24.5% efficiency silicon PERT cells on MCZ substrates and 24.7% efficiency PERL cells on FZ substrates

Progress in Photovoltaics: Research and Applications

Volumn 7, Issue 6, 1999, Pages 471-474

  Zhao, Jianhua ^a   Wang, Aihua ^a   Green, Martin A ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH FROM MELT; QUANTUM EFFICIENCY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

FLOATING ZONE (FZ) SUBSTRATES;

SOLAR CELLS;

EID: 0033364929     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-159X(199911/12)7:6<471::AID-PIP298>3.0.CO;2-7     Document Type: Article

References (9)

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3. 2 and η = 23.3%', Proc. 14th European Photovoltaic Solar Energy Conference, Barcelona, 1997, pp. 392-395.
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8. J. Knobloch, S. W. Glunz, D. Biro, W. Warta, E. Schaffer and W. Wettling, 'Solar cells with efficiencies above 21% processed from Czochralski grown silicon', Proc. 25th IEEE Photovoltaic Specialist Conference, 1996, pp. 405-408.
9. J. Schmidt, A. G. Aberle and R. Hezel, 'Investigation of carrier lifetime instabilities in CZ-grown silicon', Proc. 26th IEEE Photovoltaic Specialist Conference, 1997, pp. 13-18.