Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells

Progress in Photovoltaics: Research and Applications

Volumn 10, Issue 4, 2002, Pages 271-278

  Dauwe, Stefan ^a   Mittelstädt, Lutz ^a   Metz, Axel ^a   Hezel, Rudolf ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC POTENTIAL; FILM GROWTH; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); PASSIVATION; SILICON NITRIDE;

REAR SURFACE PASSIVATION;

SOLAR CELLS;

EID: 0036605313     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/pip.420     Document Type: Article

References (22)

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