The silane depletion fraction as an indicator for the amorphous/crystalline silicon interface passivation quality

Applied Physics Letters

Volumn 97, Issue 18, 2010, Pages

  Descoeudres, A ^a   Barraud, L ^a   Bartlome, R ^a   Choong, G ^a   De Wolf, Stefaan ^a   Zicarelli, F ^a   Ballif, C ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON LAYERS; APERTURE EFFICIENCY; CRYSTALLINE SILICON WAFERS; HETEROJUNCTION SOLAR CELLS; IN-SITU; INTERFACE PASSIVATION; PLASMA CONDITIONS; SILANE PLASMAS; SILICON HETEROJUNCTIONS; SILICON INTERFACE; VERY HIGH FREQUENCY;

HETEROJUNCTIONS; PASSIVATION; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SOLAR CELLS;

AMORPHOUS SILICON;

EID: 78649264201     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3511737     Document Type: Article

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