
Way, J.D.3
George, S.M.4
-
35
-
-
0005357904
-
Modification of porous alumina membranes using Al2O3 atomic layer controlled deposition
-
A. W. Ott, J. W. Klaus, J. M. Johnson, S. M. George, K. C. McCarley, and J. D. Way, Modification of porous alumina membranes using Al2O3 atomic layer controlled deposition, Chem. Mater., 9(3), 707-714 (1997).
-
(1997)
Chem. Mater.
, vol.9
, Issue.3
, pp. 707-714
-
-
Ott, A.W.1
Klaus, J.W.2
Johnson, J.M.3
George, S.M.4
McCarley, K.C.5
Way, J.D.6
-
36
-
-
0030566216
-
Atomic layer controlled deposition of A12O3 films using binary reaction sequence chemistry
-
A. W. Ott, K. C. McCarley, J. W. Klaus, J. D. Way, and S. M. George, Atomic layer controlled deposition of A12O3 films using binary reaction sequence chemistry, Appl. Surf. Sci., 107, 128-136 (1996).
-
(1996)
Appl. Surf. Sci.
, vol.107
, pp. 128-136
-
-
Ott, A.W.1
McCarley, K.C.2
Klaus, J.W.3
Way, J.D.4
George, S.M.5
-
37
-
-
0031553497
-
A13O3 thin film growth on Si (100) using binary reaction sequence chemistry
-
A. W. Ott, J. W. Klaus, J. M. Johnson, and S. M. George, A13O3 thin film growth on Si (100) using binary reaction sequence chemistry, Thin Solid Films, 292, 135-144 (1997).
-
(1997)
Thin Solid Films
, vol.292
, pp. 135-144
-
-
Ott, A.W.1
Klaus, J.W.2
Johnson, J.M.3
George, S.M.4
-
38
-
-
79955040168
-
Low-temperature atomic layer deposition of Al2O3 thin coatings for corrosion protection of steel: Surface and electrochemical analysis
-
B. Dáz, E. Härkönen, J. Swiatowska, V. Maurice, A. Seyeux, P. Marcus, and M. Ritala, Low-temperature atomic layer deposition of Al2O3 thin coatings for corrosion protection of steel: Surface and electrochemical analysis, Corr. Sci., 53, 2168-2175 (2011).
-
(2011)
Corr. Sci.
, vol.53
, pp. 2168-2175
-
-
Dáz, B.1
Härkönen, E.2
Swiatowska, J.3
Maurice, V.4
Seyeux, A.5
Marcus, P.6
Ritala, M.7
-
39
-
-
35348828548
-
Tris(dialkylamino)aluminums: Syntheses, characterization, volatility comparison and atomic layer deposition of alumina thin films
-
C. R. Wade, C. Silvernail, C. Banerjee, A. Soulet, J. McAndrew, and J. A. Belot, Tris(dialkylamino)aluminums: Syntheses, characterization, volatility comparison and atomic layer deposition of alumina thin films, Mater. Lett., 61, 5079-5082 (2007).
-
(2007)
Mater. Lett.
, vol.61
, pp. 5079-5082
-
-
Wade, C.R.1
Silvernail, C.2
Banerjee, C.3
Soulet, A.4
McAndrew, J.5
Belot, J.A.6
-
40
-
-
0041528510
-
Atomic layer deposition of Al2O3 thin films using dimethylaluminum isopropoxide and water
-
W. Cho, K. Sung, K.-S. An, S. S. Lee, T.-M. Chung, and Y. Kim, Atomic layer deposition of Al2O3 thin films using dimethylaluminum isopropoxide and water, J. Vacuum Sci. Technol. A, 21(4) 1366-1370 (2003).
-
(2003)
J. Vacuum Sci. Technol. A
, vol.21
, Issue.4
, pp. 1366-1370
-
-
Cho, W.1
Sung, K.2
An, K.-S.3
Lee, S.S.4
Chung, T.-M.5
Kim, Y.6
-
41
-
-
0030566291
-
Surface reactions in A12O3 growth from trimethylaluminium and water by atomic layer epitaxy
-
E.-L. Lakomaa, A. Root, and T. Suntola, Surface reactions in A12O3 growth from trimethylaluminium and water by atomic layer epitaxy, Appl. Surf. Sci., 107, 107-115 (1996).
-
(1996)
Appl. Surf. Sci.
, vol.107
, pp. 107-115
-
-
Lakomaa, E.-L.1
Root, A.2
Suntola, T.3
-
42
-
-
0031150226
-
Properties of Al2O3- films deposited on silicon by atomic layer epitaxy
-
P. Ericsson, S. Bengtsson, and J. Skarp, Properties of Al2O3- films deposited on silicon by atomic layer epitaxy, Microelectron. Eng., 36, 91-94 (1997).
-
(1997)
Microelectron. Eng.
, vol.36
, pp. 91-94
-
-
Ericsson, P.1
Bengtsson, S.2
Skarp, J.3
-
43
-
-
0006092821
-
Self-limiting behavior of the growth of Al2O3 using sequential vapor pulses of TMA and H2O2
-
J. F. Fan and K. Toyoda, Self-limiting behavior of the growth of Al2O3 using sequential vapor pulses of TMA and H2O2, Appl. Surf. Sci., 60/61, 765-769 (1992).
-
(1992)
Appl. Surf. Sci.
, vol.60-61
, pp. 765-769
-
-
Fan, J.F.1
Toyoda, K.2
-
44
-
-
0001421965
-
Sequential surface chemical reaction limited growth of high quality Al2O3 dielectrics
-
G. S. Higashi, and C. G. Fleming, Sequential surface chemical reaction limited growth of high quality Al2O3 dielectrics, Appl. Phys. Lett., 55, 1963-1965 (1989).
-
(1989)
Appl. Phys. Lett.
, vol.55
, pp. 1963-1965
-
-
Higashi, G.S.1
Fleming, C.G.2
-
45
-
-
0026204631
-
AndM. Tiitta, Growth and characterization of aluminium oxide thin films deposited from various source materials by atomic layer epitaxy and chemical vapor deposition processes
-
L. Hiltunen, H. Kattelus, M. Leskelä, M. Mäkelä, L. Niinistö, E. Nykänen, P. Soininen, andM. Tiitta, Growth and characterization of aluminium oxide thin films deposited from various source materials by atomic layer epitaxy and chemical vapor deposition processes, Mater. Chem. Phys., 28, 379-388 (1991).
-
(1991)
Mater. Chem. Phys.
, vol.28
, pp. 379-388
-
-
Hiltunen, L.1
Kattelus, H.2
Leskelä, M.3
Mäkelä, M.4
Niinistö, L.5
Nykänen, E.6
Soininen, P.7
-
46
-
-
38949150792
-
Corrosion resistance of TiO2 films grown on stainless steel by atomic layer deposition
-
C. X. Shan, X. Hou, and K.-L. Choy, Corrosion resistance of TiO2 films grown on stainless steel by atomic layer deposition, Surf. Coat. Technol., 202, 2399-2402 (2008).
-
(2008)
Surf. Coat. Technol.
, vol.202
, pp. 2399-2402
-
-
Shan, C.X.1
Hou, X.2
Choy, K.-L.3
-
47
-
-
0036607582
-
Atomic layer deposition of Al2O3 thin films using trimethylaluminum and isopropyl alcohol
-
W.-S. Jeon, S. Yang, C.-s. Lee, and S.-W. Kang, Atomic Layer Deposition of Al2O3 thin films using trimethylaluminum and isopropyl alcohol, J. Electrochem. Soc., 149(6), C306-C310 (2002).
-
(2002)
J. Electrochem. Soc.
, vol.149
, Issue.6
-
-
Jeon, W.-S.1
Yang, S.2
Lee, C.-S.3
Kang, S.-W.4
-
48
-
-
0031503060
-
Atomic layer epitaxy growth of aluminum oxide thin films from a novel Al(CH3)2Cl precursor and H2O
-
K. Kukli, M. Ritala, and M. Leskela, Atomic layer epitaxy growth of aluminum oxide thin films from a novel Al(CH3)2Cl precursor and H2O, J. Vacuum Sci. Technol. A, 15(4), 2214-2218 (1997).
-
(1997)
J. Vacuum Sci. Technol. A
, vol.15
, Issue.4
, pp. 2214-2218
-
-
Kukli, K.1
Ritala, M.2
Leskela, M.3
-
49
-
-
0037166522
-
Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates
-
M. D. Groner, J. W. Elam, F. H. Fabreguette, and S. M. George, Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates, Thin Solid Films, 413, 186-197 (2002).
-
(2002)
Thin Solid Films
, vol.413
, pp. 186-197
-
-
Groner, M.D.1
Elam, J.W.2
Fabreguette, F.H.3
George, S.M.4
-
50
-
-
34047095100
-
Atomic layer deposition on electrospun polymer fibers as a direct route to Al2O3 microtubes with precise wall thickness control
-
Q. Peng, X.-Y. Sun, J. C. Spagnola, G. K. Hyde, R. J. Spontak, and G. N. Parsons, Atomic layer deposition on electrospun polymer fibers as a direct route to Al2O3 microtubes with precise wall thickness control, Nano Lett., 7(3), 719-722 (2007).
-
(2007)
Nano Lett.
, vol.7
, Issue.3
, pp. 719-722
-
-
Peng, Q.1
Sun, X.-Y.2
Spagnola, J.C.3
Hyde, G.K.4
Spontak, R.J.5
Parsons, G.N.6
-
51
-
-
17444370936
-
In situ reaction mechanism studies on the atomic layer deposition of Al2O3 from (CH3)2AlCl and water
-
R. Matero, A. Rahtu, and M. Ritala, In situ reaction mechanism studies on the atomic layer deposition of Al2O3 from (CH3)2AlCl and water, Langmuir, 21, 3498-3502 (2005).
-
(2005)
Langmuir
, vol.21
, pp. 3498-3502
-
-
Matero, R.1
Rahtu, A.2
Ritala, M.3
-
52
-
-
0033739843
-
Effect of water dose on the atomic layer deposition rate of oxide thin films
-
R. Matero, A. Rahtu, M. Ritala, M. Leskela, and T. Sajavaara, Effect of water dose on the atomic layer deposition rate of oxide thin films, Thin Solid Films, 368, 1-7 (2000).
-
(2000)
Thin Solid Films
, vol.368
, pp. 1-7
-
-
Matero, R.1
Rahtu, A.2
Ritala, M.3
Leskela, M.4
Sajavaara, T.5
-
53
-
-
84863118994
-
Atomic layer deposition Al2O3 thin films in magnetized radio frequency plasma source
-
X. Li, Q. Chen, L. Sang, L. Yang, Z. Liu, and Z. Wang, Atomic layer deposition Al2O3 thin films in magnetized radio frequency plasma source, Phys. Proced., 18, 100-106 (2011).
-
(2011)
Phys. Proced.
, vol.18
, pp. 100-106
-
-
Li, X.1
Chen, Q.2
Sang, L.3
Yang, L.4
Liu, Z.5
Wang, Z.6
-
54
-
-
13444281994
-
Atomic layer deposition of Al2O3 thin films from a 1-Methoxy-2-methyl-2- propoxide complex of aluminum and water
-
Y.-S. Min, Y. J. Cho, and C. S. Hwang, Atomic layer deposition of Al2O3 thin films from a 1-Methoxy-2-methyl-2-propoxide complex of aluminum and water, Chem. Mater., 17, 626-631 (2005).
-
(2005)
Chem. Mater.
, vol.17
, pp. 626-631
-
-
Min, Y.-S.1
Cho, Y.J.2
Hwang, C.S.3
-
55
-
-
0029264144
-
Morphology and structure of TiO2 thin films grown by atomic layer deposition
-
J. Aarik, A. Aidla, T. Uustare, and V. Sammelselg, Morphology and structure of TiO2 thin films grown by atomic layer deposition, J. Cryst. Grow., 148, 268-275 (1995).
-
(1995)
J. Cryst. Grow.
, vol.148
, pp. 268-275
-
-
Aarik, J.1
Aidla, A.2
Uustare, T.3
Sammelselg, V.4
-
56
-
-
50849144843
-
Hydrothermal crystallization of amorphous titania films deposited using low temperature atomic layer deposition
-
D. R. G. Mitchell, G. Triani, and Z. Zhang, Hydrothermal crystallization of amorphous titania films deposited using low temperature atomic layer deposition, Thin Solid Films, 516, 8414-8423 (2008).
-
(2008)
Thin Solid Films
, vol.516
, pp. 8414-8423
-
-
Mitchell, D.R.G.1
Triani, G.2
Zhang, Z.3
-
57
-
-
44349120623
-
AndM. Knez, Nanostructured pure anatase titania tubes replicated from electrospun polymer fiber templates by atomic layer deposition
-
G.-M. Kim, S.-M. Lee, G. H. Michler, H. Roggendorf, U. Gosele, andM. Knez, Nanostructured pure anatase titania tubes replicated from electrospun polymer fiber templates by atomic layer deposition, Chem. Mater., 20, 3085-3091 (2008).
-
(2008)
Chem. Mater.
, vol.20
, pp. 3085-3091
-
-
Kim, G.-M.1
Lee, S.-M.2
Michler, G.H.3
Roggendorf, H.4
Gosele, U.5
-
58
-
-
37549049753
-
Photocatalytic activity of atomic layer deposited TiO2 coatings on austenitic stainless steels and copper alloys
-
H. Kawakami, R. Ilola, L. Straka, S. Papula, J. Romu, H. Hänninen, R. Mahlberg, and M. Heikkilä, Photocatalytic activity of atomic layer deposited TiO2 coatings on austenitic stainless steels and copper alloys, J. Electrochem. Soc., 155(2), C62-C68 (2008).
-
(2008)
J. Electrochem. Soc.
, vol.155
, Issue.2
-
-
Kawakami, H.1
Ilola, R.2
Straka, L.3
Papula, S.4
Romu, J.5
Hänninen, H.6
Mahlberg, R.7
Heikkilä, M.8
-
59
-
-
33745545894
-
Infiltration and inversion of holographically defined polymer photonic crystal templates by atomic layer deposition
-
J. S. King, E. Graugnard, O. M. Roche, D. N. Sharp, J. Scrimgeour, R. G. Denning, A. J. Turberfield, and C. J. Summers, Infiltration and inversion of holographically defined polymer photonic crystal templates by atomic layer deposition, Adv. Mater., 18, 1561-1565 (2006).
-
(2006)
Adv. Mater.
, vol.18
, pp. 1561-1565
-
-
King, J.S.1
Graugnard, E.2
Roche, O.M.3
Sharp, D.N.4
Scrimgeour, J.5
Denning, R.G.6
Turberfield, A.J.7
Summers, C.J.8
-
60
-
-
0001335372
-
Atomic layer deposition of titanium oxide from TiI4 and H2O2
-
K. Kukli, M. Ritala, M. Schuisky, M. Leskelä, T. Sajavaara, J. Keinonen, T. Uustare, and A. Hårsta, Atomic layer deposition of titanium oxide from TiI4 and H2O2, Chem. Vapor Deposit., 6(6), 303-310 (2000).
-
(2000)
Chem. Vapor Deposit.
, vol.6
, Issue.6
, pp. 303-310
-
-
Kukli, K.1
Ritala, M.2
Schuisky, M.3
Leskelä, M.4
Sajavaara, T.5
Keinonen, J.6
Uustare, T.7
Hårsta, A.8
-
61
-
-
0000544108
-
Titanium oxide/aluminum oxide multilayer reflectors for "waterwindow" wavelengths
-
H. Kumagai, K. Toyoda, K. Kobayashi, M. Obara, and Y. Iimura, Titanium oxide/aluminum oxide multilayer reflectors for "waterwindow" wavelengths, Appl. Phys. Lett., 70, 2338-2340 (1997).
-
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 2338-2340
-
-
Kumagai, H.1
Toyoda, K.2
Kobayashi, K.3
Obara, M.4
Iimura, Y.5
-
62
-
-
0029343154
-
Fabrication of titanium oxide thin films by controlled growth with sequential surface chemical reactions
-
H. Kumagai, M. Matsumotob, K. Toyoda, M. Obarab, and M. Suzuki, Fabrication of titanium oxide thin films by controlled growth with sequential surface chemical reactions, Thin Solid Films, 263, 47-53 (1995).
-
(1995)
Thin Solid Films
, vol.263
, pp. 47-53
-
-
Kumagai, H.1
Matsumotob, M.2
Toyoda, K.3
Obarab, M.4
Suzuki, M.5
-
63
-
-
3142672194
-
Atomic layer deposition of photocatalytic TiO2 thin films from titanium tetramethoxide and water
-
V. Pore, A. Rahtu, M. Leskela, M. Ritala, T. Sajavaara, and J. Keinonen, Atomic layer deposition of photocatalytic TiO2 thin films from titanium tetramethoxide and water, Chem. Vapor Deposit., 10(3), 143-148 (2004).
-
(2004)
Chem. Vapor Deposit.
, vol.10
, Issue.3
, pp. 143-148
-
-
Pore, V.1
Rahtu, A.2
Leskela, M.3
Ritala, M.4
Sajavaara, T.5
Keinonen, J.6
-
64
-
-
0000646519
-
Titanium isopropoxide as a precursor in atomic layer epitaxy of titanium dioxide thin films
-
M. Ritala, M. Leskela, L. Niinisto, and P. Haussalo, Titanium isopropoxide as a precursor in atomic layer epitaxy of titanium dioxide thin films, Chem. Mater., 5, 1174-1181 (1993).
-
(1993)
Chem. Mater.
, vol.5
, pp. 1174-1181
-
-
Ritala, M.1
Leskela, M.2
Niinisto, L.3
Haussalo, P.4
-
65
-
-
0000309374
-
Growth of titanium dioxide thin films by atomic layer epitaxy
-
M. Ritala, M. Leskela, E. Nykanen, P. Soininen, and L. Niinisto, Growth of titanium dioxide thin films by atomic layer epitaxy, Thin Solid Films, 225, 288-295 (1993).
-
(1993)
Thin Solid Films
, vol.225
, pp. 288-295
-
-
Ritala, M.1
Leskela, M.2
Nykanen, E.3
Soininen, P.4
Niinisto, L.5
-
66
-
-
33751158001
-
Atomic layer epitaxy growth of titanium dioxide thin films from titanium ethoxide
-
M. Ritala, M. Leskela, and E. Rauhala, Atomic layer epitaxy growth of titanium dioxide thin films from titanium ethoxide, Chem. Mater., 6, 556-561 (1994).
-
(1994)
Chem. Mater.
, vol.6
, pp. 556-561
-
-
Ritala, M.1
Leskela, M.2
Rauhala, E.3
-
67
-
-
0035807159
-
Atomic layer deposition of thin films using O2 as oxygen source
-
M. Schuisky, J. Aarik, K. Kukli, A. Aidla, and A. Hårsta, Atomic layer deposition of thin films using O2 as oxygen source, Langmuir, 17, 5508-5512 (2001).
-
(2001)
Langmuir
, vol.17
, pp. 5508-5512
-
-
Schuisky, M.1
Aarik, J.2
Kukli, K.3
Aidla, A.4
Hårsta, A.5
-
68
-
-
0034272551
-
Atomic layer chemical vapor deposition of TiO2 low temperature epitaxy of rutile and anatase
-
M. Schuisky, A. Hårsta, A. Aidla, K. Kukli, A.-A. Kiisler, and J. Aarik, Atomic layer chemical vapor deposition of TiO2 low temperature epitaxy of rutile and anatase, J. Electrochem. Soc., 147(9), 3319-3325 (2000).
-
(2000)
J. Electrochem. Soc.
, vol.147
, Issue.9
, pp. 3319-3325
-
-
Schuisky, M.1
Hårsta, A.2
Aidla, A.3
Kukli, K.4
Kiisler, A.-A.5
Aarik, J.6
-
69
-
-
0036467262
-
Epitaxial growth of TiO2 films in a hydroxyl-free atomic layer deposition process
-
M. Schuisky, K. Kukli, J. Aarik, J. Lu, and A. Hårsta, Epitaxial growth of TiO2 films in a hydroxyl-free atomic layer deposition process, J. Cryst. Grow., 235, 293-299 (2002).
-
(2002)
J. Cryst. Grow.
, vol.235
, pp. 293-299
-
-
Schuisky, M.1
Kukli, K.2
Aarik, J.3
Lu, J.4
Hårsta, A.5
-
70
-
-
2342507202
-
Monocrystalline thin films of ZnSe and ZnO grown by atomic layer epitaxy
-
K. Kopalko, M. Godlewski, E. Guziewicz, E. ?usakowska, W. Paszkowicz, J. Z. Domaga?a, E. Dynowska, A. Szczerbakow, A. Wójcik, and M. R. Phillips, Monocrystalline thin films of ZnSe and ZnO grown by atomic layer epitaxy, Vacuum, 74, 269-272 (2004).
-
(2004)
Vacuum
, vol.74
, pp. 269-272
-
-
Kopalko, K.1
Godlewski, M.2
Guziewicz, E.3
Usakowska, E.4
Paszkowicz, W.5
Domagaa, J.Z.6
Dynowska, E.7
Szczerbakow, A.8
Wójcik, A.9
Phillips, M.R.10
-
71
-
-
1942454799
-
Atomic layer deposition of hafnium dioxide films from hafnium hydroxylamide and water
-
K. Kukli, M. Ritala, M. Leskelä, T. Sajavaara, J. Keinonen, A. C. Jones, and N. L. Tobin, Atomic layer deposition of hafnium dioxide films from hafnium hydroxylamide and water, Chem. Vapor Deposit., 10(2), 91-96 (2000).
-
(2000)
Chem. Vapor Deposit.
, vol.10
, Issue.2
, pp. 91-96
-
-
Kukli, K.1
Ritala, M.2
Leskelä, M.3
Sajavaara, T.4
Keinonen, J.5
Jones, A.C.6
Tobin, N.L.7
-
72
-
-
20444484490
-
Atomic layer deposition of hafnium oxide on germanium substrates
-
A. Delabie, R. L. Puurunen, B. Brijs, M. Caymax, T. Conard, B. Onsia, O. Richard, W. Vandervorst, C. Zhao, M. M. Heyns, M. Meuris, M. M. Viitanen, H. H. Brongersma, M. de Ridder, L. V. Goncharova, E. Garfunkel, T. Gustafsson, and W. Tsai, Atomic layer deposition of hafnium oxide on germanium substrates, J. Appl. Phys., 97, 064104/1-064104/10 (2005).
-
(2005)
J. Appl. Phys.
, vol.97
, pp. 0641041-06410410
-
-
Delabie, A.1
Puurunen, R.L.2
Brijs, B.3
Caymax, M.4
Conard, T.5
Onsia, B.6
Richard, O.7
Vandervorst, W.8
Zhao, C.9
Heyns, M.M.10
Meuris, M.11
Viitanen, M.M.12
Brongersma, H.H.13
De Ridder, M.14
Goncharova, L.V.15
Garfunkel, E.16
Gustafsson, T.17
Tsai, W.18
-
73
-
-
2642554012
-
Electrical and physical properties of HfO2 deposited via ALD using Hf(OtBu)4 and ozone atop Al2O3
-
H. S. Chang, S.-K. Baek, H. Park, H. Hwang, J. H. Oh, W. S. Shin, J. H. Yeo, K. H. Hwang, S. W. Nam, H. D. Lee, C. L. Song, D. W. Moon, and M.-H. Cho, Electrical and physical properties of HfO2 deposited via ALD using Hf(OtBu)4 and ozone atop Al2O3, Electrochem. Solid-State Lett., 7(6), F42-F44 (2004).
-
(2004)
Electrochem. Solid-State Lett.
, vol.7
, Issue.6
-
-
Chang, H.S.1
Baek, S.-K.2
Park, H.3
Hwang, H.4
Oh, J.H.5
Shin, W.S.6
Yeo, J.H.7
Hwang, K.H.8
Nam, S.W.9
Lee, H.D.10
Song, C.L.11
Moon, D.W.12
Cho, M.-H.13
-
74
-
-
0037250244
-
Atomic layer deposition of thin hafnium oxide films using a carbon free precursor
-
J. F. Conley, Y. Ono, D. J. Tweet, W. Zhuang, and R. Solanki, Atomic layer deposition of thin hafnium oxide films using a carbon free precursor, J. Appl. Phys., 93, 712-718 (2003).
-
(2003)
J. Appl. Phys.
, vol.93
, pp. 712-718
-
-
Conley, J.F.1
Ono, Y.2
Tweet, D.J.3
Zhuang, W.4
Solanki, R.5
-
75
-
-
0036806671
-
Deposition of HfO2 thin films in HfI4-based processes
-
K. Forsgren, A. Harsta, J. Aarik, A. Aidla, J. Westlinder, and J. Olsson, Deposition of HfO2 thin films in HfI4-based processes, J. Electrochem. Soc., 149(10), F139-F144 (2002).
-
(2002)
J. Electrochem. Soc.
, vol.149
, Issue.10
-
-
Forsgren, K.1
Harsta, A.2
Aarik, J.3
Aidla, A.4
Westlinder, J.5
Olsson, J.6
-
76
-
-
21244467231
-
Controlled growth of HfO2 thin films by atomic layer deposition from cyclopentadienyltype precursor and water
-
J. Niinisto, M. Putkonen, L. Niinisto, S. L. Stoll, K. Kukli, T. Sajavaara, M. Ritala, and M. Leskela, Controlled growth of HfO2 thin films by atomic layer deposition from cyclopentadienyltype precursor and water, J. Mater. Chem., 15, 2271-2275 (2005).
-
(2005)
J. Mater. Chem.
, vol.15
, pp. 2271-2275
-
-
Niinisto, J.1
Putkonen, M.2
Niinisto, L.3
Stoll, S.L.4
Kukli, K.5
Sajavaara, T.6
Ritala, M.7
Leskela, M.8
-
77
-
-
0242496382
-
Electron spin resonance observation of trapped electron centers in atomic-layerdeposited hafnium oxide on Si
-
A. Y. Kang, P. M. Lenahan, and J. F. Conley, Electron spin resonance observation of trapped electron centers in atomic-layerdeposited hafnium oxide on Si, Appl. Phys. Lett., 83, 3407-3409 (2003).
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 3407-3409
-
-
Kang, A.Y.1
Lenahan, P.M.2
Conley, J.F.3
-
78
-
-
1942420039
-
Atomic layer deposition of hafnium dioxide films using hafnium Bis(2-butanolate)bis(1-methoxy-2- methyl-2-propanolate) and water
-
K. Kukli, M. Ritala, M. Leskela, T. Sajavaara, J. Keinonen, A. C. Jones, and J. L. Roberts, Atomic layer deposition of hafnium dioxide films using hafnium Bis(2-butanolate)bis(1-methoxy-2- methyl-2-propanolate) and water, Chem. Vapor Deposit., 9(6), 315-320 (2003).
-
(2003)
Chem. Vapor Deposit.
, vol.9
, Issue.6
, pp. 315-320
-
-
Kukli, K.1
Ritala, M.2
Leskela, M.3
Sajavaara, T.4
Keinonen, J.5
Jones, A.C.6
Roberts, J.L.7
-
79
-
-
0037009694
-
Comparison of hafnium oxide films grown by atomic layer deposition from iodide and chloride precursors
-
K. Kukli, M. Ritala, T. Sajavaara, J. Keinonen, and M. Leskela, Comparison of hafnium oxide films grown by atomic layer deposition from iodide and chloride precursors, Thin Solid Films, 416, 72-79 (2002).
-
(2002)
Thin Solid Films
, vol.416
, pp. 72-79
-
-
Kukli, K.1
Ritala, M.2
Sajavaara, T.3
Keinonen, J.4
Leskela, M.5
-
80
-
-
25144457034
-
Atomic layer deposition of hafnium dioxide thin films from hafnium tetrakis(dimethylamide) and water
-
K. Kukli, T. Pilvi, M. Ritala, T. Sajavaara, J. Lu, and M. Leskela, Atomic layer deposition of hafnium dioxide thin films from hafnium tetrakis(dimethylamide) and water, Thin Solid Films, 491, 328-338 (2005).
-
(2005)
Thin Solid Films
, vol.491
, pp. 328-338
-
-
Kukli, K.1
Pilvi, T.2
Ritala, M.3
Sajavaara, T.4
Lu, J.5
Leskela, M.6
-
81
-
-
0037461228
-
Atomic layer deposition of hafnium dioxide films from 1-Methoxy-2-methyl-2-propanolate complex of hafnium
-
K. Kukli, M. Ritala, M. Leskela, T. Sajavaara, J. Keinonen, A. C. Jones, and J. L. Roberts, Atomic layer deposition of hafnium dioxide films from 1-Methoxy-2-methyl-2-propanolate complex of hafnium, Chem. Mater., 15, 1722-1727 (2003).
-
(2003)
Chem. Mater.
, vol.15
, pp. 1722-1727
-
-
Kukli, K.1
Ritala, M.2
Leskela, M.3
Sajavaara, T.4
Keinonen, J.5
Jones, A.C.6
Roberts, J.L.7
-
82
-
-
0000983812
-
Atomic layer deposition of hafnium dioxide films from hafnium tetrakis(ethylmethylamide) and water
-
K. Kukli, M. Ritala, T. Sajavaara, J. Keinonen, and M. Leskela, Atomic layer deposition of hafnium dioxide films from hafnium tetrakis(ethylmethylamide) and water, Chem. Vapor Deposit., 8(5), 199-204 (2002).
-
(2002)
Chem. Vapor Deposit.
, vol.8
, Issue.5
, pp. 199-204
-
-
Kukli, K.1
Ritala, M.2
Sajavaara, T.3
Keinonen, J.4
Leskela, M.5
-
83
-
-
0037113039
-
Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen
-
K. Kukli, M. Ritala, J. Sundqvist, J. Arik, J. Lu, T. Sajavaara, M. Leskela, and A. Harsta, Properties of hafnium oxide films grown by atomic layer deposition from hafnium tetraiodide and oxygen, J. Appl. Phys., 92, 5698-5703 (2002).
-
(2002)
J. Appl. Phys.
, vol.92
, pp. 5698-5703
-
-
Kukli, K.1
Ritala, M.2
Sundqvist, J.3
Arik, J.4
Lu, J.5
Sajavaara, T.6
Leskela, M.7
Harsta, A.8
-
84
-
-
21244473070
-
Deposition of HfO2 Gd 2 O3 and PrOx by liquid injection ALD techniques
-
R. J. Potter, P. R. Chalker, T. D. Manning, H. C. Aspinall, Y. F. Loo, A. C. Jones, L. M. Smith, G. W. Critchlow, and M. Schumacher, Deposition of HfO2, Gd2 O3 and PrOx by liquid injection ALD techniques, Chem. Vapor Deposit., 11(3), 159-169 (2005).
-
(2005)
Chem. Vapor Deposit.
, vol.11
, Issue.3
, pp. 159-169
-
-
Potter, R.J.1
Chalker, P.R.2
Manning, T.D.3
Aspinall, H.C.4
Loo, Y.F.5
Jones, A.C.6
Smith, L.M.7
Critchlow, G.W.8
Schumacher, M.9
-
85
-
-
0028517695
-
Development of crystallinity and morphology in hafnium dioxide thin films grown by atomic layer epitaxy
-
M. Ritala, M. Leskela, L. Niinisto, T. Prohaska, G. Friedbacher, and M. Grasserbauer, Development of crystallinity and morphology in hafnium dioxide thin films grown by atomic layer epitaxy, Thin Solid Films, 250, 72-80 (1994).
-
(1994)
Thin Solid Films
, vol.250
, pp. 72-80
-
-
Ritala, M.1
Leskela, M.2
Niinisto, L.3
Prohaska, T.4
Friedbacher, G.5
Grasserbauer, M.6
-
86
-
-
0037416553
-
Atomic layer deposition of polycrystalline HfO2 films by the HfI4-O2 precursor combination
-
J. Sundqvist, A. Hårsta, J. Aarik, K. Kukli, and A. Aidla, Atomic layer deposition of polycrystalline HfO2 films by the HfI4-O2 precursor combination, Thin Solid Films, 427, 147-151 (2003).
-
(2003)
Thin Solid Films
, vol.427
, pp. 147-151
-
-
Sundqvist, J.1
Hårsta, A.2
Aarik, J.3
Kukli, K.4
Aidla, A.5
-
87
-
-
34247131199
-
XPS and AFM investigation of hafnium dioxide thin films prepared by atomic layer deposition on silicon
-
V. Sammelselg, R. Rammula, J. Aarik, A. Kikas, K. Kooser, and T. Kaambre, XPS and AFM investigation of hafnium dioxide thin films prepared by atomic layer deposition on silicon, J. Electron Spectrosc. Rel. Phenom., 156-158, 150-154 (2007).
-
(2007)
J. Electron Spectrosc. Rel. Phenom.
, vol.156-158
, pp. 150-154
-
-
Sammelselg, V.1
Rammula, R.2
Aarik, J.3
Kikas, A.4
Kooser, K.5
Kaambre, T.6
-
88
-
-
0036799255
-
Atomic layer deposition of hafnium and zirconium oxides using metal amide precursors
-
D. M. Hausmann, E. Kim, J. Becker, and R. G. Gordon, Atomic layer deposition of hafnium and zirconium oxides using metal amide precursors, Chem. Mater., 14, 4350-4358 (2002).
-
(2002)
Chem. Mater.
, vol.14
, pp. 4350-4358
-
-
Hausmann, D.M.1
Kim, E.2
Becker, J.3
Gordon, R.G.4
-
89
-
-
0037012516
-
Growth kinetics and structure formation of ZrO2 thin films in chloride based atomic layer deposition process
-
J. Aarik, A. Aidla, H. Mandar, T. Uustare, and V. Sammelselg, Growth kinetics and structure formation of ZrO2 thin films in chloride based atomic layer deposition process, Thin Solid Films, 408, 97-103 (2002).
-
(2002)
Thin Solid Films
, vol.408
, pp. 97-103
-
-
Aarik, J.1
Aidla, A.2
Mandar, H.3
Uustare, T.4
Sammelselg, V.5
-
90
-
-
0000127529
-
Dielectric properties of zirconium oxide grown by atomic layer deposition from iodide precursor
-
K. Kukli, K. Forsgren, M. Ritala, M. Leskela, J. Aarik, and A. Harsta, Dielectric properties of zirconium oxide grown by atomic layer deposition from iodide precursor, J. Electrochem. Soc., 148(12), F227-F232 (2001).
-
(2001)
J. Electrochem. Soc.
, vol.148
, Issue.12
-
-
Kukli, K.1
Forsgren, K.2
Ritala, M.3
Leskela, M.4
Aarik, J.5
Harsta, A.6
-
91
-
-
0036574786
-
Influence of thickness and growth temperature on the properties of zirconium oxide films grown by atomic layer deposition on silicon
-
K. Kukli, M. Ritala, T. Uustare, J. Aarik, K. Forsgren, T. Sajavaara, M. Leskela, and A. Harsta, Influence of thickness and growth temperature on the properties of zirconium oxide films grown by atomic layer deposition on silicon, Thin Solid Films, 410, 53-60 (2002).
-
(2002)
Thin Solid Films
, vol.410
, pp. 53-60
-
-
Kukli, K.1
Ritala, M.2
Uustare, T.3
Aarik, J.4
Forsgren, K.5
Sajavaara, T.6
Leskela, M.7
Harsta, A.8
-
92
-
-
0037103549
-
Influence of growth temperature on properties of zirconium dioxide films grown by atomic layer deposition
-
K. Kukli, M. Ritala, J. Aarik, T. Uustare, and M. Leskelä, Influence of growth temperature on properties of zirconium dioxide films grown by atomic layer deposition, J. Appl. Phys., 92, 1833-1840 (2002).
-
(2002)
J. Appl. Phys.
, vol.92
, pp. 1833-1840
-
-
Kukli, K.1
Ritala, M.2
Aarik, J.3
Uustare, T.4
Leskelä, M.5
-
93
-
-
0035452393
-
Atomic layer deposition of zirconium oxide from zirconium tetraiodide water and hydrogen peroxide
-
K. Kukli, K. Forsgren, J. Aarik, T. Uustare, A. Aidla, A. Niskanen, M. Ritala, M. Leskela, and A. Harsta, Atomic layer deposition of zirconium oxide from zirconium tetraiodide, water and hydrogen peroxide, J. Cryst. Grow., 231, 262-272 (2001).
-
(2001)
J. Cryst. Grow.
, vol.231
, pp. 262-272
-
-
Kukli, K.1
Forsgren, K.2
Aarik, J.3
Uustare, T.4
Aidla, A.5
Niskanen, A.6
Ritala, M.7
Leskela, M.8
Harsta, A.9
-
94
-
-
6344235714
-
Atomic layer deposition of ZrO2 thin films using dichlorobis[bis- (trimethylsilyl)amido]zirconium and water
-
W.-H. Nam and S.-W. Rhee, Atomic layer deposition of ZrO2 thin films using dichlorobis[bis-(trimethylsilyl)amido]zirconium and water, Chem. Vapor Deposit., 10(4), 201-205 (2004).
-
(2004)
Chem. Vapor Deposit.
, vol.10
, Issue.4
, pp. 201-205
-
-
Nam, W.-H.1
Rhee, S.-W.2
-
95
-
-
0942281145
-
ZrO2 Thin films grown on silicon substrates by atomic layer deposition with Cp2Zr(CH3)2 and water as precursors
-
M. Putkonen, J. Niinisto, K. Kukli, T. Sajavaara, M. Karppinen, H. Yamauchi, and L. Niinisto, ZrO2 Thin films grown on silicon substrates by atomic layer deposition with Cp2Zr(CH3)2 and water as precursors, Chem. Vapor Deposit., 9(4), 207-212 (2003).
-
(2003)
Chem. Vapor Deposit.
, vol.9
, Issue.4
, pp. 207-212
-
-
Putkonen, M.1
Niinisto, J.2
Kukli, K.3
Sajavaara, T.4
Karppinen, M.5
Yamauchi, H.6
Niinisto, L.7
-
96
-
-
0035655349
-
Zirconia thin films by atomic layer epitaxy. A comparative study on the use of novel precursors with ozone
-
M. Putkonen and L. Niinisto, Zirconia thin films by atomic layer epitaxy. A comparative study on the use of novel precursors with ozone, J. Mater. Chem., 11, 3141-3147 (2001).
-
(2001)
J. Mater. Chem.
, vol.11
, pp. 3141-3147
-
-
Putkonen, M.1
Niinisto, L.2
-
97
-
-
0028758883
-
Zirconium dioxide thin films deposited by ALE using zirconium tetrachloride as precursor
-
M. Ritala andM. Leskela, Zirconium dioxide thin films deposited by ALE using zirconium tetrachloride as precursor, Appl. Surf. Sci., 75, 333-340 (1994).
-
(1994)
Appl. Surf. Sci.
, vol.75
, pp. 333-340
-
-
Ritala, M.1
Leskela, M.2
-
98
-
-
67349276172
-
Comparison between the electrical properties of atomic layer deposited thin ZrO2 films processed from cyclopentadienyl precursors
-
S. Duenas, H. Castán, H. Garcá, A. Gómez, L. Bailón, K. Kukli, J. Niinistö, M. Ritala, and M. Leskelä, Comparison between the electrical properties of atomic layer deposited thin ZrO2 films processed from cyclopentadienyl precursors, Microelectron. Eng., 86, 1689-1691 (2009).
-
(2009)
Microelectron. Eng.
, vol.86
, pp. 1689-1691
-
-
Duenas, S.1
Castán, H.2
Garcá, H.3
Gómez, A.4
Bailón, L.5
Kukli, K.6
Niinistö, J.7
Ritala, M.8
Leskelä, M.9
-
99
-
-
0028761995
-
Atomic layer controlled deposition of SiO2 and Al2O3 using ABAB . . . binary reaction sequence chemistry
-
S. M. George, O. Sneh, A. C. Dillon, M. L. Wise, A. W. Ott, L. A. Okada, and J. D. Way, Atomic layer controlled deposition of SiO2 and Al2O3 using ABAB . . . binary reaction sequence chemistry, Appl. Surf. Sci., 82/83, 460-467 (1994).
-
(1994)
Appl. Surf. Sci.
, vol.82-83
, pp. 460-467
-
-
George, S.M.1
Sneh, O.2
Dillon, A.C.3
Wise, M.L.4
Ott, A.W.5
Okada, L.A.6
Way, J.D.7
-
100
-
-
0034511163
-
Atomic layer deposition of SiO2 films on BN particles using sequential surface reactions
-
J. D. Ferguson, A. W. Weimer, and S. M. George, Atomic layer deposition of SiO2 films on BN particles using sequential surface reactions, Chem. Mater., 12, 3472-3480 (2000).
-
(2000)
Chem. Mater.
, vol.12
, pp. 3472-3480
-
-
Ferguson, J.D.1
Weimer, A.W.2
George, S.M.3
-
101
-
-
13844255279
-
Low-temperature growth of SiO2 films by plasma-enhanced atomic layer deposition
-
J. W. Lim, S. J. Yun, and J. H. Lee, Low-temperature growth of SiO2 films by plasma-enhanced atomic layer deposition, ETRI J., 27(1), 118-121 (2005).
-
(2005)
ETRI J.
, vol.27
, Issue.1
, pp. 118-121
-
-
Lim, J.W.1
Yun, S.J.2
Lee, J.H.3
-
102
-
-
0033909031
-
Atomic layer deposition of SiO2 at room temperature using NH3-catalyzed sequential surface reactions
-
J. W. Klaus and S. M. George, Atomic layer deposition of SiO2 at room temperature using NH3-catalyzed sequential surface reactions, Surf. Sci., 447, 81-90 (2000).
-
(2000)
Surf. Sci.
, vol.447
, pp. 81-90
-
-
Klaus, J.W.1
George, S.M.2
-
103
-
-
0000763519
-
Atomic layer controlled growth of SiO2 films using binary reaction sequence chemistry
-
J. W. Klaus, A. W. Ott, J. M. Johnson, and S. M. George, Atomic layer controlled growth of SiO2 films using binary reaction sequence chemistry, Appl. Phys. Lett., 70, 1092-1094 (1997).
-
(1997)
Appl. Phys. Lett.
, vol.70
, pp. 1092-1094
-
-
Klaus, J.W.1
Ott, A.W.2
Johnson, J.M.3
George, S.M.4
-
104
-
-
0031465733
-
Growth of SiO2 at room temperature with the use of catalyzed sequential half-reactions
-
J. W. Klaus, O. Sneh, and S. M. George, Growth of SiO2 at room temperature with the use of catalyzed sequential half-reactions, Science, 278, 1934-1936 (1997).
-
(1997)
Science
, vol.278
, pp. 1934-1936
-
-
Klaus, J.W.1
Sneh, O.2
George, S.M.3
-
105
-
-
84977880451
-
New substances for atomic-layer deposition of silicon dioxide
-
S. Morishita, W. Gasser, K. Usami, and M. Matsumura, New substances for atomic-layer deposition of silicon dioxide, J. Non- Crystal. Sol., 187, 66-69 (1995).
-
(1995)
J. Non- Crystal. Sol.
, vol.187
, pp. 66-69
-
-
Morishita, S.1
Gasser, W.2
Usami, K.3
Matsumura, M.4
-
106
-
-
77955160100
-
High-quality lowtemperature silicon oxide by plasma-enhanced atomic layer deposition using ametal-organic silicon precursor and oxygen radical
-
S.-J. Won, S. Suh, M. S. Huh, and H. J. Kim, High-quality lowtemperature silicon oxide by plasma-enhanced atomic layer deposition using ametal-organic silicon precursor and oxygen radical, IEEE Electron Dev. Lett., 31(8), 857-859 (2010).
-
(2010)
IEEE Electron Dev. Lett.
, vol.31
, Issue.8
, pp. 857-859
-
-
Won, S.-J.1
Suh, S.2
Huh, M.S.3
Kim, H.J.4
-
107
-
-
0029343278
-
Atomic layer growth of SiO2 on Si(100) using SiCl4 and H2O in a binary reaction sequence
-
O. Sneh, M. L. Wise, A. W. Ott, L. A. Okada, and S. M. George, Atomic layer growth of SiO2 on Si(100) using SiCl4 and H2O in a binary reaction sequence, Surf. Sci., 334, 135-152 (1995).
-
(1995)
Surf. Sci.
, vol.334
, pp. 135-152
-
-
Sneh, O.1
Wise, M.L.2
Ott, A.W.3
Okada, L.A.4
George, S.M.5
-
108
-
-
25144434933
-
SiO2 film growth at low temperatures by catalyzed atomic layer deposition in a viscous flow reactor
-
Y. Du, X. Du, and S. M. George, SiO2 film growth at low temperatures by catalyzed atomic layer deposition in a viscous flow reactor, Thin Solid Films, 491, 43-53 (2005).
-
(2005)
Thin Solid Films
, vol.491
, pp. 43-53
-
-
Du, Y.1
Du, X.2
George, S.M.3
-
109
-
-
81355138993
-
Electrochemical and timeof- flight secondary ion mass spectrometry analysis of ultra-thin metal oxide (Al2O3 and Ta2O5) coatings deposited by atomic layer deposition on stainless steel
-
B. Dáz, J. Swiatowska, V. Maurice, A. Seyeux, B. Normand, E. Härkönen, M. Ritala, and P. Marcus, Electrochemical and timeof- flight secondary ion mass spectrometry analysis of ultra-thin metal oxide (Al2O3 and Ta2O5) coatings deposited by atomic layer deposition on stainless steel, Electrochimica Acta, 56, 10516-10523 (2011).
-
(2011)
Electrochimica Acta
, vol.56
, pp. 10516-10523
-
-
Dáz, B.1
Swiatowska, J.2
Maurice, V.3
Seyeux, A.4
Normand, B.5
Härkönen, E.6
Ritala, M.7
Marcus, P.8
-
110
-
-
0141642128
-
Highly conformal atomic layer deposition of tantalum oxide using alkylamide precursors
-
D. M. Hausmann, P. de Rouffignac, A. Smith, R. Gordon, and D. Monsma, Highly conformal atomic layer deposition of tantalum oxide using alkylamide precursors, Thin Solid Films, 443, 1-4 (2003).
-
(2003)
Thin Solid Films
, vol.443
, pp. 1-4
-
-
Hausmann, D.M.1
De Rouffignac, P.2
Smith, A.3
Gordon, R.4
Monsma, D.5
-
111
-
-
0030380571
-
Mechanisms of suboxide growth and etching in atomic layer deposition of tantalum oxide from TaCl5 and H2O
-
J. Aarik, K. Kukli, A. Aidla, and L. Pung, Mechanisms of suboxide growth and etching in atomic layer deposition of tantalum oxide from TaCl5 and H2O, Appl. Surf. Sci., 103, 331-341 (1996).
-
(1996)
Appl. Surf. Sci.
, vol.103
, pp. 331-341
-
-
Aarik, J.1
Kukli, K.2
Aidla, A.3
Pung, L.4
-
112
-
-
0028547046
-
Deposition and etching of tantalum oxide films in atomic layer epitaxy process
-
J. Aarik, A. Aidla, K. Kukli, and T. Uustare, Deposition and etching of tantalum oxide films in atomic layer epitaxy process, J. Cryst. Grow., 144, 116-119 (1994).
-
(1994)
J. Cryst. Grow.
, vol.144
, pp. 116-119
-
-
Aarik, J.1
Aidla, A.2
Kukli, K.3
Uustare, T.4
-
113
-
-
0000097220
-
Properties of tantalum oxide thin films grown by atomic layer deposition
-
K. Kukli, J. Aarik, A. Aidla, O. Kohana, T. Uustare, and V. Sammelselg, Properties of tantalum oxide thin films grown by atomic layer deposition, Thin Solid Films, 260, 135-142 (1995).
-
(1995)
Thin Solid Films
, vol.260
, pp. 135-142
-
-
Kukli, K.1
Aarik, J.2
Aidla, A.3
Kohana, O.4
Uustare, T.5
Sammelselg, V.6
-
114
-
-
0035115268
-
Atomic layer deposition of tantalum oxide thin films from iodide precursor
-
K. Kukli, J. Aarik, A. Aidla, K. Forsgren, J. Sundqvist, A. Hårsta, T. Uustare, H. Mandar, andA.-A. Kiisler, Atomic layer deposition of tantalum oxide thin films from iodide precursor, Chem. Mater., 13, 122-128 (2001).
-
(2001)
Chem. Mater.
, vol.13
, pp. 122-128
-
-
Kukli, K.1
Aarik, J.2
Aidla, A.3
Forsgren, K.4
Sundqvist, J.5
Hårsta, A.6
Uustare, T.7
Mandar, H.8
Kiisler, A.-A.9
-
115
-
-
0033808389
-
Atomic layer deposition and chemical vapor deposition of tantalum oxide by successive and simultaneous pulsing of tantalum ethoxide and tantalum chloride
-
K. Kukli, M. Ritala, and M. Leskela, Atomic layer deposition and chemical vapor deposition of tantalum oxide by successive and simultaneous pulsing of tantalum ethoxide and tantalum chloride, Chem. Mater., 12, 1914-1920 (2000).
-
(2000)
Chem. Mater.
, vol.12
, pp. 1914-1920
-
-
Kukli, K.1
Ritala, M.2
Leskela, M.3
-
116
-
-
0029310169
-
Atomic layer epitaxy growth of tantalum oxide thin films from Ta(OC2H5)5 and H2O
-
K. Kukli, M. Ritala, and M. Leskela, Atomic layer epitaxy growth of tantalum oxide thin films from Ta(OC2H5)5 and H2O, J. Electrochem. Soc., 142(5), 1670-1675 (1995).
-
(1995)
J. Electrochem. Soc.
, vol.142
, Issue.5
, pp. 1670-1675
-
-
Kukli, K.1
Ritala, M.2
Leskela, M.3
-
117
-
-
0034188662
-
Influence of atomic layer deposition parameters on the phase content of Ta2O5 films
-
K. Kukli, M. Ritala, R. Matero, and M. Leskela, Influence of atomic layer deposition parameters on the phase content of Ta2O5 films, J. Cryst. Grow., 212, 459-468 (2000).
-
(2000)
J. Cryst. Grow.
, vol.212
, pp. 459-468
-
-
Kukli, K.1
Ritala, M.2
Matero, R.3
Leskela, M.4
-
118
-
-
0000955853
-
Characterization of surface exchange reactions used to grow compound films
-
M. Pessa, R. Mäkelä, and T. Suntola, Characterization of surface exchange reactions used to grow compound films, Appl. Phys. Lett., 38, 131-132 (1981).
-
(1981)
Appl. Phys. Lett.
, vol.38
, pp. 131-132
-
-
Pessa, M.1
Mäkelä, R.2
Suntola, T.3
-
119
-
-
10644221993
-
Atomic layer deposition of Ta2O5 using the TaI5 and O2 precursor combination
-
J. Sundqvist, H. Högberg, and A. Hårsta, Atomic Layer Deposition of Ta2O5 Using the TaI5 and O2 Precursor Combination, Chem. Vapor Deposit., 9(5), 245-248 (2003).
-
(2003)
Chem. Vapor Deposit.
, vol.9
, Issue.5
, pp. 245-248
-
-
Sundqvist, J.1
Högberg, H.2
Hårsta, A.3
-
120
-
-
0001023217
-
Properties of [Mg2(thd)4] as a precursor for atomic layer deposition of MgO thin films and crystal structures of [Mg2(thd)4] and [Mg(thd)2(EtOH)2]
-
T. Hatanpaa, J. Ihanus, J. Kansikas, I. Mutikainen, M. Ritala, and M. Leskela, Properties of [Mg2(thd)4] as a precursor for atomic layer deposition of MgO thin films and crystal structures of [Mg2(thd)4] and [Mg(thd)2(EtOH)2], Chem. Mater., 11, 1846-1852 (1999).
-
(1999)
Chem. Mater.
, vol.11
, pp. 1846-1852
-
-
Hatanpaa, T.1
Ihanus, J.2
Kansikas, J.3
Mutikainen, I.4
Ritala, M.5
Leskela, M.6
-
121
-
-
0000972585
-
Temperature dependence of the growth orientation of atomic layer growth MgO
-
R. Huang and A. H. Kitai, Temperature dependence of the growth orientation of atomic layer growth MgO, Appl. Phys. Lett., 61, 1450-1452 (1992).
-
(1992)
Appl. Phys. Lett.
, vol.61
, pp. 1450-1452
-
-
Huang, R.1
Kitai, A.H.2
-
122
-
-
0032732275
-
Surface-controlled growth of magnesium oxide thin films by atomic layer epitaxy
-
M. Putkonen, L.-S. Johansson, E. Rauhala, and L. Niinisto, Surface-controlled growth of magnesium oxide thin films by atomic layer epitaxy, J. Mater. Chem., 9, 2449-2452 (1999).
-
(1999)
J. Mater. Chem.
, vol.9
, pp. 2449-2452
-
-
Putkonen, M.1
Johansson, L.-S.2
Rauhala, E.3
Niinisto, L.4
-
123
-
-
0033847492
-
Enhanced growth rate in atomic layer epitaxy deposition ofmagnesium oxide thin films
-
M. Putkonen, T. Sajavaara, and L. Niinisto, Enhanced growth rate in atomic layer epitaxy deposition ofmagnesium oxide thin films, J. Mater. Chem., 10, 1857-1861 (2000).
-
(2000)
J. Mater. Chem.
, vol.10
, pp. 1857-1861
-
-
Putkonen, M.1
Sajavaara, T.2
Niinisto, L.3
-
124
-
-
0035967555
-
Atomic layer deposition of zinc oxide and indium sulfide layers for Cu(In Ga)Se 2 thin-film solar cells
-
E. B. Yousfi, B. Weinberger, F. Donsanti, P. Cowache, and D. Lincot, Atomic layer deposition of zinc oxide and indium sulfide layers for Cu(In, Ga)Se2 thin-film solar cells, Thin Solid Films, 387, 29-32 (2001).
-
(2001)
Thin Solid Films
, vol.387
, pp. 29-32
-
-
Yousfi, E.B.1
Weinberger, B.2
Donsanti, F.3
Cowache, P.4
Lincot, D.5
-
125
-
-
21744442608
-
Surface chemistry and infrared absorbance changes during ZnO atomic layer deposition on ZrO2 and BaTiO3 particles
-
J. D. Ferguson, A. W. Weimer, and S. M. George, Surface chemistry and infrared absorbance changes during ZnO atomic layer deposition on ZrO2 and BaTiO3 particles, J. Vacuum Sci. Technol. A, 23, 118-125 (2005).
-
(2005)
J. Vacuum Sci. Technol. A
, vol.23
, pp. 118-125
-
-
Ferguson, J.D.1
Weimer, A.W.2
George, S.M.3
-
126
-
-
79956047209
-
In situ resistivity measurements during the atomic layer deposition of ZnO and W thin films
-
M. Schuisky, J. W. Elam, and S. M. George, In situ resistivity measurements during the atomic layer deposition of ZnO and W thin films, Appl. Phys. Lett., 81, 180-182 (2002).
-
(2002)
Appl. Phys. Lett.
, vol.81
, pp. 180-182
-
-
Schuisky, M.1
Elam, J.W.2
George, S.M.3
-
127
-
-
38649099760
-
ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor
-
S. J. Lim, S. Kwon, and H. Kim, ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor, Thin Solid Films, 516, 1523-1528 (2008).
-
(2008)
Thin Solid Films
, vol.516
, pp. 1523-1528
-
-
Lim, S.J.1
Kwon, S.2
Kim, H.3
-
128
-
-
20844459639
-
Fabrication of inverted opal ZnO photonic crystals by atomic layer deposition
-
M. Scharrer, X. Wu, A. Yamilov, H. Cao, and R. P. Chang, Fabrication of inverted opal ZnO photonic crystals by atomic layer deposition, Appl. Phys. Lett., 86, 151113/1-151113/3 (2005).
-
(2005)
Appl. Phys. Lett.
, vol.86
, pp. 1511131-1511133
-
-
Scharrer, M.1
Wu, X.2
Yamilov, A.3
Cao, H.4
Chang, R.P.5
-
129
-
-
0028761966
-
Atomic layer epitaxy growth of doped zinc oxide thin films from organometals
-
V. Lujala, J. Skarp, M. Tammenmaa, and T. Suntola, Atomic layer epitaxy growth of doped zinc oxide thin films from organometals, Appl. Surf. Sci., 82/83, 34-40 (1994).
-
(1994)
Appl. Surf. Sci.
, vol.82-83
, pp. 34-40
-
-
Lujala, V.1
Skarp, J.2
Tammenmaa, M.3
Suntola, T.4
-
130
-
-
15344349178
-
Neodymium oxide and neodymium aluminate thin films by atomic layer deposition
-
A. Kosola, J. Paivasaari, M. Putkonen, and L. Niinisto, Neodymium oxide and neodymium aluminate thin films by atomic layer deposition, Thin Solid Films, 479, 152-159 (2005).
-
(2005)
Thin Solid Films
, vol.479
, pp. 152-159
-
-
Kosola, A.1
Paivasaari, J.2
Putkonen, M.3
Niinisto, L.4
-
131
-
-
0031701182
-
Niobium oxide thin films grown by atomic layer epitaxy
-
K. Kukli, M. Ritala, M. Leskelä, and R. Lappalainen, Niobium oxide thin films grown by atomic layer epitaxy, Chem. Vapor Deposit., 4(1), 29-34 (1998).
-
(1998)
Chem. Vapor Deposit.
, vol.4
, Issue.1
, pp. 29-34
-
-
Kukli, K.1
Ritala, M.2
Leskelä, M.3
Lappalainen, R.4
-
132
-
-
4043099571
-
Atomic-layer deposition of Lu2O3
-
G. Scarel, E. Bonera, C. Wiemer, G. Tallarida, S. Spiga, M. Fanciulli, I. L. Fedushkin, H. Schumann, Y. Lebedinskii, and A. Zenkevich, Atomic-layer deposition of Lu2O3, Appl. Phys. Lett., 85, 630-632 (2004).
-
(2004)
Appl. Phys. Lett.
, vol.85
, pp. 630-632
-
-
Scarel, G.1
Bonera, E.2
Wiemer, C.3
Tallarida, G.4
Spiga, S.5
Fanciulli, M.6
Fedushkin, I.L.7
Schumann, H.8
Lebedinskii, Y.9
Zenkevich, A.10
-
133
-
-
0035897237
-
Formation and stability of lanthanum oxide thin films deposited from ?-diketonate precursor
-
M. Nieminen, M. Putkonen, and L. Niinisto, Formation and stability of lanthanum oxide thin films deposited from ?-diketonate precursor, Appl. Surf. Sci., 174, 155-165 (2001).
-
(2001)
Appl. Surf. Sci.
, vol.174
, pp. 155-165
-
-
Nieminen, M.1
Putkonen, M.2
Niinisto, L.3
-
134
-
-
33747018260
-
5 nm thick lanthanum oxide thin films grown on Si(100) by atomic layer deposition: The effect of post-annealing on the electrical properties
-
S. J. Jo, J. S. Ha, N. K. Park, D. K. Kang, and B.-H. Kim, 5 nm thick lanthanum oxide thin films grown on Si(100) by atomic layer deposition: the effect of post-annealing on the electrical properties, Thin Solid Films, 513, 253-257 (2006).
-
(2006)
Thin Solid Films
, vol.513
, pp. 253-257
-
-
Jo, S.J.1
Ha, J.S.2
Park, N.K.3
Kang, D.K.4
Kim, B.-H.5
-
135
-
-
54849412779
-
Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric
-
M. Roeckerath, T. Heeg, J. M. J. Lopes, J. Schubert, S. Mantl, A. Besmehn, P. Myllymäki, and L. Niinistö, Characterization of lanthanum lutetium oxide thin films grown by atomic layer deposition as an alternative gate dielectric, Thin Solid Films, 517, 201-203 (2008).
-
(2008)
Thin Solid Films
, vol.517
, pp. 201-203
-
-
Roeckerath, M.1
Heeg, T.2
Lopes, J.M.J.3
Schubert, J.4
Mantl, S.5
Besmehn, A.6
Myllymäki, P.7
Niinistö, L.8
-
136
-
-
0001074791
-
Deposition of LaNiO3 thin films in an atomic layer epitaxy reactor
-
H. Seim, H. Molsa, M. Nieminen, H. Fjellvag, and L. Niinisto, Deposition of LaNiO3 thin films in an atomic layer epitaxy reactor, J. Mater. Chem., 7(3), 449-454 (1997).
-
(1997)
J. Mater. Chem.
, vol.7
, Issue.3
, pp. 449-454
-
-
Seim, H.1
Molsa, H.2
Nieminen, M.3
Fjellvag, H.4
Niinisto, L.5
-
137
-
-
27144465219
-
Gadolinium oxide thin films by atomic layer deposition
-
J. Niinisto, N. Petrova, M. Putkonen, L. Niinisto, K. Arstila, and T. Sajavaara, Gadolinium oxide thin films by atomic layer deposition, J. Cryst. Grow., 285, 191-200 (2005).
-
(2005)
J. Cryst. Grow.
, vol.285
, pp. 191-200
-
-
Niinisto, J.1
Petrova, N.2
Putkonen, M.3
Niinisto, L.4
Arstila, K.5
Sajavaara, T.6
-
138
-
-
0036273160
-
Cerium dioxide buffer layers at low temperature by atomic layer deposition
-
J. Päiväsaari, M. Putkonen, and L. Niinisto, Cerium dioxide buffer layers at low temperature by atomic layer deposition, J. Mater. Chem., 12, 1828-1832 (2002).
-
(2002)
J. Mater. Chem.
, vol.12
, pp. 1828-1832
-
-
Päiväsaari, J.1
Putkonen, M.2
Niinisto, L.3
-
139
-
-
2942585147
-
Atomic layer deposition of rare earth oxides: Erbium oxide thin films from. ?-diketonate and ozone precursors
-
J. Päiväsaari, M. Putkonen, T. Sajavaara, and L. Niinistö, Atomic layer deposition of rare earth oxides: erbium oxide thin films from ?-diketonate and ozone precursors, J. Alloys Comp., 374, 124-128 (2004).
-
(2004)
J. Alloys Comp.
, vol.374
, pp. 124-128
-
-
Päiväsaari, J.1
Putkonen, M.2
Sajavaara, T.3
Niinistö, L.4
-
140
-
-
58149194776
-
Atomic layer deposition of iron(III) oxide on zirconia nanoparticles in a fluidized bed reactor using ferrocene and oxygen
-
J. R. Scheffe, A. Francés, D. M. King, X. Liang, B. A. Branch, A. S. Cavanagh, S. M. George, and A. W. Weimer, Atomic layer deposition of iron(III) oxide on zirconia nanoparticles in a fluidized bed reactor using ferrocene and oxygen, Thin Solid Films, 517, 1874-1879 (2009).
-
(2009)
Thin Solid Films
, vol.517
, pp. 1874-1879
-
-
Scheffe, J.R.1
Francés, A.2
King, D.M.3
Liang, X.4
Branch, B.A.5
Cavanagh, A.S.6
George, S.M.7
Weimer, A.W.8
-
141
-
-
54949138825
-
Atomic layer deposition of iron oxide thin films and nanotubes using ferrocene and oxygen as precursors
-
M. Rooth, A. Johansson, K. Kukli, J. Aarik, M. Boman, and A. Harsta, Atomic layer deposition of iron oxide thin films and nanotubes using ferrocene and oxygen as precursors, Chem. Vapor Deposit., 14, 67-70 (2008).
-
(2008)
Chem. Vapor Deposit.
, vol.14
, pp. 67-70
-
-
Rooth, M.1
Johansson, A.2
Kukli, K.3
Aarik, J.4
Boman, M.5
Harsta, A.6
-
142
-
-
0036685347
-
A Raman study of the lithium insertion process in vanadium pentoxide thin films deposited by atomic layer deposition
-
R. Baddour-Hadjean, V. Golabkan, J. P. Pereira-Ramos, A. Mantoux, and D. Lincot, A Raman study of the lithium insertion process in vanadium pentoxide thin films deposited by atomic layer deposition, J. Raman Spectrosc., 33, 631-638 (2002).
-
(2002)
J. Raman Spectrosc.
, vol.33
, pp. 631-638
-
-
Baddour-Hadjean, R.1
Golabkan, V.2
Pereira-Ramos, J.P.3
Mantoux, A.4
Lincot, D.5
-
143
-
-
0035669517
-
Surface-controlled deposition of Sc2O3 Thin Films by Atomic Layer Epitaxy Using. ?-diketonate and organometallic precursors
-
M. Putkonen, M. Nieminen, J. Niinisto, L. Niinisto, and T. Sajavaara, Surface-controlled deposition of Sc2O3 Thin Films by Atomic Layer Epitaxy Using ?-diketonate and organometallic precursors, Chem. Mater., 13, 4701-4707 (2001).
-
(2001)
Chem. Mater.
, vol.13
, pp. 4701-4707
-
-
Putkonen, M.1
Nieminen, M.2
Niinisto, J.3
Niinisto, L.4
Sajavaara, T.5
-
144
-
-
33645714162
-
ALD of scandium oxide from scandium tris(N, Ndiisopropylacetamidinate) and water
-
P. de Rouffignac, A. P. Yousef, K. H. Kim, and R. G. Gordon, ALD of scandium oxide from scandium tris(N, Ndiisopropylacetamidinate) and water, Electrochem. Solid-State Lett., 9(6), F45-F48 (2006).
-
(2006)
Electrochem. Solid-State Lett.
, vol.9
, Issue.6
-
-
De Rouffignac, P.1
Yousef, A.P.2
Kim, K.H.3
Gordon, R.G.4
-
145
-
-
3242672381
-
Processing of Y2O3 Thin films by atomic layer deposition from cyclopentadienyltype
-
J. Niinisto, M. Putkonen, and L. Niinisto, Processing of Y2O3 Thin films by atomic layer deposition from cyclopentadienyltype, Chem. Mater., 16, 2953-2958 (2004).
-
(2004)
Chem. Mater.
, vol.16
, pp. 2953-2958
-
-
Niinisto, J.1
Putkonen, M.2
Niinisto, L.3
-
146
-
-
0002885089
-
Low-temperature ALE deposition of Y2O3 thin films from. ?-diketonate precursors
-
M. Putkonen, T. Sajavaara, L.-S. Johansson, and L. Niinistö, Low-temperature ALE deposition of Y2O3 thin films from ?-diketonate precursors, Chem. Vapor Deposit., 7(1), 44-50 (2001).
-
(2001)
Chem. Vapor Deposit.
, vol.7
, Issue.1
, pp. 44-50
-
-
Putkonen, M.1
Sajavaara, T.2
Johansson, L.-S.3
Niinistö, L.4
-
147
-
-
10044287119
-
A comparative study on lanthanide oxide thin films grown by atomic layer deposition
-
J. Paivasaari, M. Putkonen, and L. Niinisto, A comparative study on lanthanide oxide thin films grown by atomic layer deposition, Thin Solid Films, 472, 275-281 (2005).
-
(2005)
Thin Solid Films
, vol.472
, pp. 275-281
-
-
Paivasaari, J.1
Putkonen, M.2
Niinisto, L.3
-
148
-
-
0038333133
-
Rare-earth oxide thin films as gate oxides in MOSFET transistors
-
M. Leskela and M. Ritala, Rare-earth oxide thin films as gate oxides in MOSFET transistors, J. Solid State Chem., 171, 170-174 (2003).
-
(2003)
J. Solid State Chem.
, vol.171
, pp. 170-174
-
-
Leskela, M.1
Ritala, M.2
-
149
-
-
0030405306
-
Ale growth of transparent conductors
-
M. Ritala, T. Asikainen, M. Leskela, and J. Skarp, Ale Growth of Transparent Conductors, MRS Proceedings, 426, 513-518 (1996).
-
(1996)
MRS Proceedings
, vol.426
, pp. 513-518
-
-
Ritala, M.1
Asikainen, T.2
Leskela, M.3
Skarp, J.4
-
150
-
-
0031546852
-
Atomic layer deposition of ZnO transparent conducting oxides
-
A. Yamada, B. Sang, and M. Konagai, Atomic layer deposition of ZnO transparent conducting oxides, Appl. Surf. Sci., 112, 216-222 (1997).
-
(1997)
Appl. Surf. Sci.
, vol.112
, pp. 216-222
-
-
Yamada, A.1
Sang, B.2
Konagai, M.3
-
151
-
-
71649114278
-
ZnO layers grown by atomic layer deposition: A new material for transparent conductive oxide
-
M. Godlewski, E. Guziewicz, G. ?uka, T. Krajewski, M. ?ukasiewicz, ?. Wachnicki, A. Wachnicka, K. Kopalko, A. Sarem, and B. Dalati, ZnO layers grown by atomic layer deposition: a new material for transparent conductive oxide, Thin Solid Films, 518, 1145-1148 (2009).
-
(2009)
Thin Solid Films
, vol.518
, pp. 1145-1148
-
-
Godlewski, M.1
Guziewicz, E.2
Uka, G.3
Krajewski, T.4
Ukasiewicz, M.5
Wachnicki, Ł.6
Wachnicka, A.7
Kopalko, K.8
Sarem, A.9
Dalati, B.10
-
152
-
-
80054800110
-
Transparent conductive ZnO:Al films grown by atomic layer deposition for Si-wire-based solar cells
-
B.-Y. Oh, J.-H. Kim, J.-W. Han, D.-S. Seo, H. S. Jang, H.-J. Choi, S.-H. Baek, J. H. Kim, G.-S. Heo, and T.-W. Kim, Transparent conductive ZnO:Al films grown by atomic layer deposition for Si-wire-based solar cells, Curr. Appl. Phys., 12, 273-279 (2012).
-
(2012)
Curr. Appl. Phys.
, vol.12
, pp. 273-279
-
-
Oh, B.-Y.1
Kim, J.-H.2
Han, J.-W.3
Seo, D.-S.4
Jang, H.S.5
Choi, H.-J.6
Baek, S.-H.7
Kim, J.H.8
Heo, G.-S.9
Kim, T.-W.10
-
153
-
-
80052406896
-
Metal oxide applications in organic-based photovoltaics
-
T. Gershon, Metal oxide applications in organic-based photovoltaics, Mater. Sci. Technol., 27(9), 1357-1371 (2011).
-
(2011)
Mater. Sci. Technol.
, vol.27
, Issue.9
, pp. 1357-1371
-
-
Gershon, T.1
-
154
-
-
77953140100
-
Aluminum doped zinc oxide films grown by atomic layer deposition for organic photovoltaic devices
-
H. Saarenpaa, T. Niemi, A. Tukiainen, H. Lemmetyinen, and N. Tkachenko, Aluminum doped zinc oxide films grown by atomic layer deposition for organic photovoltaic devices, Sol. Ener. Mater. Solar Cells, 94, 1379-1383 (2010).
-
(2010)
Sol. Ener. Mater. Solar Cells
, vol.94
, pp. 1379-1383
-
-
Saarenpaa, H.1
Niemi, T.2
Tukiainen, A.3
Lemmetyinen, H.4
Tkachenko, N.5
-
155
-
-
77957971105
-
Transparent conducting oxides for electrode applications in light emitting and absorbing devices
-
H. Liu, V. Avrutin, N. Izyumskaya, ÜÖzgür, and H. Morkoc, Transparent conducting oxides for electrode applications in light emitting and absorbing devices, Superlatt. Microstruct., 48, 458-484 (2010).
-
(2010)
Superlatt. Microstruct.
, vol.48
, pp. 458-484
-
-
Liu, H.1
Avrutin, V.2
Izyumskaya, N.3
Özgür, U.4
Morkoc, H.5
-
157
-
-
77956897740
-
The utilization of saturated gassolid reactions in the preparation of heterogeneous catalysts
-
S. Haukka, A. Kytskivi, E.-L. Lakomaa, U. Lehtovirta, M. Lindblad, V. Lujala, and T. Suntola, The utilization of saturated gassolid reactions in the preparation of heterogeneous catalysts, Stud. Surf. Sci. Catal., 91, 957-966 (1995).
-
(1995)
Stud. Surf. Sci. Catal.
, vol.91
, pp. 957-966
-
-
Haukka, S.1
Kytskivi, A.2
Lakomaa, E.-L.3
Lehtovirta, U.4
Lindblad, M.5
Lujala, V.6
Suntola, T.7
-
158
-
-
0000913015
-
Surface characteristics and activity of chromia/ alumina catalysts prepared by atomic layer epitaxy
-
A. Kytokivi, J.-P. Jacobs, A. Hakuli, J. Merilainen, and H. H. Brongersma, Surface characteristics and activity of chromia/ alumina catalysts prepared by atomic layer epitaxy, J. Catal., 163, 190-197 (1996).
-
(1996)
J. Catal.
, vol.163
, pp. 190-197
-
-
Kytokivi, A.1
Jacobs, J.-P.2
Hakuli, A.3
Merilainen, J.4
Brongersma, H.H.5
-
159
-
-
0030086051
-
Deposition of tin oxide into porous silicon by atomic layer epitaxy
-
C. Ducsö, N. Q. Khanh, Z. Horváth, I. Bársony, M. Utriainen, S. Lehto, M. Nieminen, and L. Niinistö, Deposition of tin oxide into porous silicon by atomic layer epitaxy, J. Electrochem. Soc., 143(2), 683-687 (1996).
-
(1996)
J. Electrochem. Soc.
, vol.143
, Issue.2
, pp. 683-687
-
-
Ducsö, C.1
Khanh, N.Q.2
Horváth, Z.3
Bársony, I.4
Utriainen, M.5
Lehto, S.6
Nieminen, M.7
Niinistö, L.8
-
160
-
-
0031125095
-
Porous silicon host matrix for deposition by atomic layer epitaxy
-
M. Utriainen, S. Lehto, L. Niinisto, Cs. Ducso, N. Q. Khanh, Z. E. Horvath, I. Barsony, and B. Pecz, Porous silicon host matrix for deposition by atomic layer epitaxy, Thin Solid Films, 297, 39-42 (1997).
-
(1997)
Thin Solid Films
, vol.297
, pp. 39-42
-
-
Utriainen, M.1
Lehto, S.2
Niinisto, L.3
Ducso, C.4
Khanh, N.Q.5
Horvath, Z.E.6
Barsony, I.7
Pecz, B.8
-
161
-
-
38049150344
-
Improvement in corrosion resistance of CrN coated stainless steel by conformal TiO2 deposition
-
C. X. Shan, X. Hou, K.-L. Choy, and P. Choquet, Improvement in corrosion resistance of CrN coated stainless steel by conformal TiO2 deposition, Surf. Coat. Technol., 202, 2147-2151 (2008).
-
(2008)
Surf. Coat. Technol.
, vol.202
, pp. 2147-2151
-
-
Shan, C.X.1
Hou, X.2
Choy, K.-L.3
Choquet, P.4
-
162
-
-
0345448389
-
Synthesis and characterization of volatile, thermally stable, reactive transition metal amidinates
-
B. S. Lim, A. Rahtu, J.-S. Park, and R. G. Gordon, Synthesis and characterization of volatile, thermally stable, reactive transition metal amidinates, Inorg. Chem., 42, 7951-7958 (2003).
-
(2003)
Inorg. Chem.
, vol.42
, pp. 7951-7958
-
-
Lim, B.S.1
Rahtu, A.2
Park, J.-S.3
Gordon, R.G.4
-
163
-
-
77955661999
-
Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition
-
C.-S. Lee, J. Kim, G. H. Gu, D.-H. Jo, C. G. Park, W. Choi, and H. Kim, Photocatalytic activities of TiO2 thin films prepared on Galvanized Iron substrate by plasma-enhanced atomic layer deposition, Thin Solid Films, 518, 4757-4761 (2010).
-
(2010)
Thin Solid Films
, vol.518
, pp. 4757-4761
-
-
Lee, C.-S.1
Kim, J.2
Gu, G.H.3
Jo, D.-H.4
Park, C.G.5
Choi, W.6
Kim, H.7
-
164
-
-
0036200927
-
Growth of aluminum nitride on porous alumina and silica through separate saturated gas-solid reactions of trimethylaluminum and ammonia
-
R. L. Puurunen, A. Root, P. Sarv, M. M. Viitanen, H. H. Brongersma, M. Lindblad, and A. O. I. Krause, Growth of aluminum nitride on porous alumina and silica through separate saturated gas-solid reactions of trimethylaluminum and ammonia, Chem. Mater., 14(2), 720-729 (2002).
-
(2002)
Chem. Mater.
, vol.14
, Issue.2
, pp. 720-729
-
-
Puurunen, R.L.1
Root, A.2
Sarv, P.3
Viitanen, M.M.4
Brongersma, H.H.5
Lindblad, M.6
Krause, A.O.I.7
-
165
-
-
34547676078
-
Modified atomic layer deposition of RuO2 thin films for capacitor electrodes
-
J.-H. Kim, D.-S. Kil, S.-J. Yeom, J.-S. Roh, N.-J. Kwak, and J.- W. Kim, Modified atomic layer deposition of RuO2 thin films for capacitor electrodes, Appl. Phys. Lett., 91, 052908/1-052908/3 (2007).
-
(2007)
Appl. Phys. Lett.
, vol.91
, pp. 0529081-0529083
-
-
Kim, J.-H.1
Kil, D.-S.2
Yeom, S.-J.3
Roh, J.-S.4
Kwak, N.-J.5
Kim, J.-W.6
-
166
-
-
69249164104
-
Atomic layer deposition of ruthenium and ruthenium-oxide thin films by using a Ru(EtCp)2 precursor and oxygen gas
-
W.-H. Kim, S.-J. Park, D. Y. Kim, and H. Kim, Atomic layer deposition of ruthenium and ruthenium-oxide thin films by using a Ru(EtCp)2 precursor and oxygen gas, J. Kor. Phys. Soc., 55(1), 32-37 (2009).
-
(2009)
J. Kor. Phys. Soc.
, vol.55
, Issue.1
, pp. 32-37
-
-
Kim, W.-H.1
Park, S.-J.2
Kim, D.Y.3
Kim, H.4
-
167
-
-
65949104055
-
Comparison of thermal and plasma-enhanced ALD/CVD of vanadium pentoxide
-
J. Musschoot, D. Deduytsche, H. Poelman, J. Haemers, R. L. Van Meirhaeghe, S. Van den Berghe, and C. Detavernier, Comparison of thermal and plasma-enhanced ALD/CVD of vanadium pentoxide, J. Electrochem. Soc., 156(7), P122-P126 (2009).
-
(2009)
J. Electrochem. Soc.
, vol.156
, Issue.7
-
-
Musschoot, J.1
Deduytsche, D.2
Poelman, H.3
Haemers, J.4
Van Meirhaeghe, R.L.5
Berghe Den S.Van6
Detavernier, C.7
-
168
-
-
11444266247
-
Template-assisted fabrication of dense, aligned arrays of titania nanotubes with well-controlled dimensions on substrates
-
M. S. Sander, M. J. Cote, W. Gu, B. M. Kile, and C. P. Tripp, Template-assisted fabrication of dense, aligned arrays of titania nanotubes with well-controlled dimensions on substrates, Adv. Mater., 16(22), 2052-2057 (2004).
-
(2004)
Adv. Mater.
, vol.16
, Issue.22
, pp. 2052-2057
-
-
Sander, M.S.1
Cote, M.J.2
Gu, W.3
Kile, B.M.4
Tripp, C.P.5
-
169
-
-
0000279453
-
Membrane-based synthesis of nanomaterials
-
C. R. Martin, Membrane-based synthesis of nanomaterials, Chem. Mater., 8, 1739-1746 (1996).
-
(1996)
Chem. Mater.
, vol.8
, pp. 1739-1746
-
-
Martin, C.R.1
-
170
-
-
39849104071
-
Template-directed synthesis of oxide nanotubes: Fabrication, characterization and applications
-
C. Bae, H. Yoo, S. Kim, K. Lee, J. Kim, M. M. Sung, and H. Shin, Template-directed synthesis of oxide nanotubes: fabrication, characterization, and applications, Chem. Mater., 20, 756-767 (2008).
-
(2008)
Chem. Mater.
, vol.20
, pp. 756-767
-
-
Bae, C.1
Yoo, H.2
Kim, S.3
Lee, K.4
Kim, J.5
Sung, M.M.6
Shin, H.7
-
171
-
-
4043099659
-
Formation of TiO2 and ZrO2 nanotubes using atomic layer deposition with ultraprecise control of the wall thickness
-
H. Shin, D.-K. Jeong, J. Lee, M. M. Sung, and J. Kim, Formation of TiO2 and ZrO2 nanotubes using atomic layer deposition with ultraprecise control of the wall thickness, Adv. Mater., 16(5), 1197-1200 (2004).
-
(2004)
Adv. Mater.
, vol.16
, Issue.5
, pp. 1197-1200
-
-
Shin, H.1
Jeong, D.-K.2
Lee, J.3
Sung, M.M.4
Kim, J.5
-
172
-
-
1842587991
-
Inorganic nanocomposites of n- and p-type semiconductors: A new type of threedimensional solar cell
-
M. Nanu, J. Schoonman, and A. Goossens, Inorganic nanocomposites of n- and p-type semiconductors: a new type of threedimensional solar cell, Adv. Mater., 16(5), 453-456 (2004).
-
(2004)
Adv. Mater.
, vol.16
, Issue.5
, pp. 453-456
-
-
Nanu, M.1
Schoonman, J.2
Goossens, A.3
-
173
-
-
1242298519
-
Growth of calcium carbonate by the atomic layer chemical vapour deposition technique
-
O. Nelson, H. Fjellvag, and A. Kjekshus, Growth of calcium carbonate by the atomic layer chemical vapour deposition technique, Thin Solid Films, 450, 240-247 (2004).
-
(2004)
Thin Solid Films
, vol.450
, pp. 240-247
-
-
Nelson, O.1
Fjellvag, H.2
Kjekshus, A.3
-
174
-
-
0037995321
-
Effect of annealing in processing of strontium titanate thin films by ALD
-
A. Kosala, M. Putkonen, L. S. Johansson, and L. Niinisto, Effect of annealing in processing of strontium titanate thin films by ALD, Appl. Surf. Sci., 211, 102-112 (2003).
-
(2003)
Appl. Surf. Sci.
, vol.211
, pp. 102-112
-
-
Kosala, A.1
Putkonen, M.2
Johansson, L.S.3
Niinisto, L.4
-
175
-
-
0015127532
-
Memristor-The missing circuit element
-
L. O. Chua, Memristor-the missing circuit element, IEEE Trans. Circuit Theory, CT-18(5), 507-519 (1971).
-
(1971)
IEEE Trans. Circuit Theory
, vol.CT-18
, Issue.5
, pp. 507-519
-
-
Chua, L.O.1
-
176
-
-
70349684961
-
Circuit elements with memory: Memristors, memcapacitors and meminductors
-
M. Di Ventra, Y. V. Pershin, and L. O. Chua, Circuit elements with memory: memristors, memcapacitors, and meminductors, Proc. IEEE, 97(10), 1717-1724 (2009).
-
(2009)
Proc. IEEE
, vol.97
, Issue.10
, pp. 1717-1724
-
-
Di Ventra, M.1
Pershin, Y.V.2
Chua, L.O.3
-
177
-
-
43049126833
-
The missing memristor found
-
D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, The missing memristor found, Nature, 453, 80-83 (2008).
-
(2008)
Nature
, vol.453
, pp. 80-83
-
-
Strukov, D.B.1
Snider, G.S.2
Stewart, D.R.3
Williams, R.S.4
-
178
-
-
46749093701
-
Memristive switching mechanism for metal/oxide/metal nanodevices
-
J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, Memristive switching mechanism for metal/oxide/metal nanodevices, Nature Nanotechnol., 3, 429-433 (2008).
-
(2008)
Nature Nanotechnol.
, vol.3
, pp. 429-433
-
-
Yang, J.J.1
Pickett, M.D.2
Li, X.3
Ohlberg, D.A.A.4
Stewart, D.R.5
Williams, R.S.6
-
179
-
-
70350378210
-
Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films
-
H. Y. Jeong, J. Y. Lee, S.-Y. Choi, and J. W. Kim, Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films, Appl. Phys. Lett., 95, 162108/1-162108/3 (2009).
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 1621081-1621083
-
-
Jeong, H.Y.1
Lee, J.Y.2
Choi, S.-Y.3
Kim, J.W.4
-
180
-
-
33745767057
-
Study on the resistive switching time of TiO2 thin films
-
B. J. Choi, S. Choi, K. M. Kim, Y. C. Shin, C. S. Hwang, S. Y. Hwang, S. Cho, S. Park, and S.-K. Hong, Study on the resistive switching time of TiO2 thin films, Appl. Phys. Lett., 89, 012906/1-012906/3 (2006).
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 0129061-0129063
-
-
Choi, B.J.1
Choi, S.2
Kim, K.M.3
Shin, Y.C.4
Hwang, C.S.5
Hwang, S.Y.6
Cho, S.7
Park, S.8
Hong, S.-K.9
-
181
-
-
63349111176
-
On SPICE macromodelling of TiO2 memristors
-
S. Benderli and T. A. Wey, On SPICE macromodelling of TiO2 memristors, Electron. Lett., 45(7), 377-378 (2009).
-
(2009)
Electron. Lett.
, vol.45
, Issue.7
, pp. 377-378
-
-
Benderli, S.1
Wey, T.A.2
-
182
-
-
0001331485
-
Reproducible switching effect in thin oxide films for memory applications
-
A. Beck, J. G. Bednorz, Ch. Gerber, C. Rossel, and D. Widmer, Reproducible switching effect in thin oxide films for memory applications, Appl. Phys. Lett., 77(1), 139-141 (2000).
-
(2000)
Appl. Phys. Lett.
, vol.77
, Issue.1
, pp. 139-141
-
-
Beck, A.1
Bednorz, J.G.2
Gerber, Ch.3
Rossel, C.4
Widmer, D.5
-
183
-
-
68249109103
-
Phase-transition driven memristive system
-
T. Driscoll, H.-T. Kim, B.-G. Chae, M. Di Ventra, and D. N. Basov, Phase-transition driven memristive system, Appl. Phys. Lett., 95, 043503/1-043503/3 (2009).
-
(2009)
Appl. Phys. Lett.
, vol.95
, pp. 0435031-0435033
-
-
Driscoll, T.1
Kim, H.-T.2
Chae, B.-G.3
Di Ventra, M.4
Basov, D.N.5
-
184
-
-
70349313595
-
Memory metamaterials
-
T. Driscoll, H.-T. Kim, B.-G. Chae, B.-J. Kim, Y.-W. Lee, N. M. Jokerst, S. Palit, D. R. Smith, M. Di Ventra, and D. N. Basov, Memory metamaterials, Science, 325, 1518-1521 (2009).
-
(2009)
Science
, vol.325
, pp. 1518-1521
-
-
Driscoll, T.1
Kim, H.-T.2
Chae, B.-G.3
Kim, B.-J.4
Lee, Y.-W.5
Jokerst, N.M.6
Palit, S.7
Smith, D.R.8
Di Ventra, M.9
Basov, D.N.10
-
185
-
-
77956380614
-
Memristive adaptive filters
-
T. Driscoll, J. Quinn, S. Klein, H. T. Kim, B. J. Kim, Yu. V. Pershin, M. Di Ventra, and D. N. Basov, Memristive adaptive filters, Appl. Phys. Lett., 97, 093502/1-093502/3 (2010).
-
(2010)
Appl. Phys. Lett.
, vol.97
, pp. 0935021-0935023
-
-
Driscoll, T.1
Quinn, J.2
Klein, S.3
Kim, H.T.4
Kim, B.J.5
Pershin, Yu.V.6
Di Ventra, M.7
Basov, D.N.8
-
186
-
-
79959343594
-
Engineering oxide resistive switching materials for memristive device application
-
L. Liu, B. Chen, B. Gao, F. Zhang, Y. Chen, X. Liu, Y. Wang, R. Han, and J. Kang, Engineering oxide resistive switching materials for memristive device application, Appl. Phys. A, 102, 991-996 (2011).
-
(2011)
Appl. Phys. A
, vol.102
, pp. 991-996
-
-
Liu, L.1
Chen, B.2
Gao, B.3
Zhang, F.4
Chen, Y.5
Liu, X.6
Wang, Y.7
Han, R.8
Kang, J.9
-
187
-
-
84858167699
-
Selfassembly- induced formation of high-density silicon oxide memristor nanostructures on graphene and metal electrodes
-
dx. doi. org/10. 1021/nl203597d
-
W. I. Park, J. M. Yoon, M. Park, J. Lee, S. K. Kim, J. W. Jeong, K. Kim, HuY. Jeong, S. Jeon, K. S. No, J. Y. Lee, andY. S. Jung, Selfassembly- induced formation of high-density silicon oxide memristor nanostructures on graphene and metal electrodes, Nano Lett., dx. doi. org/10. 1021/nl203597d (2012)
-
(2012)
Nano Lett
-
-
Park, W.I.1
Yoon, J.M.2
Park, M.3
Lee, J.4
Kim, S.K.5
Jeong, J.W.6
Kim, K.7
Jeong, H.Y.8
Jeon, S.9
No, K.S.10
Lee, J.Y.11
Jung, Y.S.12
-
188
-
-
66849119072
-
Nanoparticle assemblies as memristors
-
T. H. Kim, E. Y. Jang, N. J. Lee, D. J. Choi, K.-J. Lee, J.-tak Jang, J-sil Choi, S. H. Moon, and J. Cheon, Nanoparticle assemblies as memristors, Nano Lett., 9(6), 2229-2233 (2009).
-
(2009)
Nano Lett.
, vol.9
, Issue.6
, pp. 2229-2233
-
-
Kim, T.H.1
Jang, E.Y.2
Lee, N.J.3
Choi, D.J.4
Lee, K.-J.5
Jang J.-tak6
Choi, J.7
Moon, S.H.8
Cheon, J.9
-
189
-
-
79960566903
-
Spectromicroscopy of tantalum oxide memristors
-
J. P. Strachan, G. Medeiros-Ribeiro, J. J. Yang, M.-X. Zhang, F. Miao, I. Goldfarb, M. Holt, V. Rose, and R. S. Williams, Spectromicroscopy of tantalum oxide memristors, Appl. Phys. Lett., 98, 242114/1-242114/3 (2011).
-
(2011)
Appl. Phys. Lett.
, vol.98
, pp. 2421141-2421143
-
-
Strachan, J.P.1
Medeiros-Ribeiro, G.2
Yang, J.J.3
Zhang, M.-X.4
Miao, F.5
Goldfarb, I.6
Holt, M.7
Rose, V.8
Williams, R.S.9
-
190
-
-
34247561316
-
Effect of top electrode material on resistive switching properties of ZrO2 film memory devices
-
C.-Y. Lin, C.-Y. Wu, C.-Y. Wu, T.-C. Lee, F.-L. Yang, C. Hu, and T.-Y. Tseng, Effect of top electrode material on resistive switching properties of ZrO2 film memory devices, IEEE Electron Dev. Lett., 28(5), 366-368 (2007).
-
(2007)
IEEE Electron Dev. Lett.
, vol.28
, Issue.5
, pp. 366-368
-
-
Lin, C.-Y.1
Wu, C.-Y.2
Wu, C.-Y.3
Lee, T.-C.4
Yang, F.-L.5
Hu, C.6
Tseng, T.-Y.7
-
191
-
-
50249152925
-
2-stack ID-IR crosspoint structure with oxide diodes as switch elements for high density resistance RAM applications
-
December 10-12.
-
M. J. Lee, Y. Park, B. S. Kang, S. E. Ahn, C. Lee, K. Kim, W. Xianyu, G. Stefanovich, J. H. Lee, S. J. Chung, Y. H. Kim, C. S. Lee, J. B. Park, I. G. Baek, and I. K. Yoo, 2-stack ID-IR crosspoint structure with oxide diodes as switch elements for high density resistance RAM applications, In Electron Devices Meeting, 2007. IEDM 2007. IEEE International December 10-12. 2007, pp. 771-774.
-
(2007)
Electron Devices Meeting 2007. IEDM 2007. IEEE International
, pp. 771-774
-
-
Lee, M.J.1
Park, Y.2
Kang, B.S.3
Ahn, S.E.4
Lee, C.5
Kim, K.6
Xianyu, W.7
Stefanovich, G.8
Lee, J.H.9
Chung, S.J.10
Kim, Y.H.11
Lee, C.S.12
Park, J.B.13
Baek, I.G.14
Yoo, I.K.15
-
192
-
-
76049115964
-
Switching mechanisms in microscale memristors
-
T. Prodromakis, K. Michelakis, and C. Toumazou, Switching mechanisms in microscale memristors, Electron. Lett., 46(1), 63-65 (2010).
-
(2010)
Electron. Lett.
, vol.46
, Issue.1
, pp. 63-65
-
-
Prodromakis, T.1
Michelakis, K.2
Toumazou, C.3
-
193
-
-
0000020095
-
Ultralarge capacitance-voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition
-
Y. Kim, K. H. Park, T. H. Chung, H. J. Bark, J.-Y. Yi, W. C. Choi, E. K. Kim, J. W. Lee, and J. Y. Lee, Ultralarge capacitance-voltage hysteresis and charge retention characteristics in metal oxide semiconductor structure containing nanocrystals deposited by ion-beam-assisted electron beam deposition, Appl. Phys. Lett., 78(7), 934-936 (2001).
-
(2001)
Appl. Phys. Lett.
, vol.78
, Issue.7
, pp. 934-936
-
-
Kim, Y.1
Park, K.H.2
Chung, T.H.3
Bark, H.J.4
Yi, J.-Y.5
Choi, W.C.6
Kim, E.K.7
Lee, J.W.8
Lee, J.Y.9
-
194
-
-
80655132877
-
AndC. Martínez- Boubeta, Resistance switching in transparent magnetic MgO films
-
O. Jambois, P. Carreras, A. Antony, J. Bertomeu, andC. Martínez- Boubeta, Resistance switching in transparent magnetic MgO films, Solid State Commun., 151, 1856-1859 (2011).
-
(2011)
Solid State Commun.
, vol.151
, pp. 1856-1859
-
-
Jambois, O.1
Carreras, P.2
Antony, A.3
Bertomeu, J.4
-
195
-
-
78751561498
-
Dopant control by atomic layer deposition in oxide films for memristive switches
-
J. J. Yang, N. P. Kobayashi, J. P. Strachan, M.-X. Zhang, D. A. A. Ohlberg, M. D. Pickett, Z. Li, G. Medeiros-Ribeiro, and R. S. Williams, Dopant control by atomic layer deposition in oxide films for memristive switches, Chem. Mater., 23, 123-125 (2011).
-
(2011)
Chem. Mater.
, vol.23
, pp. 123-125
-
-
Yang, J.J.1
Kobayashi, N.P.2
Strachan, J.P.3
Zhang, M.-X.4
Ohlberg, D.A.A.5
Pickett, M.D.6
Li, Z.7
Medeiros-Ribeiro, G.8
Williams, R.S.9
-
196
-
-
79959336003
-
Polymeric ferroelectric and oxide semiconductor-based fully transparent memristor cell
-
S.-M. Yoon, S. Yang, S.-W. Jung, C.-W. Byun, M.-K. Ryu, W.-S. Cheong, B. H. Kim, H. C. Oh, S.-H. K. Park, C.-S. Hwang, S.-Y. Kang, H.-J. Ryu, and B.-G. Yu, Polymeric ferroelectric and oxide semiconductor-based fully transparent memristor cell, Appl. Phys. A, 102, 983-990 (2011).
-
(2011)
Appl. Phys. A
, vol.102
, pp. 983-990
-
-
Yoon, S.-M.1
Yang, S.2
Jung, S.-W.3
Byun, C.-W.4
Ryu, M.-K.5
Cheong, W.-S.6
Kim, B.H.7
Oh, H.C.8
Park, S.-H.K.9
Hwang, C.-S.10
Kang, S.-Y.11
Ryu, H.-J.12
Yu, B.-G.13
-
197
-
-
79956111265
-
Nanoscale resistive switches: Devices, fabrication and integration
-
Q. Xia, Nanoscale resistive switches: devices, fabrication and integration, Appl. Phys. A, 102, 955-965 (2011).
-
(2011)
Appl. Phys. A
, vol.102
, pp. 955-965
-
-
Xia, Q.1
-
198
-
-
33645889383
-
Switching properties of thin NiO films
-
J. F. Gibbons andW. E. Beadle, Switching properties of thin NiO films, Solid-State Electron., 7, 785-797 (1964).
-
(1964)
Solid-State Electron.
, vol.7
, pp. 785-797
-
-
Gibbons, J.F.1
Beadle, W.E.2
-
199
-
-
0040554711
-
Switching phenomena in titanium oxide thin films
-
F. Argall, Switching phenomena in titanium oxide thin films, Solid-State Electron., 11, 535-541 (1968).
-
(1968)
Solid-State Electron.
, vol.11
, pp. 535-541
-
-
Argall, F.1
-
200
-
-
0014808773
-
Electrode effects and bistable switching Nb2O5 diodes
-
T. W. Hickmott and W. R. Hiatt, Electrode effects and bistable switching Nb2O5 diodes, Solid-State Electron., 13, 1033-1047 (1970).
-
(1970)
Solid-State Electron.
, vol.13
, pp. 1033-1047
-
-
Hickmott, T.W.1
Hiatt, W.R.2
-
201
-
-
37549002104
-
Resistance switching behaviors of hafnium oxide films grown by MOCVD for nonvolatile memory applications
-
S. Lee, W.-G. Kim, S.-W. Rhee, and K. Yong, Resistance switching behaviors of hafnium oxide films grown by MOCVD for nonvolatile memory applications, J. Electrochem. Soc., 155(2), H92-H96 (2008).
-
(2008)
J. Electrochem. Soc.
, vol.155
, Issue.2
-
-
Lee, S.1
Kim, W.-G.2
Rhee, S.-W.3
Yong, K.4
-
202
-
-
55749099808
-
Reproducible resistive switching behavior in sputtered CeO2 polycrystalline films
-
C.-Y. Lin, D.-Y. Lee, S.-Y. Wang, C.-C. Lin, and T.-Y. Tseng, Reproducible resistive switching behavior in sputtered CeO2 polycrystalline films, Surf. Coat. Technol., 203, 480-483 (2008).
-
(2008)
Surf. Coat. Technol.
, vol.203
, pp. 480-483
-
-
Lin, C.-Y.1
Lee, D.-Y.2
Wang, S.-Y.3
Lin, C.-C.4
Tseng, T.-Y.5
|