Thermal stability of amorphous silicon/silicon nitride stacks for passivating crystalline silicon solar cells

Applied Physics Letters

Volumn 93, Issue 17, 2008, Pages

  Gatz, S ^c   Plagwitz, H ^a   Altermatt, P P ^a,b   Terheiden, B ^a   Brendel, R ^a,b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; NITRIDES; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON NITRIDE; SILICON SOLAR CELLS; SILICON WAFERS; SOLAR ENERGY; THERMODYNAMIC STABILITY;

CRYSTALLINE SILICON SOLAR CELLS; CRYSTALLINE SURFACES; DEPOSITION TEMPERATURES; DOUBLE LAYERS; MINIMUM SURFACES; SILICON NITRIDE CAPPING LAYERS; SURFACE PASSIVATIONS; THERMAL STABILITIES;

AMORPHOUS SILICON;

EID: 55149101376     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3009571     Document Type: Article

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