Thermal stability of the Al2O3 passivation on p-type silicon surfaces for solar cell applications

Physica Status Solidi - Rapid Research Letters

Volumn 3, Issue 7-8, 2009, Pages 233-235

  Benick, Jan ^a   Richter, Armin ^a   Hermle, Martin ^a   Glunz, Stefan W ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-DOPED; CONTACT FORMATION; EMITTER SATURATION CURRENT DENSITY; FIRING PROCESS; FIRING STABILITY; FIRING TEMPERATURE; HIGH-TEMPERATURE FIRING; METALLIZATIONS; MODERATE TEMPERATURE; N TYPE SILICON; P-TYPE; P-TYPE SILICON; PRINTING TECHNOLOGIES; SOLAR-CELL APPLICATIONS; THERMAL STABILITY;

ALUMINUM; BORON; OPEN CIRCUIT VOLTAGE; SILICON SOLAR CELLS; SOLAR CELLS; THERMODYNAMIC STABILITY;

PASSIVATION;

EID: 71149088288     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200903209     Document Type: Article

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