n-Type silicon - Enabling efficiencies > 20% in industrial production

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2010, Pages 50-56

  Glunz, S W ^a   Benick, J ^a   Biro, D ^a   Bivour, M ^a   Hermle, M ^a   Pysch, D ^a   Rauer M ^a   Reichel, C ^a   Richter, A ^a   Rudiger M ^a   Schmiga, C ^a   Suwito, D ^a   Wolf, A ^a   Preu, R ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-DOPED; BORON-OXYGEN DEFECTS; BULK LIFETIME; CRYSTALLINE SILICON SOLAR CELLS; CZOCHRALSKI; DIELECTRIC PASSIVATION; FRAUNHOFER; HIGH-EFFICIENCY CELLS; INDUSTRIAL PRODUCTION; LIGHT-INDUCED DEGRADATION; MAGNETIC CZ; METAL CONTAMINATION; METALLIZATIONS; N TYPE SILICON; OXYGEN CONCENTRATIONS; P-TYPE; P-TYPE SILICON;

BORON; GALLIUM; OXYGEN; PASSIVATION; PHOTOVOLTAIC EFFECTS; SOLAR CELLS;

SURFACE STRUCTURE;

EID: 78650087812     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5614203     Document Type: Conference Paper

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