Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge

Solar Energy Materials and Solar Cells

Volumn 90, Issue 18-19, 2006, Pages 3438-3443

  Agostinelli, G ^a   Delabie, A ^a   Vitanov, P ^b   Alexieva, Z ^b   Dekkers, H F W ^a   De Wolf, S ^a   Beaucarne, G ^a  

^a IMEC   (Belgium)

^b CL SENES   (Bulgaria)

Author keywords

Al2O3; Negative charges; Surface passivation

Indexed keywords

ALUMINUM COMPOUNDS; CHARGED PARTICLES; DIELECTRIC MATERIALS; PASSIVATION; SURFACE REACTIONS; VELOCITY CONTROL;

AL203; HIGH DENSITY; NEGATIVE CHARGES; SURFACE PASSIVATIONS;

SILICON WAFERS;

EID: 33748331191     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2006.04.014     Document Type: Article

References (5)

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4. G. Lucovsky, J.C. Phillips, M.F. Thorpe, in: Proceedings of the Characterisation and Metrology for ULSI Technology, 2000, pp. 154-158.
5. Vitanov P., Harizanova A., Ivanova T., and Ivanova K. J. Mater. Sci.: Mater. Electron. 14 (2003) 757