Excellent Si surface passivation by low temperature SiO2 using an ultrathin Al2O3 capping film

Physica Status Solidi - Rapid Research Letters

Volumn 5, Issue 1, 2011, Pages 22-24

  Dingemans, G ^a   Van De Sanden, M C M ^a   Kessels, W M M ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Aluminium oxide; Atomic layer deposition; Si; Silicon oxide; Solar cells; Surface passivation

Indexed keywords

ALUMINIUM OXIDE; ALUMINUM OXIDES; ATOMIC LAYER; ATOMIC LAYER DEPOSITED; CAPPING LAYER; CHEMICAL PASSIVATION; HIGH-TEMPERATURE FIRING; INTERFACE DEFECTS; LOW DEFECT DENSITIES; LOW TEMPERATURES; SI; SI SURFACES; SILICON SURFACES; SURFACE PASSIVATION; ULTRA-THIN;

ALUMINUM; ATOMIC LAYER DEPOSITION; ATOMS; DEFECT DENSITY; DEFECTS; SILICON; SILICON COMPOUNDS; SILICON OXIDES; SOLAR CELLS;

PASSIVATION;

EID: 78650969840     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201004378     Document Type: Article

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