Front and rear silicon-nitride-passivated multicrystalline silicon solar cells with an efficiency of 18.1%

Progress in Photovoltaics: Research and Applications

Volumn 10, Issue 1, 2002, Pages 35-39

  Mittelstdt L ^a,c   Dauwe, S ^a   Metz, A ^a   Hezel, R ^a   Hssler C ^b  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b BAYER AG   (Germany)

^c ErSol Solar Energy AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; LOW TEMPERATURE EFFECTS; PASSIVATION; PHOTOLITHOGRAPHY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON NITRIDE;

LOCAL ALUMINUM BACK SURFACE FIELD; MULTICRYSTALLINE SILICON SOLAR CELLS; SURFACE PASSIVATION;

SILICON SOLAR CELLS;

EID: 0036167703     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/pip.423     Document Type: Article

References (10)

1. A 19.8% efficient honeycomb multicrystalline silicon solar cell with improved light trapping
2. Record high 18.6% efficient solar cell on HEM multicrystalline material
3. High efficiency, reduced rear contact area multicrystalline silicon solar cells
4. Record low surface recombination velocities on 1 Ωcm p-silicon using remote plasma silicon nitride passivation
5. Record efficiencies above 21% for MIS-contacted diffused junction silicon solar cells
6. 20% efficient bifacial silicon solar cells
7. Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells
8. Simplified PERC solar cells passivated with PECVD silicon nitride
9. Exceptionally high bulk minority-carrier lifetimes in block-cast multi-crystalline silicon
10. High-quality passivated rear contact structure for silicon solar cells based on simple mechanical abrasion