Extremely low surface recombination velocities on crystalline silicon wafers realized by catalytic chemical vapor deposited SiNx/a-Si stacked passivation layers

Applied Physics Letters

Volumn 97, Issue 8, 2010, Pages

  Koyama, Koichi ^a   Ohdaira, Keisuke ^a   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI FILMS; CATALYTIC CHEMICAL VAPOR DEPOSITION; CHEMICAL VAPOR DEPOSITED; CRYSTALLINE SI (C-SI); CRYSTALLINE SILICON WAFERS; HOT WIRE CVD; LOW LEVEL; P-TYPE WAFER; PASSIVATION LAYER; SI WAFER; STACKED LAYER; SURFACE RECOMBINATION VELOCITIES;

CARRIER LIFETIME; CHEMICAL VAPOR DEPOSITION; CRYSTALLINE MATERIALS; PASSIVATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON NITRIDE;

SILICON WAFERS;

EID: 77956202914     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3483853     Document Type: Article

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